Abstract: A memory module includes a printed circuit board having a lateral contact portion and a plurality of memory chips being electrically coupled to the printed circuit board and arranged side-by-side at least one printed circuit board assembly side. An encapsulating-covering element is formed on the printed circuit board at the at least one printed circuit board assembly side. Furthermore, the plurality of memory chips are embedded in the encapsulating-covering element.

Abstract: A proper functioning of an integrated circuit is monitored by monitoring a supply voltage of the integrated circuit. Dips in the supply voltage are ascertained. A signaling of the dips in the supply voltage is only effected if the supply voltage falls below a given voltage for a given minimum duration. As a result, the reliability of the integrated circuit is increased.

Abstract: A circuit configuration for a programmable nonvolatile memory having memory cells organized in rows and columns, includes a programming circuit which contains a first device for testing purposes that applies a programming current to a first predetermined number of memory cells in parallel for a first predetermined time period. During a second predetermined time period, the device thereupon connects a second predetermined number, which is greater than the first number, in parallel an applies the programming current to them. A method is provided for operating the circuit configuration.

Abstract: A redundant circuit configuration for an integrated semiconductor memory has normal and redundant memory cells, in which addresses of arbitrary groups of memory cells of the memory are formed from a first partial address and a second partial address. M fixedly programmable address circuits, where M.gtoreq.1, are each assigned to one of the first partial addresses. Each fixedly programmable address circuit in an activated state has the second partial address of a group of normal memory cells to be replaced and has a first output at which an activation signal is applied in the activated state of the address circuit if the first partial address applied to the circuit configuration matches the first partial address assigned to the address circuit. One address comparator is common to all of the address circuits and has a first output.

Abstract: A circuit array for amplifying and holding data with different supply voltages includes a first flip-flop being constructed in MOS technology for receiving a low supply voltage and data with a low supply voltage. The first flip-flop has output terminals. A second flip-flop being constructed in MOS technology receives a high supply voltage. The second flip-flop has a load segment and output terminals. At least one additional MOS transistor is connected in series with each of the output terminals of the second flip-flop between the load segment and ground. The at least one additional MOS transistor each has a gate terminal being connected to a respective one of the output terminals of the first flip-flip. A device for activating the first and second flip-flops is triggered for amplifying and holding the data to activate the first flip-flop and to activate the second flip-flop after a time delay.

Abstract: A column redundance circuit configuration for a memory includes a memory blocks with memory cells disposed in x lines and y columns. Redundant memory cells are disposed in b lines and c columns. A column decoder and c redundant column decoders are provided. Each column decoder is assigned to a respective one of the c redundant columns of each of the memory blocks. D encoding elements each have an address decoding device for assigning it to an arbitrary memory block.

Abstract: A CMOS input stage for operation with a supply voltage selectively having a first value or a second higher value, includes a supply voltage terminal selectively receiving a first value or a second value of a supply voltage during operation, a reference potential terminal, and an input terminal. A first field effect transistor of a first conduction type has a load path and a gate terminal, and a second field effect transistor of a second conduction type has a load path and a gate terminal. The load paths of the field effect transistors are connected in series between the supply voltage terminal and the reference potential terminal. The gate terminals of the field effect transistors are connected to the input terminal. A control device adjusts a resistance of the load path of at least one of the field effect transistors as a function of a particular value selected for the supply voltage.

Abstract: In a method for data transfer between a plurality of memory cells and at least one input/output terminal of a semiconductor memory, and a semiconductor memory for carrying out the method, a memory cell address is defined by a control signal for a data transfer. A data transfer operation from or to the memory cells is controlled with an address control signal and an output enable control signal for defining a memory cell address with one of the two signals. A data transfer operation is subsequently initiated at a given logical linkage of the two control signals. An ensuing data transfer is controlled with the other of the two control signals.