Abstract: Described herein are ferroelectric (FE) memory cells that include transistors having gate stacks separate from FE capacitors of these cells. An example memory cell may be implemented as an IC device that includes a support structure (e.g., a substrate) and a transistor provided over the support structure and including a gate stack. The IC device also includes a FE capacitor having a first capacitor electrode, a second capacitor electrode, and a capacitor insulator of a FE material between the first capacitor electrode and the second capacitor electrode, where the FE capacitor is separate from the gate stack (i.e., is not integrated within the gate stack and does not have any layers that are part of the gate stack). The IC device further includes an interconnect structure, configured to electrically couple the gate stack and the first capacitor electrode.

Abstract: Techniques are provided herein to form semiconductor devices on a substrate with an alternative crystallographic surface orientation. The techniques are particularly useful with respect to gate-all-around and forksheet transistor configurations. A substrate having a (110) crystallographic surface orientation forms the basis for the growth of alternating types of semiconductor layers. Both n-channel and p-channel transistors may be fabricated using silicon nanoribbons formed from some of the alternating semiconductor layers. The crystallographic surface orientation of the Si nanoribbons will reflect the same crystallographic surface orientation of the substrate, which leads to a higher hole mobility across the Si nanoribbons of the p-channel devices and an overall improved CMOS device performance.

Abstract: An integrated circuit capacitor structure, includes a first electrode includes a cylindrical column, a ferroelectric layer around an exterior sidewall of the cylindrical column and a plurality of outer electrodes. The plurality of outer electrodes include a first outer electrode laterally adjacent to a first portion of an exterior of the ferroelectric layer and a second outer electrode laterally adjacent to a second portion of the exterior of the ferroelectric layer, wherein the second outer electrode is above the first outer electrode.

Abstract: Described herein are ferroelectric (FE) memory cells that include transistors having gate stacks separate from FE capacitors of these cells. An example memory cell may be implemented as an IC device that includes a support structure (e.g., a substrate) and a transistor provided over the support structure and including a gate stack. The IC device also includes a FE capacitor having a first capacitor electrode, a second capacitor electrode, and a capacitor insulator of a FE material between the first capacitor electrode and the second capacitor electrode, where the FE capacitor is separate from the gate stack (i.e., is not integrated within the gate stack and does not have any layers that are part of the gate stack). The IC device further includes an interconnect structure, configured to electrically couple the gate stack and the first capacitor electrode.