Abstract: A wavelength converting structure is disclosed, the wavelength converting structure including an SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni2+, a perovskite type phosphor doped with Ni2+ and Cr3+, and a garnet type phosphor doped with Ni2+ and Cr3+.

Abstract: Embodiments of the invention include a light source and a wavelength converting structure disposed in a path of light emitted by the light source. The wavelength converting structure includes a first phosphor that emits infrared light and a second phosphor that emits visible light. In some embodiments, the light source emits first light, the second phosphor absorbs the first light and emits second light, and the first phosphor absorbs the first light and emits third light and absorbs the second light and emits fourth light.

Abstract: A wavelength converting structure is disclosed, the wavelength converting structure including an SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni2+, a perovskite type phosphor doped with Ni2+ and Cr3+, and a garnet type phosphor doped with Ni2+ and Cr3+.

Abstract: A wavelength converting structure is disclosed, the wavelength converting structure including a spinel type SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including AE1-x-zAz+0.5(x-y)D2+0.5(x-y)-z-u EzO4:Niy,Cru where AE=Mg, Zn, Co, or Be, or mixtures thereof, A=Li, Na, Cu, or Ag, or mixtures thereof, D=Ga, Al, B, In, or Sc, or mixtures thereof, and E=Si, Ge, Sn, Ti, Zr, or Hf, or mixtures thereof; where 0?x?1, 0<y?0.1, 0?z?1, 0?u?0.2.

Abstract: Embodiments of the invention include a light source and a wavelength converting structure disposed in a path of light emitted by the light source. The wavelength converting structure includes a first phosphor that emits infrared light and a second phosphor that emits visible light. In some embodiments, the light source emits first light, the second phosphor absorbs the first light and emits second light, and the first phosphor absorbs the first light and emits third light and absorbs the second light and emits fourth light.

Abstract: A phosphor converted light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the light emitting layer being configured to emit light having a first peak wavelength; a first phosphor configured to emit light having a second peak wavelength; and a second phosphor configured to emit light having a third peak wavelength. The second phosphor is an Eu3+-activated phosphor, configured such that in the excitation spectrum at 298K and 1.013 bar, a maximum intensity in a wavelength range between 460 nm and 470 nm is at least 5% of a maximum intensity in a wavelength range between 220 nm to 320 nm.

Abstract: The present invention relates to the use of composites or compositions of diamond/non-diamond material, e.g. diamond/non-diamond carbon material for chemical or biological analysis. The invention further relates to the use of this material in separation adherence and detection of chemical of biological samples. Applications of either structurized substrates or mixed phase particles of this material include but are not limited to processes which involve desorption-ionization of a sample, more specifically mass spectroscopy.

Abstract: A semiconductor light emitting device is combined with a wavelength converting material. The semiconductor light emitting device is configured to emit first light of a first peak wavelength. The wavelength converting material is configured to absorb at least a portion of the first light and emit second light of a second peak wavelength. In some embodiments, the first wavelength converting material is (Ba1-xSr)2-y-0.5zSi5N8-zOz:Euy2+ where 0.2<x<0.3, (Ba1-xCax)2-y-0.5zSi5N8-zOz:Euy2+ where 0.01<x<0.2, or M2Si5-aAaN8-aOa:Eu2+ where M=Sr, Ba, Ca; A=Al, B, Ga, Sc; and 0.01<a<0.2.

Abstract: An optical signal processing device equipped with a source of electromagnetic radiation of variable intensity, a non-linear optical component, which comprises at least one photoluminescent carbon nanotube, and with a means of detecting electromagnetic radiation utilizes the non-linearity of the photoluminescence of carbon nanotubes for optical signal processing. The invention also relates to a non-linear optical component.

Abstract: The invention relates to a method of manufacturing europium-doped (Ca1-xSrx)S (0£×£1) luminescent material with a short decay time and a high thermal extinction temperature, wherein the europium-doped strontium sulfide is subjected to at least a first caldnation step at high temperatures in the presence of at least one iodine compound. The invention further relates to the luminescent material as such and to its use for light-emitting components such as light-emitting diodes (LEDs) and laser diodes coated with luminescent materials.

Abstract: A gas discharge lamp fitted with a gas discharge vessel filled with a gas filling suitable for a gas discharge which emits VUV radiation, with a phosphor coating containing a downconversion phosphor and with means for igniting and maintaining a gas discharge, in which the downconversion phosphor has, in a host lattice, a pair of activators of a first lanthanoid ion and a second lanthanoid ion and a sensitizer selected from the group formed by the thallium(I) ion, lead(II) ion and bismuth(III) ion, is environmentally friendly and has a high lamp efficiency &eegr;lamp.

Abstract: In an electron-emitting component with a cold cathode comprising a substrate and a cover layer with a diamond-containing material consisting of nano-crystalline diamond having a Raman spectrum with three lines, i.e. at K=1334.+-.4 cm.sup.-1 with a half-width value of 12.+-.6 cm.sup.-1, at K=1140.+-.20 cm.sup.-1 and at K=1470.+-.20 cm.sup.-1, the cold cathode exhibits a low extraction field strength, a stable emission at pressures below 10.sup.-4 mbar, a steep current-voltage characteristic and stable emission currents in excess of 1 microampere/mm.sup.2. The electron emission of the component demonstrates a long-time stability, and a constant intensity of the electron beam across its cross-section.

Abstract: The invention relates to an antifriction body (3), in particular for a magnetic head (1), whose antifriction surface (4) is provided with an antifriction layer (4) which contains diamond crystals and which is provided by means of a CVD process. Damage to the elements sliding past the antifriction layer is precluded in that the antifriction layer (4) contains hexagonal lonsdaleite crystals.