Abstract: Technologies for a micro-concentrator modular array. The micro-concentrator modular array may include two or more micro-concentrator solar modules. One or more of the micro-concentrator solar modules may be removable from the micro-concentrator modular array. Micro-concentrator solar modules may be added to a micro-concentrator modular array. One or more of the micro-concentrator solar modules may be electrically and/or mechanically connected to other micro-concentrator solar modules. To facilitate an electrical connection, a conductive connector may be used to connect an electrical output of one micro-concentrator solar module with an electrical input of another micro-concentrator solar module.

Abstract: Technologies for a micro-concentrator modular array. The micro-concentrator modular array may include two or more micro-concentrator solar modules. One or more of the micro-concentrator solar modules may be removable from the micro-concentrator modular array. Micro-concentrator solar modules may be added to a micro-concentrator modular array. One or more of the micro-concentrator solar modules may be electrically and/or mechanically connected to other micro-concentrator solar modules. To facilitate an electrical connection, a conductive connector may be used to connect an electrical output of one micro-concentrator solar module with an electrical input of another micro-concentrator solar module.

Abstract: Laser power conversion with multiple stacked junctions or subcells are disclosed to produce increased output. Both vertical and horizontal integration are disclosed for flexible, efficient, and cost-effective laser power conversion. One embodiment of a laser power converter includes at least a first or top subcell that receives incident laser light, a second subcell below the first subcell that subsequently receives the laser light, and a tunnel junction between the first and second subcells.

Abstract: A semiconductor device having at least one layer of a group III-V semiconductor material epitaxially deposited on a group III-V nucleation layer adjacent to a germanium substrate. By introducing electrical contacts on one or more layers of the semiconductor device, various optoelectronic and microelectronic circuits may be formed on the semiconductor device having similar quality to conventional group III-V substrates at a substantial cost savings. Alternatively, an active germanium device layer having electrical contacts may be introduced to a portion of the germanium substrate to form an optoelectronic integrated circuit or a dual optoelectronic and microelectronic device on a germanium substrate depending on whether the electrical contacts are coupled with electrical contacts on the germanium substrate and epitaxial layers, thereby increase the functionality of the semiconductor devices.

Abstract: A diffused junction semiconductor (12) for detecting light (48) at a predetermined wavelength is provided including a base (30) and an epitaxial structure (32) electrically coupled to the base (30). The epitaxial structure (32) forms a p-n junction (38) in the base (30). The epitaxial structure (32) includes at least one diffusion layer (50) electrically coupled to the base (30). At least one of the diffusion layers (50) contributes impurities in at least a portion of the base (30) to form the p-n junction (38) during growth of the epitaxial structure (32). A method for performing the same is also provided.

Abstract: ABSTRACT A diffused junction semiconductor (12) for detecting light (48) at a predetermined wavelength is provided including a base (30) and an epitaxial structure (32) electrically coupled to the base (30). The epitaxial structure (32) forms a p-n junction (38) in the base (30). The epitaxial structure (32) includes at least one diffusion layer (50) electrically coupled to the base (30). At least one of the diffusion layers (50) contributes impurities in at least a portion of the base (30) to form the p-n junction (38) during growth of the epitaxial structure (32). A method for performing the same is also provided.

Abstract: A semiconductor device having at least one layer of a group III-V semiconductor material epitaxially deposited on a group III-V nucleation layer adjacent to a germanium substrate. By introducing electrical contacts on one or more layers of the semiconductor device, various optoelectronic and microelectronic circuits may be formed on the semiconductor device having similar quality to conventional group III-V substrates at a substantial cost savings. Alternatively, an active germanium device layer having electrical contacts may be introduced to a portion of the germanium substrate to form an optoelectronic integrated circuit or a dual optoelectronic and microelectronic device on a germanium substrate depending on whether the electrical contacts are coupled with electrical contacts on the germanium substrate and epitaxial layers, thereby increase the functionality of the semiconductor devices.