Patents by Inventor Dieter Eissler
Dieter Eissler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8946761Abstract: A radiation-emitting semi-conductor chip has a substrate and a semiconductor body arranged on the substrate and with a semiconductor layer sequence that includes an active region provided for producing radiation, an n-type region, and a covering layer arranged on a side of the n-type region that faces away from said active region. There is a contact structure arranged on the covering layer for the external electrical contacting of the n-type region. The covering layer has at least one recess through which the contact structure extends to the n-type region.Type: GrantFiled: July 15, 2011Date of Patent: February 3, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Dieter Eissler, Andreas Ploessl
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Patent number: 8835937Abstract: Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.Type: GrantFiled: February 18, 2005Date of Patent: September 16, 2014Assignee: Osram Opto Semiconductors GmbHInventors: Ralph Wirth, Herbert Brunner, Stefan Illek, Dieter Eissler
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Patent number: 8796714Abstract: A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.Type: GrantFiled: March 25, 2010Date of Patent: August 5, 2014Assignee: OSRAM Opto Semiconductor GmbHInventors: Vincent Grolier, Magnus Ahlstedt, Mikael Ahlstedt, Dieter Eissler
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Publication number: 20130214322Abstract: A radiation-emitting semi-conductor chip has a substrate and a semiconductor body arranged on the substrate and with a semiconductor layer sequence that includes an active region provided for producing radiation, an n-type region, and a covering layer arranged on a side of the n-type region that faces away from said active region. There is a contact structure arranged on the covering layer for the external electrical contacting of the n-type region. The covering layer has at least one recess through which the contact structure extends to the n-type region.Type: ApplicationFiled: July 15, 2011Publication date: August 22, 2013Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Dieter Eissler, Andreas Ploessl
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Patent number: 8502204Abstract: An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer.Type: GrantFiled: May 13, 2009Date of Patent: August 6, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Dieter Eissler, Siegfried Herrmann
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Patent number: 8501513Abstract: An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.Type: GrantFiled: September 14, 2006Date of Patent: August 6, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Magnus Ahlstedt, Dieter Eissler, Robert Walter, Ralph Wirth
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Patent number: 8476644Abstract: An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.Type: GrantFiled: April 25, 2008Date of Patent: July 2, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Stefan Illek, Andreas Ploessl, Alexander Heindl, Patrick Rode, Dieter Eissler
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Patent number: 8427839Abstract: An arrangement includes an optoelectronic component with two contacts; at least one further component part; at least one contact arranged between the optoelectronic component and the further component part; and at least one web arranged between the optoelectronic component and the further component part.Type: GrantFiled: September 9, 2008Date of Patent: April 23, 2013Assignee: OSRAM Opto Semiconductors GmbHInventor: Dieter Eissler
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Patent number: 8399893Abstract: A luminous means includes a first group of semiconductor chips and a second group of semiconductor chips, each group includes at least one semiconductor chip, wherein the first and second groups of semiconductor chips are arranged laterally alongside one another at least in part with respect to a main emission direction of the luminous means, and a third group of semiconductor chips which includes at least one semiconductor chip and is disposed downstream of the first and the second group with respect to the main emission direction, wherein each group of semiconductor chips emits electromagnetic radiation in wavelength ranges that differ from one another in pairs, radiation emitted by the third group of semiconductor chips has the shortest-wave wavelength range, radiation emitted by the first and second group of semiconductor chips at least partly passes into the at least one semiconductor chip of the third group, and mixed radiation is emitted by an emission area of the luminous means.Type: GrantFiled: August 7, 2009Date of Patent: March 19, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Dieter Eissler, Siegfried Herrmann
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Patent number: 8314430Abstract: An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.Type: GrantFiled: April 25, 2008Date of Patent: November 20, 2012Assignee: OSRAM Opto Semiconductors GmbHInventors: Stefan Illek, Andreas Ploessl, Alexander Heindl, Patrick Rode, Dieter Eissler
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Publication number: 20120112226Abstract: A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.Type: ApplicationFiled: March 25, 2010Publication date: May 10, 2012Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Vincent Grolier, Magnus Ahlstedt, Mikael Ahlstedt, Dieter Eissler
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Publication number: 20110114975Abstract: A luminous means includes a first group of semiconductor chips and a second group of semiconductor chips, each group includes at least one semiconductor chip, wherein the first and second groups of semiconductor chips are arranged laterally alongside one another at least in part with respect to a main emission direction of the luminous means, and a third group of semiconductor chips which includes at least one semiconductor chip and is disposed downstream of the first and the second group with respect to the main emission direction, wherein each group of semiconductor chips emits electromagnetic radiation in wavelength ranges that differ from one another in pairs, radiation emitted by the third group of semiconductor chips has the shortest-wave wavelength range, radiation emitted by the first and second group of semiconductor chips at least partly passes into the at least one semiconductor chip of the third group, and mixed radiation is emitted by an emission area of the luminous means.Type: ApplicationFiled: August 7, 2009Publication date: May 19, 2011Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Dieter Eissler, Siegfried Herrmann
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Publication number: 20110108860Abstract: An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer.Type: ApplicationFiled: May 13, 2009Publication date: May 12, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Dieter Eissler, Siegfried Herrmann
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Patent number: 7906352Abstract: A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.Type: GrantFiled: July 20, 2006Date of Patent: March 15, 2011Assignee: Osram Opto Semiconductors GmbHInventors: Herbert Brunner, Dieter Eissler, Helmut Fischer, Ewald Karl Michael Guenther, Alexander Heindl
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Publication number: 20100214727Abstract: An arrangement includes an optoelectronic component with two contacts; at least one further component part; at least one contact arranged between the optoelectronic component and the further component part; and at least one web arranged between the optoelectronic component and the further component part.Type: ApplicationFiled: September 9, 2008Publication date: August 26, 2010Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventor: Dieter Eissler
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Publication number: 20100171215Abstract: A method of producing optoelectronic components is indicated, in which a plurality of semiconductor bodies, each with a semiconductor layer sequence, are provided. In addition, a component carrier assembly with a plurality of connection pads is provided. The semiconductor bodies are positioned relative to the component carrier assembly. An electrically conductive connection is produced between the connection pads and the associated semiconductor bodies and the semiconductor bodies are attached to the component carrier assembly. The optoelectronic components are finished in that one component carrier (30) is formed from the component carrier assembly, to which the semiconductor bodies are attached, for each optoelectronic component.Type: ApplicationFiled: May 7, 2008Publication date: July 8, 2010Inventors: Helmut Fischer, Dieter Eissler, Alexander Heindl
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Publication number: 20100117111Abstract: An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.Type: ApplicationFiled: April 25, 2008Publication date: May 13, 2010Inventors: Stefan Illek, Andreas Ploessl, Alexander Heindl, Patrick Rode, Dieter Eissler
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Publication number: 20090262773Abstract: An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.Type: ApplicationFiled: September 14, 2006Publication date: October 22, 2009Inventors: Magnus Ahlstedt, Dieter Eissler, Robert Walter, Ralph Wirth
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Publication number: 20090212308Abstract: A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.Type: ApplicationFiled: July 20, 2006Publication date: August 27, 2009Applicant: OSRAM OPTO SEMICONDUCTORS GmbHInventors: Herbert Brunner, Dieter Eissler, Helmut Fischer, Ewald Karl Michael Guenther, Alexander Heindl
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Publication number: 20090065800Abstract: Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.Type: ApplicationFiled: February 18, 2005Publication date: March 12, 2009Inventors: Ralf Wirth, Herbert Brunner, Stefan Illek, Dieter Eissler