Abstract: A display device includes a plurality of pixels including alignment electrodes and light emitting elements disposed between the alignment electrodes, and the alignment electrodes including outer alignment electrodes and center alignment electrodes disposed between the outer alignment electrodes. A distance between the center alignment electrodes is different from a distance between the center alignment electrodes and the outer alignment electrodes.

Abstract: A display device comprises first and second pixels, a light-emitting layer, color conversion layers, and color filter layers, the light-emitting layer comprising first and second light-emitting elements in the first and second pixels, wherein the color conversion layers comprise first and second color conversion layers in the first and second pixels, the color filter layers comprise first and second color filter layers in the first and second pixels, the first and second light-emitting elements emit first light having a central wavelength range of a first wavelength, the first and second color conversion layers contain color conversion particles converting the first light into second light having a central wavelength range of a second wavelength longer than the first wavelength, the first color filter layer transmits the first light and blocks the second light, and the second color filter layer transmits the second light and blocks transmission of the first light.

Abstract: Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.

Abstract: A light emitting device includes: a base substrate; a plurality of unit regions provided on the base substrate; a barrier disposed at a boundary of the unit regions to surround each of the unit regions; a dam disposed in each of the unit regions to be spaced apart from the barrier; a first electrode provided in each of unit light emitting regions surrounded by the dam; a second electrode disposed in each of the unit light emitting regions, the second electrode of which at least one region is provided opposite to the first electrode; and one or more LEDs provided in each of the unit light emitting regions, the one or more LEDs being electrically connected between the first electrode and the second electrode.

Abstract: There is disclosed an antibacterial glass composition, a preparing method of an antibacterial glass coating film using the same and an electric home appliance including the same. The antibacterial glass composition according to the present disclosure and the antibacterial glass coating film using the same are applied to an electric home appliance, thereby exhibiting excellent antibacterial properties and heavy metal elution safety, and exhibiting excellent transmittance (70% or more) when applied to a transparent glass substrate.

Abstract: The present invention relates to: a steel sheet for a seismic damper used to provide a structure with seismic resistance against earthquakes; and a manufacturing method of same, and more specifically, to a steel sheet which is for a seismic damper and has a superior toughness property, and a manufacturing method of same.

Abstract: The present invention provides a steel material for a seismic damper, and a manufacturing method for same. The steel material comprises, in wt %, at most 0.006% of C, at most 0.05% of Si, at most 0.3% of Mn, at most 0.02% of P, at most 0.01% of S, 0.005 to 0.05% of Al, at most 0.005% of N, 48/14×[N] to 0.05% of Ti (here, [N] is the nitrogen content in wt %), 0.04 to 0.15% of Nb, and the remainder in Fe and other unavoidable impurities, and has a ferrite single structure, and has a ferrite grain average particle size of 150 to 500 ?m in a region of a surface layer part, corresponding to 30% of the total thickness from the surface thereof.

Abstract: The present invention is to provide a steel material having low surface hardness and excellent low temperature impact toughness, and a method for manufacturing same.

Abstract: A high-strength austenite-based high-manganese steel material and a manufacturing method for the same, the steel material comprising: manganese (Mn): 20 to 23 wt %, carbon (C): 0.3 to 0.5 wt %, silicon (Si): 0.05 to 0.50 wt %, phosphorus (P): 0.03 wt % or less, sulfur (S): 0.005 wt % or less, aluminum (Al): 0.050 wt % or less, chromium (Cr): 2.5 wt % or less, boron (B): 0.0005 to 0.01 wt %, nitrogen (N): 0.03 wt % or less, and a balance of iron (Fe) and other inevitable impurities, wherein stacked defect energy (SFE) represented by the following relationship 1 is 3.05 mJ/m2 or more, and a microstructure comprises 95 area % or more (including 100 area %) of austenite, and comprises 6 area % or more of strain grain boundaries in an austenite recrystallized grain, is provided. SFE(mJ/m2)=?24.2+0.950*Mn+39.0*C?2.53*Si?5.50*Al?0.765*Cr??[Relationship 1] where Mn, C, Cr, Si, and Al denote weight percent of respective components.

Abstract: Provided are a method for managing bedsores based on an artificial intelligence model and an electronic device performing the same. According to an exemplary embodiment, a method for managing, by an electronic device, bedsores based on an artificial intelligence model may include: acquiring user information of a user who uses a smart mat connected to the electronic device; acquiring at least one type of sensor data from the smart mat connected to the electronic device; when at least one type of sensor data is input, acquiring the bedsores management contents for the user from the artificial intelligence model by inputting the sensor data into the artificial intelligence model that outputs the bedsores management contents for each user according to the user information; and outputting the acquired bedsores management contents.

Abstract: An aspect of the present invention provides: a steel for a pressure vessel, the steel having excellent surface quality while having excellent strength and toughness even after a long-term post-weld heat treatment (PWHT); and a method for manufacturing same.

Abstract: A high-strength structural steel material having excellent fatigue crack propagation inhibitory characteristics according to an aspect of the present invention contains, by weight, 0.02-0.12% of C, 1.7-2.5% of Mn, 0.01-0.8% of Si, 0.005-0.5% of Al, and the balance Fe and unavoidable impurities, wherein a microstructure of the structural steel sheet material is divided into a surface layer portion outside and a central portion inside along a thickness direction; the surface layer portion comprises tempered bainite as a matrix structure, fresh martensite as a second structure, and austenite as a residual structure; and the central portion comprises lath bainite.

Abstract: The present invention relates to a high manganese steel for low temperature applications and a method for manufacturing the same. The high manganese steel contains 0.3 wt % to 0.8 wt % of C, 18 wt % to 26 wt % of Mn, 0.01 wt % to 1 wt % of Si, 0.01 wt % to 0.5 wt % of Al, 0.1 wt % or less of Ti (excluding 0%), 1 wt % to 4.5 wt % of Cr, 0.1 wt % to 0.9 wt % of Cu, 0.03 wt % or less of S (excluding 0%), 0.3 wt % or less of P (excluding 0%), 0.001 wt % to 0.03 wt % of N, 0.004 wt % or less of B (excluding 0%), and a remainder of Fe and other inevitable impurities, wherein a microstructure comprises an austenite single phase structure, and an average grain size of the austenite is 50 ?m or less.

Abstract: A structural steel having excellent brittle crack propagation resistance, according to one aspect of the present invention, comprises, by wt %, 0.02-0.12% of C, 0.01-0.8% of Si, 1.7-2.5% of Mn, 0.005-0.5% of Al, and the balance of Fe and inevitable impurities, wherein an outer surface part and an inner center part thereof are microstructurally distinguished in the thickness direction, and the surface part comprises tempered bainite as a base structure, comprises fresh martensite as a second structure and can comprise austenite as a residual structure.

Abstract: Provided according to one preferred aspect of the present invention are austenitic steel material having superb abrasion resistance and toughness, and a method for producing the austenite steel material. The austenitic steel material having superb abrasion resistance and toughness according to one preferred aspect of the present invention comprises, in wt %, 0.6-1.9% carbon (C); 12-22% manganese (Mn); 5% or lower (excluding 0%) chromium (Cr); 5% or lower (excluding 0%) copper (Cu); 0.5% or lower (excluding 0%) aluminum (Al); 1.0% or lower (excluding 0%) silicon (Si); 0.1% or lower (including 0%) phosphorous (P); 0.02% or lower (including 0%) sulfur (S); and the rest in Fe and unavoidable impurities, and has the microstructure comprising, by surface area fraction, 97% or higher (including 100%) austenite and 3% or lower (including 0%) carbide.

Abstract: Provided are high-strength steel plate having excellent low-temperature impact toughness and method of manufacturing the same. The present disclosure relates to a high-strength steel plate comprising, by weight %, carbon (C): 0.04-0.12%, silicon (Si): 0.1-0.5%, manganese (Mn): 1.2-2.5%, phosphorus (P): 0.01% or less, sulfur (S): 0.01% or less, aluminum (Al): 0.01-0.08%, niobium (Nb): 0.01-0.08%, chromium (Cr): 0.01-0.5%, nickel (Ni): 0.4-1.0%, copper (Cu): 0.5% or less, molybdenum (Mo): 0.01-0.5%, vanadium (V): 0.05% or less, titanium (Ti): 0.005-0.02%, boron (B): 0.001-0.0025%, nitrogen (N): 0.002-0.01%, the balance Fe and inevitable impurities, a Ceq value being less than 0.55.

Abstract: One aspect of the present invention is to provide a superior steel plate and a method for manufacturing same, the steel plate, as an ultra-thick steel plate, having high strength as well as superb imact toughness low-temperature, and excellent resistance to formation of cracks.

Abstract: A memory device includes a common gate input buffer circuit. The input buffer circuit includes an input node configured to receive a signal representative of data to be stored in the memory device and a voltage reference node. The input buffer circuit further includes an amplification circuit electrically coupled to the input node and to the voltage reference node and configured to amplify the signal to provide for an amplified signal. The input buffer circuit additionally includes an equalization circuit electrically coupled to the amplification circuit and configured to process the amplified signal to provide for a filtered signal and an output circuit electrically coupled to equalization circuit and configured to provide for at least one output signal based on the filtered signal, wherein the output signal comprises a differential output signal and wherein the common gate input buffer circuit does not include a common mode feedback (CMFB) loop.

Abstract: One aspect of the present invention may provide steel having high strength characteristics and excellent corrosion resistance, which is suitable for a structure, and a method for manufacturing same.

Abstract: A memory device includes a common gate input buffer circuit. The input buffer circuit includes an input node configured to receive a signal representative of data to be stored in the memory device and a voltage reference node. The input buffer circuit further includes an amplification circuit electrically coupled to the input node and to the voltage reference node and configured to amplify the signal to provide for an amplified signal. The input buffer circuit additionally includes an equalization circuit electrically coupled to the amplification circuit and configured to process the amplified signal to provide for a filtered signal and an output circuit electrically coupled to equalization circuit and configured to provide for at least one output signal based on the filtered signal, wherein the output signal comprises a differential output signal and wherein the common gate input buffer circuit does not include a common mode feedback (CMFB) loop.