Abstract: A method for the manufacture of silicon layers containing boron and phosphorus dopants wherein the silicon wafers are positioned in a reaction chamber into which there is introduced, from separate sources, (a) tetraethylorthosilicate as a source of silicon dioxide, (b) trimethylborate as a source of boron, and (c) a phosphorus source. The three reactants are decomposed in the reaction chamber to deposit silicon dioxide doped with boron and phosphorus onto the wafers, the decomposition being carried out at a temperature of at least 600.degree. C. and at a substantially subatmospheric pressure.

Abstract: A process or method for the production of epitaxial layers on a monocrystalline substrate by moving a melt on a surface of the substrate, depositing the layer and then removing the remaining melt from the substrate characterized by the substrate being a crystal having two boundary edges, which are parallel to one another and in which no preferred edge growth occurs in a direction running at right angles to the boundary edges and pointing outward from the interior of the substrate crystal so that no portion of the melt will be retained as the melt is being removed after forming the layer.