Patents by Inventor Dennis P. Biondi

Dennis P. Biondi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for in-situ measuring of vibrational energy in a process bath of a vibrational cleaning system
    Patent number: 7111517
    Abstract: Apparatus and method are provided for in-situ measurement of vibrational energy applied to a wafer in a process bath of a vibrational cleaning system. The apparatus may be made up of a test wafer comprising an array of pressure sensing elements disposed thereon for monitoring power level variation of a time-varying pressure wave. The time-varying pressure wave is indicative of vibrational energy that would be applied to a wafer in the process bath in the position of the test wafer.
    Type: Grant
    Filed: July 29, 2004
    Date of Patent: September 26, 2006
    Assignee: Agere Systems, Inc.
    Inventors: Daniel Charles Kerr, Alan R. Olds, Bradley Curtis Deselms, Dennis P. Biondi, William A. Russell
  • Low temperature elevated pressure glass flow/re-flow process
    Patent number: 4420503
    Abstract: A method of reducing the time and temperature for either flowing or re-flowing a glass layer on a semiconductor device is described. The method involves conducting the flow or re-flow process steps at an elevated pressure which reduces both the time and the temperature required to achieve proper flow and re-flow characteristics.
    Type: Grant
    Filed: May 17, 1982
    Date of Patent: December 13, 1983
    Assignee: RCA Corporation
    Inventors: Chung W. Leung, Robert H. Dawson, Martin A. Blumenfeld, Dennis P. Biondi
  • Temperature gradient means in reactor tube of vapor deposition apparatus
    Patent number: 4256052
    Abstract: A diffusion furnace having particular utility in the processing of SOS devices wherein a temperature gradient, per unit length of furnace tube, is provided at a section of a reaction tube extending between the furnace and the scavenger and load-unload chambers in order to minimize the thermal shock to which a sapphire wafer may be subject, either at the commencement of processing when the wafer is first introduced into the furnace or at the conclusion of the processing as the wafer is being withdrawn from the furnace.
    Type: Grant
    Filed: October 2, 1979
    Date of Patent: March 17, 1981
    Assignee: RCA Corp.
    Inventors: Raymond V. Johnson, Dennis P. Biondi