Abstract: Methods, apparatus, systems, and articles of manufacture are disclosed to improve modeling efficiency identify a first quantity of modes corresponding to a task, apply a model to the first quantity of modes to determine a first contributory effect corresponding to the task, select a first portion of the first quantity of modes to exclude to generate a second quantity of modes corresponding to the task, apply the model to the second quantity of modes to determine a second contributory effect corresponding to the task, and cause a trigger response based on a difference value between the first contributory effect and the second contributory effect.

Abstract: A system and a method are disclosed for an system that includes a computer with a display unit running the client application software with attached plurality of capture devices for recording audio, video and snapshot (video or computer display monitor) content. A computer keyboard or a tablet is used to control the recording or snapshot of the dynamic classroom content. The client computer may be placed in a classroom and is connected via a network (Internet or LAN/WAN) to a server computer for publishing or remotely storing a “primitive” data session. The client software allows the authorized student or instructor to add additional static content, edit the consolidated content and publish the “primitive” or “organized” data session, which results in enhanced, collaborative content development.

Abstract: In a dynamic MOS (Metal Oxide Semiconductor) random access memory, reverse bias leakage currents which deplete stored charges are reduced by minimizing minority carrier generation-type currents. By so minimizing these currents, the leakage currents become dominated by minority carrier diffusion currents. The memory is ideally formed in an upper semiconductor layer (14) of a layered structure (11). The semiconductor layer (14) is grown epitaxially with a relatively low dopant concentration on a semiconductor substrate (12) with a dopant concentration of the same conductivity type and about three orders of magnitude greater than that of the epitaxially grown layer. The epitaxially grown structure is advantageously suited for the memory circuits in that it may be formed with very low leakage currents. The material further offers by its layered structure a basis for optimizing dynamic memory device characteristics.