Abstract: One aspect of the application can provide a system and method for replacing a failing node with a spare node in a non-uniform memory access (NUMA) system. During operation, in response to determining that a node-migration condition is met, the system can initialize a node controller of the spare node such that accesses to a memory local to the spare node are to be processed by the node controller, quiesce the failing node and the spare node to allow state information of processors on the failing node to be migrated to processors on the spare node, and subsequent to unquiescing the failing node and the spare node, migrate data from the failing node to the spare node while maintaining cache coherence in the NUMA system and while the NUMA system remains in operation, thereby facilitating continuous execution of processes previously executed on the failing node.

Abstract: An output buffer circuit of a semiconductor memory device can produce multiple output buffer drive strengths. An electronic system including a memory device in which such an output buffer circuit is implemented can include a mechanism for enabling the output buffer drive strength to be easily selected by a user of the memory device (such as an assembler of an electronic system including the memory device) from the multiple possible drive strengths. The invention thus enables a memory device to be easily configured to have an output buffer drive strength that is compatible with a wide variety of electrical loads to be driven by the output buffers of the memory device.

Abstract: An output buffer circuit of a semiconductor memory device can produce multiple output buffer drive strengths. An electronic system including a memory device in which such an output buffer circuit is implemented can include a mechanism for enabling the output buffer drive strength to be easily selected by a user of the memory device (such as an assembler of an electronic system including the memory device) from the multiple possible drive strengths. The invention thus enables a memory device to be easily configured to have an output buffer drive strength that is compatible with a wide variety of electrical loads to be driven by the output buffers of the memory device.