Abstract: The local bending of a silicon nanowire induces tensile strain in the wire due to the stretching of the silicon lattice. This in turn enhances the mobility of the free carriers (electrons) in the direction of transport along the wire. Thus, for example, when Gate-All-Around MOSFETs are fabricated along the nanowire, the mobility enhancement will translate into an improvement in the performance (current drive, speed) of the silicon nanowire MOSFETs. In summary, a semiconductor device comprises a substrate and a nanowire in connection with the substrate at a drain and at a source region, and the nanowire is bent to achieve enhanced mobility of charge carriers.

Abstract: The invention relates to methods for manufacturing semiconductor devices. Processes are disclosed for implementing suspended single crystal silicon nano wires (NWs) using a combination of anisotropic and isotropic etches and spacer creation for sidewall protection. The core dimensions of the NWs are adjustable with the integration sequences: they can be triangular, rectangular, quasi-circular, or an alternative polygonal shape. Depending on the length of the NWs, going from the sub-micron to millimeter range, the NWs may utilize support from anchors to the side, during certain processing steps. By changing the lithographic dimensions of the anchors compared to the NWs, the anchors may be reduced or eliminated during processing. The method covers, among other things, the integration of Gate-All-Around NW (GAA-NW) MOSFETs on a bulk semiconductor.

Abstract: A microelectrical device comprising two generally parallel electrodes (20,21) at least one of which is movable, and at least one of the electrodes comprising a layer of a semiconductor presenting space charge characteristics. The electrodes have a closed position an open position. A spring effect biases the movable electrode (21) towards the open position. When the movable electrode (21) is closed by a first voltage pulse (P1) a sufficiently high space charge density (10) is generated to hold the movable electrode (21) closed. When zero voltage is applied the movable electrode (21) is held closed by the built in space charge until the application of a second voltage pulse (P2) which decreases the space charge in the semiconductor (10) to allow the movable electrode(s) to be moved to the open position by the spring effect.

Abstract: Abrasive composition for the chemical-mechanical polishing in one stage of substrates used in the microelectronics semiconductors industry containing at least one metal layer and one insulator layer, comprising an acid aqueous suspension of individualized particles of colloidal silica, not linked to each other by siloxane bonds, having a mean particle diameter of between 5 and 20 nm and an oxidizing agent, and chemical-mechanical polishing process using such a composition.

Abstract: A microelectrical device has a ferroelectric layer (10) between parallel electrodes (20,21) at least one of which (21) is movable. The electrodes have a closed position in which the ferroelectric layer (10) is sandwiched between the two electrodes (21,21) and an open position in which the movable electrode (21) is spaced from the ferroelectric layer (10). A spring effect biases the movable electrode (21) towards the open position. When the movable electrode (21) is closed by a first voltage pulse (P1) the ferroelectric layer (10) is polarized to hold the movable electrode (21) closed. When zero voltage is applied the movable electrode (21) is held closed by remnant polarization of the ferroelectric material until the application of a second voltage pulse (P2) which cancels the remnant polarization of the ferroelectric material (10) to allow the movable electrode(s) to be moved to the open position by the spring effect.

Abstract: Abrasive composition for the chemical-mechanical polishing in one stage of substrates used in the microelectronics semiconductors industry containing at least one metal layer and one insulator layer, comprising an acid aqueous suspension of individualized particles of colloidal silica, not linked to each other by siloxane bonds, having a mean particle diameter of between 5 and 20 nm and an oxidizing agent, and chemical-mechanical polishing process using such a composition.