Abstract: A measuring object for use in a heating apparatus for the thermal treatment of substrates is described, wherein the measuring object is the substrate to be treated or an object which in use has a substantially known temperature relation to the substrate to be treated, wherein the measuring object comprises a surface having at least one surface area, which acts as a measuring surface for an optical temperature measurement. A predetermined structure in the form of a plurality of recessions is formed in the surface area, in order to influence the emissivity of the surface area.

Abstract: A measuring object for use in a heating apparatus for the thermal treatment of substrates is described, wherein the measuring object is the substrate to be treated or an object which in use has a substantially known temperature relation to the substrate to be treated, wherein the measuring object comprises a surface having at least one surface area, which acts as a measuring surface for an optical temperature measurement. A predetermined structure in the form of a plurality of recessions is formed in the surface area, in order to influence the emissivity of the surface area.

Abstract: A retainer has a coating composed of silicon carbide, glassy carbon or pyrolytic carbon on its surface. A method for producing the retainer and the use of the retainer in a plasma-driven vapor deposition are also provided.

Abstract: A continuous vacuum system for processing substrates has an inlet air lock, an outlet air lock, at least one process chamber, and a device for conveying the substrates through the continuous system. To create a continuous system having a compact design and high throughput for plasma-enhanced treatment of substrates at a reduced pressure, which ensures a simple, rapid and secure handling of the substrates with a high capacity of the substrate carrier, the conveying device has at least one plasma boat in which the substrates are arranged on a base plate in a three-dimensional stack in at least one plane at a predefined distance from one another with intermediate carriers in between. At least the intermediate carriers are made of graphite or another suitable electrically conductive material and can be acted upon electrically with an alternating voltage via an electric connection.

Abstract: The present invention is directed to an apparatus and process for locally heating and/or cooling of semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a device for heating or cooling localized regions of a wafer to control the temperature of such regions during one or more stages of a heat cycle. In one embodiment, gas nozzles eject gas towards the bottom of the wafer to provide localized temperature control. In another embodiment, a transparent gas pipe containing a variety of gas outlets distributes gas onto the top surface of the wafer to provide localized temperature control.

Abstract: The invention relates to a device and a method for the heat treatment of substrates, especially semiconductor wafers. The device comprises a reaction chamber with a compensation element. According to the invention the substrate can be inserted and withdrawn again more easily by the fact that the compensation element (15) can be at least partly lowered and/or raised in the reaction chamber.

Abstract: Air bearings support a rotating wafer carrying base in an RTP system. The base in proximity to the air bearing is protected from warping due to absorption of radiation from the hot wafer being treated. The most preferred embodiment splits the base into an inner disk carrying the wafer and an outer ring, where the inner ring which absorbs the most energy contacts and is supported at three points by the outer disk which is supported by the air bearing.

Abstract: An apparatus for preventing warping of a rotatable base for supporting an object being processed in a Rapid Thermal Processing (RTP) system due to non uniform heating of the base by radiation from the object being processed is disclosed.

Abstract: An apparatus, method, and system for Rapid Thermal Processing (RTP), whereby the object to be processed is rotated under the radiation sources of the RTP system by a gas jet system, is presented.

Abstract: A rapid thermal processing (RTP) chamber is disclosed, wherein a transparent plate and a body are sealed with a gas tight seal, and wherein the gas tight seal is activated by inflating an inflatable element.