Abstract: An apparatus is disclosed for wireless power transfer circuitry with a multi-path architecture. In an example aspect, the apparatus includes a wireless power receiver with at least one receiving element, at least one output power node, and two or more power paths having at least one power path configured to be selectively activated. The two or more power paths are coupled between the at least one receiving element and the at least one output power node.

Abstract: Aspects of the disclosure are directed to direct battery connection within a voltage regulator system. In accordance with one aspect, distributing power from an internal battery as an active energy source includes receiving a battery voltage from the internal battery through a direct battery voltage connection; receiving a primary load voltage from a power conditioner; and regulating and combining the battery voltage and the primary load voltage using a plurality of phased regulator sections to generate a common output voltage. In one aspect, a power distribution system includes an internal battery to function as an active energy source for a load; a battery switch coupled to the internal battery; a power management integrated circuit (PMIC) coupled to the battery switch; and a direct battery voltage connection coupling the internal battery to the power management integrated circuit and bypassing the battery switch.

Abstract: A semiconductor device (10) having asymmetric source and drain regions is formed so that either the source or drain region is shorted to an isolated well (22). In one embodiment, the source region includes a source silicide region (42) and a source extension region (28), which are electrically and physically in contact with the well region (22), and the drain region includes a drain silicide region (46), a drain extension region (30) and a deep doped drain region (38). The source and drain regions have a conductivity that is different than that of the isolated well (22) in which they are formed. To prevent the formation of a deep doped source region when the deep doped drain region (38) is formed, a masking layer (34) is patterned to cover the source region during implantation of the deep doped drain region (38).