Patents by Inventor Dennis M. Lazaroff
Dennis M. Lazaroff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230123792Abstract: The present disclosure is drawn to microfluidic devices. The microfluidic device includes a microfluidic well, a layered composite stack, and an optical sensor. The layered composite stack includes an optical filter composited with an etch-stopping layer. The optical filter defines the microfluidic well. The optical sensor is associated with the microfluidic well and has the optical filter positioned therebetween.Type: ApplicationFiled: March 31, 2020Publication date: April 20, 2023Applicant: Hewlett-Packard Development Company, L.P.Inventors: Alexander Govyadinov, Dennis M. LAZAROFF, Brett E. DAHLGREN, Stefan Enr LUCCHINI, Tod WOODFORD
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Patent number: 8776337Abstract: The present disclosure includes methods of forming capacitive sensors. One method includes forming a first electrode array of the capacitive sensor on a first structure. Forming the first electrode array can include: forming a dielectric material on a substrate material; forming an electrode material on the dielectric material; removing portions of the electrode material to form a number of electrodes separated from each other; and removing at least a portion of the dielectric material from between the number of electrodes. The method can include bonding the first structure to a second structure having a second electrode array of the capacitive sensor formed thereon such that the number of electrodes of the first electrode array face a number of electrodes of the second electrode array.Type: GrantFiled: July 30, 2010Date of Patent: July 15, 2014Assignee: Hewlett-Packard Development Company, L.P.Inventors: Brian D. Homeijer, Robert G. Walmsley, Rodney L. Alley, Dennis M. Lazaroff, Sara J. Homeijer
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Publication number: 20130019678Abstract: A micro electromechanical systems (MEMS) device includes a proof mass and a frame. The proof mass is to movably travel within the frame.Type: ApplicationFiled: July 22, 2011Publication date: January 24, 2013Inventors: Dennis M. Lazaroff, Rodney L. Alley, Brian D. Horneijer, John L. Williams, Donald J. Milligan
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Publication number: 20120025851Abstract: The present disclosure includes capacitive sensors and methods of forming capacitive sensors. One capacitive sensor includes a first substrate structure having a first dielectric material formed thereon and electrodes of a first electrode array formed on the first dielectric material. The sensor includes a second substrate structure facing the first substrate structure and having a second dielectric material formed thereon and electrodes of a second electrode array formed on the second dielectric material. The sensor includes a removed portion of the first dielectric material forming a recess between adjacent electrodes of the first electrode array, and the first substrate structure is moveable with respect to the second substrate structure.Type: ApplicationFiled: July 30, 2010Publication date: February 2, 2012Inventors: Brian D. Homeijer, Robert G. Walmsley, Rodney L. Alley, Dennis M. Lazaroff, Sara J. Homeijer
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Patent number: 7310175Abstract: A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including, filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer.Type: GrantFiled: December 21, 2004Date of Patent: December 18, 2007Assignee: Hewlett-Packard Development Company, L.P.Inventors: Michael G. Monroe, Eric L. Nikkel, Dennis M. Lazaroff
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Patent number: 7071121Abstract: A ceramic film is useful as ion-conducting ceramics, electrodes, hard ceramic coatings, transparent conducting oxides, transparent semiconducting oxides, ferroelectric oxides, and dielectric oxides. The ceramic film may be produced from a liquid precursor solution.Type: GrantFiled: October 28, 2003Date of Patent: July 4, 2006Assignee: Hewlett-Packard Development Company, L.P.Inventors: David Punsalan, Dennis M. Lazaroff, Christopher C. Beatty
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Patent number: 6940085Abstract: A memory structure that includes a first electrode, a second electrode, a third electrode, a control element disposed between the first electrode and the second electrode, and a memory storage element disposed between the second electrode and the third electrode. At least one of the control element and memory storage element is protected from contamination by at least one of the first electrode, second electrode and third electrode.Type: GrantFiled: April 2, 2002Date of Patent: September 6, 2005Assignee: Hewlett-Packard Development Company, I.P.Inventors: Peter Fricke, Andrew Koll, Dennis M. Lazaroff, Andrew L. Van Brocklin
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Patent number: 6861277Abstract: A method of forming a MEMS device includes depositing a conductive material on a substructure, forming a first sacrificial layer over the conductive material, including forming a substantially planar surface of the first sacrificial layer, and forming a first element over the substantially planar surface of the first sacrificial layer, including communicating the first element with the conductive material through the first sacrificial layer. In addition, the method includes forming a second sacrificial layer over the first element, including forming a substantially planar surface of the second sacrificial layer, forming a support through the second sacrificial layer to the first element after forming the second sacrificial layer, including filling the support, and forming a second element over the support and the substantially planar surface of the second sacrificial layer.Type: GrantFiled: October 2, 2003Date of Patent: March 1, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Michael G. Monroe, Eric L. Nikkel, Dennis M. Lazaroff
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Patent number: 6746892Abstract: A low heat loss and small contact area electrode structure for a phase change media memory device is disclosed. The memory device includes a composite electrode that includes a dielectric mandrel that is connected with a substrate and having a tapered shape that terminates at a vertex. An electrically conductive material conformally covers the dielectric mandrel and terminates at a tip. A first dielectric layer covers all of the composite electrode except an exposed portion of the composite electrode that is adjacent to the tip. A phase change media is in contact with the exposed portion. The exposed portion is only a small percentage of an overall surface area of the composite electrode so that a contact footprint between the exposed portion and the phase change media is small relative to a surface area of the phase change media and Joule heat transfer from the phase change media into the composite electrode is reduced.Type: GrantFiled: August 8, 2003Date of Patent: June 8, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Heon Lee, Dennis M. Lazaroff
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Publication number: 20040077123Abstract: A low heat loss and small contact area electrode structure for a phase change media memory device is disclosed. The memory device includes a composite electrode that includes a dielectric mandrel that is connected with a substrate and having a tapered shape that terminates at a vertex. An electrically conductive material conformally covers the dielectric mandrel and terminates at a tip. A first dielectric layer covers all of the composite electrode except an exposed portion of the composite electrode that is adjacent to the tip. A phase change media is in contact with the exposed portion. The exposed portion is only a small percentage of an overall surface area of the composite electrode so that a contact footprint between the exposed portion and the phase change media is small relative to a surface area of the phase change media and Joule heat transfer from the phase change media into the composite electrode is reduced.Type: ApplicationFiled: August 8, 2003Publication date: April 22, 2004Inventors: Heon Lee, Dennis M. Lazaroff
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Patent number: 6670628Abstract: A low heat loss and small contact area electrode structure for a phase change media memory device is described. The memory device includes a composite electrode that includes a dielectric mandrel that is connected with a substrate and having a tapered shape that terminates at a vertex. An electrically conductive material conformally covers the dielectric mandrel and terminates at a tip. A first dielectric layer covers all of the composite electrode except an exposed portion of the composite electrode that is adjacent to the tip. A phase change media is in contact with the exposed portion. The exposed portion is only a small percentage of an overall surface area of the composite electrode so that a contact footprint between the exposed portion and the phase change media is small relative to a surface area of the phase change media and Joule heat transfer from the phase change media into the composite electrode is reduced.Type: GrantFiled: April 4, 2002Date of Patent: December 30, 2003Assignee: Hewlett-Packard Company, L.P.Inventors: Heon Lee, Dennis M. Lazaroff
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Publication number: 20030189200Abstract: A low heat loss and small contact area electrode structure for a phase change media memory device is disclosed. The memory device includes a composite electrode that includes a dielectric mandrel that is connected with a substrate and having a tapered shape that terminates at a vertex. An electrically conductive material conformally covers the dielectric mandrel and terminates at a tip. A first dielectric layer covers all of the composite electrode except an exposed portion of the composite electrode that is adjacent to the tip. A phase change media is in contact with the exposed portion. The exposed portion is only a small percentage of an overall surface area of the composite electrode so that a contact footprint between the exposed portion and the phase change media is small relative to a surface area of the phase change media and Joule heat transfer from the phase change media into the composite electrode is reduced.Type: ApplicationFiled: April 4, 2002Publication date: October 9, 2003Inventors: Heon Lee, Dennis M. Lazaroff
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Publication number: 20030183868Abstract: A memory structure that includes a first electrode, a second electrode having an edge, a third electrode, a control element disposed between the first electrode and the second electrode, and memory storage element disposed between the edge of the second electrode and the third electrode.Type: ApplicationFiled: April 2, 2002Publication date: October 2, 2003Inventors: Peter Fricke, Andrew Koll, Dennis M. Lazaroff, Andrew L. Van Brocklin
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Publication number: 20030183867Abstract: A memory structure that includes a first electrode, a second electrode, a third electrode, a control element disposed between the first electrode and the second electrode, and a memory storage element disposed between the second electrode and the third electrode. At least one of the control element and memory storage element is protected from contamination by at least one of the first electrode, second electrode and third electrode.Type: ApplicationFiled: April 2, 2002Publication date: October 2, 2003Inventors: Peter Fricke, Andrew Koll, Dennis M. Lazaroff, Andrew L. Van Brocklin