Abstract: The present invention belongs to the field of tumor immunotherapy, and relates to a humanized anti-VEGF antibody Fab fragment. The present invention discloses nucleic acid sequences (including heavy/light chain variable regions) encoding said antibody fragment, and vectors, pharmaceutical compositions and kits containing said nucleic acid sequences. The anti-VEGF antibody Fab fragments disclosed in the present invention can specifically bind to VEGF with high affinity and block the binding of VEGF to the receptor VEGFR2, and also neutralize the proliferative effect of VEGF on HUVEC cells. Compared to the full-length antibody, antibodies in the form of Fab fragments have stronger penetrability and less toxic in terms of gastrointestinal perforation, hypertension and hemorrhage and do not stimulate the complement cascade reaction, thus reducing the risk of endophthalmitis and autoimmune inflammatory reactions.

Abstract: An electronic or optoelectronic device includes: (1) a semiconductor layer; (2) a dielectric layer in contact with the semiconductor layer and including a polar elastomer; and (3) an electrode. The dielectric layer is disposed between the electrode and the semiconductor layer, and the polar elastomer includes a backbone structure and polar groups that are bonded as side chains to the backbone structure, and each of the polar groups includes 2 or more atoms.

Abstract: An electronic or optoelectronic device includes: (1) a semiconductor layer; (2) a dielectric layer in contact with the semiconductor layer and including a polar elastomer; and (3) an electrode. The dielectric layer is disposed between the electrode and the semiconductor layer, and the polar elastomer includes a backbone structure and polar groups that are bonded as side chains to the backbone structure, and each of the polar groups includes 2 or more atoms.

Abstract: An electronic or optoelectronic device includes: (1) a semiconductor layer; (2) a pair of electrodes electrically coupled to the semiconductor layer; and (3) a dielectric layer in contact with the semiconductor layer and including a polar elastomer, where the elastomer has a glass transition temperature Tg that is no greater than 25° C.

Abstract: An electronic or optoelectronic device includes: (1) a semiconductor layer; (2) a pair of electrodes electrically coupled to the semiconductor layer; and (3) a dielectric layer in contact with the semiconductor layer and including a polar elastomer, where the elastomer has a glass transition temperature Tg that is no greater than 25° C.