Patents by Inventor Deok Hwang KWON

Deok Hwang KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ANODE-FREE ALL-SOLID-STATE BATTERY INCLUDING SOLID ELECTROLYTE HAVING HIGH ION CONDUCTIVITY AND SURFACE-ROUGHENED ANODE CURRENT COLLECTOR
    Publication number: 20220393180
    Abstract: Disclosed is an anode-free all-solid-state battery having improved charge/discharge cycle stability. Specifically, the anode-free all-solid-state battery includes a cathode layer containing a cathode active material, an anode current collector layer, and a solid electrolyte layer interposed between the cathode layer and the anode current collector layer, wherein the anode current collector layer has a surface roughness (Rq) of 100 nm to 1,000 nm.
    Type: Application
    Filed: March 1, 2022
    Publication date: December 8, 2022
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Sang Baek PARK, Byung Kook KIM, Jong Ho LEE, Ji Won SON, Kyung Joong YOON, Hyoung Chul KIM, HO IL JI, Sung Eun YANG, Deok Hwang KWON, Hyung Mook KANG, Dong Hee GU
  • Resistance random access memory device
    Patent number: 10043973
    Abstract: Provided is a resistance random access memory device comprising: a first electrode; a second electrode; and a metallic oxide formed between the first electrode and the second electrode. Particularly, provided is a resistance random access memory device wherein the metallic oxide comprises a first crystal grain and a second crystal grain which differ from each other in crystallographic orientation and form a boundary area; wherein a surface is intervened between the first crystal grain and the second crystal grain in the boundary area, the surface having a surface index corresponding to a surface crystallographically consisting only of oxygen among the crystal faces of the metallic oxide; and wherein the boundary area is a surface in which an electrically conductive path is formed when voltage is applied between the first electrode and the second electrode.
    Type: Grant
    Filed: August 26, 2015
    Date of Patent: August 7, 2018
    Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Deok Hwang Kwon, Mi Young Kim
  • RESISTANCE RANDOM ACCESS MEMORY DEVICE
    Publication number: 20180026184
    Abstract: Provided is a resistance random access memory device comprising: a first electrode; a second electrode; and a metallic oxide formed between the first electrode and the second electrode. Particularly, provided is a resistance random access memory device wherein the metallic oxide comprises a first crystal grain and a second crystal grain which differ from each other in crystallographic orientation and form a boundary area; wherein a surface is intervened between the first crystal grain and the second crystal grain in the boundary area, the surface having a surface index corresponding to a surface crystallographically consisting only of oxygen among the crystal faces of the metallic oxide; and wherein the boundary area is a surface in which an electrically conductive path is formed when voltage is applied between the first electrode and the second electrode.
    Type: Application
    Filed: August 26, 2015
    Publication date: January 25, 2018
    Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Deok Hwang KWON, Mi Young KIM