Patents by Inventor Derrick Kamber

Derrick Kamber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8729559
    Abstract: A relaxed epitaxial AlxInyGa(1-x-y)N layer on a substrate having a semipolar surface orientation includes a plurality of misfit dislocations in portions of the thickness of the epitaxial layer to reduce bi-axial strain to a relaxed state.
    Type: Grant
    Filed: October 13, 2011
    Date of Patent: May 20, 2014
    Assignee: Soraa, Inc.
    Inventors: Mike Krames, Mark D'Evelyn, Rajeev Pakalapati, Alex Alexander, Derrick Kamber
  • Publication number: 20120091465
    Abstract: A relaxed epitaxial AlxInyGa(1-x-y)N layer on a substrate having a semipolar surface orientation includes a plurality of misfit dislocations in portions of the thickness of the epitaxial layer to reduce bi-axial strain to a relaxed state.
    Type: Application
    Filed: October 13, 2011
    Publication date: April 19, 2012
    Applicant: Soraa, Inc.
    Inventors: Mike Krames, Mark D'Evelyn, Rajeev Pakalapati, Alex Alexander, Derrick Kamber
  • Publication number: 20080083970
    Abstract: A method for growing III-nitride films containing aluminum using Hydride Vapor Phase Epitaxy (HVPE) is disclosed, and comprises using corrosion-resistant materials in an HVPE system, the region of the HVPE system containing the corrosion-resistant materials being an area that contacts an aluminum halide, heating a source zone with an aluminum-containing source above a predetermined temperature, and growing the III-nitride film containing aluminum within the HVPE system containing the corrosion-resistant material.
    Type: Application
    Filed: May 8, 2007
    Publication date: April 10, 2008
    Inventors: Derrick Kamber, Benjamin Haskell, Shuji Nakamura, Tadao Hashimoto