Patents by Inventor Der-Sheng Chao

Der-Sheng Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase change memory device and method for fabricating the same
    Patent number: 7989795
    Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: August 2, 2011
    Assignees: ProMOS Technologies Inc., Nanya Technology Corporation, Winbond Electronics Corp.
    Inventors: Wei-Su Chen, Yi-Chan Chen, Hong-Hui Hsu, Chien-Min Lee, Der-Sheng Chao, Chih Wei Chen, Ming-Jinn Tsai
  • Phase change memory devices and methods for fabricating the same
    Patent number: 7745811
    Abstract: Phase change memory devices and methods for fabricating the same. An exemplary phase change memory device includes a conductive element formed in a dielectric layer. A phase change material layer is formed in the dielectric layer. A conductive layer extends in the dielectric layer to respectively electrically connect the phase change layer and a sidewall of the conductive element.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: June 29, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Hengyuan Lee, Der-Sheng Chao
  • PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20080164504
    Abstract: A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.
    Type: Application
    Filed: September 18, 2007
    Publication date: July 10, 2008
    Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.
    Inventors: Wei-Su Chen, Yi-Chan Chen, Hong-Hui Hsu, Chien-Min Lee, Der-Sheng Chao, Chih-Wei Chen, Ming-Jinn Tsai
  • PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
    Publication number: 20080042243
    Abstract: Phase change memory devices and methods for fabricating the same. An exemplary phase change memory device comprises a conductive element formed in a dielectric layer. A phase change material layer is formed in the dielectric layer. A conductive layer extends in the dielectric layer to respectively electrically connect the phase change layer and a sidewall of the conductive element.
    Type: Application
    Filed: November 17, 2006
    Publication date: February 21, 2008
    Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.
    Inventors: Hengyuan Lee, Der-Sheng Chao