Abstract: Sputtering targets having reduced burn-in times are described herein that include: a) a machine-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the machine-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Sputtering targets having reduced burn-in times are described herein that include: a surface material, and a core material, wherein at least one of the surface material or the core material comprises a relatively band-free crystallographic orientation.

Abstract: The invention includes methods by which hot isostatic pressing is utilized to form physical vapor deposition targets. In particular aspects, the physical vapor deposition targets can contain one or more of iridium, cobalt, ruthenium, tungsten, molybdenum, titanium, aluminum and tantalum; and/or one or more of aluminides, silicides, carbides and chalcogenides. The invention also includes three-dimensional targets which include one or more of iridium, cobalt, ruthenium, tungsten molybdenum, titanium, aluminum and tantalum.

Abstract: A PVD component forming method includes identifying two or more solids having different compositions, homogeneously mixing particles of the solids using proportions which yield a bulk formula, consolidating the homogeneous particle mixture to obtain a rigid mass while applying pressure and using a temperature below the minimum temperature of melting or sublimation of the solids, and forming a PVD component including the mass. A chalcogenide PVD component includes a rigid mass containing a bonded homogeneous mixture of particles of two or more solids having different compositions, the mass having a microcomposite structure exhibiting a maximum feature size of 500 ?m or less, and one or more of the solids containing a compound of two or more bulk formula elements. An alternative PVD component exhibits a uniform composition with less than 10% difference in atomic compositions from feature to feature.

Abstract: A chalcogenide PVD component includes a bonded mixture of particles of a first solid and a second solid. The first solid contains a first compound. The particle mixture may exhibit a minimum solid phase change temperature greater than a solid phase change phase temperature of an element in the first compound. The particle mixture may exhibit a maximum solid phase change temperature less than a solid phase change temperature of an element in the first compound. The first compound may be a congruently melting line compound. The bonded mixture may lack melt regions or sublimation gaps. The particle mixture may exhibit a bulk formula including three or more elements. The particle mixture may include two or more line compounds.

Abstract: The invention includes components containing metallic material. The metallic material can be comprised of a plurality of grains, with substantially all of the grains being substantially equiaxial, and the grains having an average grain size of less than or equal to about 30 microns. The components can be formed by utilization of a uniaxial vacuum hot press together with a starting metallic powder characterized by 325 mesh size. An exemplary component is a sputtering target having a high degree of uniformity across its sputtering face as well as throughout its thickness.

Abstract: The invention includes methods of forming physical vapor deposition targets, and includes targets and target assemblies. The methods of forming the targets comprise hot-pressing or die forging of suitable materials to form a target blank. The target blank has a pair of opposing surfaces, with one of the opposing surfaces having a topography that is substantially an inverse of an expected wear profile. The target blank can be bonded to a backing plate to form a target assembly or can be utilized as a monolithic target.

Abstract: The invention includes an assembly (130) having a physical vapor deposition target (102) separated from a backing plate (120) with a layer (104) consisting essentially of one or both of molybdenum and tantalum. The invention also includes an assembly comprising a backing plate of at least 99.9% aluminum bound to a target of at least 99.9% molybdenum through a bond having a strength of at least about 6,000 pounds per square inch (psi). Additionally, the invention includes a method of bonding a tungsten-containing material to an aluminum-containing material. A layer of molybdenum-containing material (104) is provided between the tungsten-containing material (102) and the aluminum-containing material (120); and is bonded to both the tungsten-containing material (102) and the aluminum-containing material (120).

Abstract: The invention includes a non-magnetic physical vapor deposition target. The target has at least 30 atom percent total of one or more of Co, Ni, Ta, Ti, Pt, Mo and W, and at least 10 atom percent silicon. The target also has one phase and not more than 1% of any additional phases other than said one phase. In another aspect, the invention includes a non-magnetic physical vapor deposition target consisting essentially of Co and/or Ni, silicon, and one phase.

Abstract: The invention includes methods of forming physical vapor deposition targets, and includes targets and target assemblies. The methods of forming the targets comprise hot-pressing or die forging of suitable materials to form a target blank. The target blank has a pair of opposing surfaces, with one of the opposing surfaces having a topography that is substantially an inverse of an expected wear profile. The target blank can be bonded to a backing plate to form a target assembly or can be utilized as a monolithic target.

Abstract: The invention includes a non-magnetic physical vapor deposition target. The target has at least 30 atom percent total of one or more of Co, Ni, Ta, Ti, Pt, Mo and W, and at least 10 atom percent silicon. The target also has one phase and not more than 1% of any additional phases other than said one phase. In another aspect, the invention includes a non-magnetic physical vapor deposition target consisting essentially of Co and/or Ni, silicon, and one phase.

Abstract: Described is a hot pressed and sintered sputtering target assembly formed of hot pressed and sintered metal powder diffusion bonded together and to a backing plate by use of an intermediate adhesion layer of titanium or titanium alloy.