Patents by Inventor Ding-Shuo WANG

Ding-Shuo WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin-orbit torque magnetic random access memory and method of writing the same
    Patent number: 9666256
    Abstract: An SOT-MRAM comprises a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer. The magnetic free layer includes a first metal film exhibiting ferromagnetic characteristics, and a second metal film for generating a spin-Hall effect. The first metal film has a thickness sufficient to allow the magnetic free layer, after being applied with a first external magnetic field which is subsequently removed, to have a magnetization ratio ranging from ?0.9 to 0.9. The first metal film, upon being applied with a second external magnetic field and an electric pulse, has multiple magnetic domains when a current density resulting from the electric pulse is greater than a critical value.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: May 30, 2017
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chih-Huang Lai, Kuo-Feng Huang, Hsiu-Hau Lin, Ding-Shuo Wang, Ming-Han Tsai
  • Magnetic electronic device and manufacturing method thereof
    Patent number: 9466786
    Abstract: A magnetic electronic device comprises a substrate, a first buffer layer, a first CoFeB layer, a first metal oxidation layer, a second buffer and a capping layer. The first buffer layer is disposed on the substrate. The first CoFeB layer is disposed on the first buffer layer. The first metal oxidation layer is disposed on the first CoFeB layer. The second buffer is disposed on the first metal oxidation layer, and the material of the second buffer layer includes platinum, palladium, tantalum or their any combination. The capping layer disposed on the second buffer. A manufacturing method of the magnetic electronic device is also disclosed.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: October 11, 2016
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chih-Huang Lai, Ding-Shuo Wang
  • MAGNETIC ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20150325784
    Abstract: A magnetic electronic device comprises a substrate, a first buffer layer, a first CoFeB layer, a first metal oxidation layer, a second buffer and a capping layer. The first buffer layer is disposed on the substrate. The first CoFeB layer is disposed on the first buffer layer. The first metal oxidation layer is disposed on the first CoFeB layer. The second buffer is disposed on the first metal oxidation layer, and the material of the second buffer layer includes platinum, palladium, tantalum or their any combination. The capping layer disposed on the second buffer. A manufacturing method of the magnetic electronic device is also disclosed.
    Type: Application
    Filed: July 23, 2015
    Publication date: November 12, 2015
    Inventors: Chih-Huang LAI, Ding-Shuo WANG
  • Magnetic electronic device
    Patent number: 9123887
    Abstract: A magnetic electronic device comprises a substrate, a buffer layer, a first CoFeB layer, a first metal oxidation layer and a capping layer. The buffer layer is disposed above the substrate. The first CoFeB layer is disposed above the buffer layer. The first metal oxidation layer is disposed above the first CoFeB layer. The capping layer is disposed above the first metal oxidation layer and covers the first metal oxidation layer. A manufacturing method of the magnetic electronic device is also disclosed.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: September 1, 2015
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Chih-Huang Lai, Ding-Shuo Wang
  • MAGNETIC ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20140252515
    Abstract: A magnetic electronic device comprises a substrate, a buffer layer, a first CoFeB layer, a first metal oxidation layer and a capping layer. The buffer layer is disposed above the substrate. The first CoFeB layer is disposed above the buffer layer. The first metal oxidation layer is disposed above the first CoFeB layer. The capping layer is disposed above the first metal oxidation layer and covers the first metal oxidation layer. A manufacturing method of the magnetic electronic device is also disclosed.
    Type: Application
    Filed: October 25, 2013
    Publication date: September 11, 2014
    Applicant: National Tsing Hua University
    Inventors: Chih-Huang LAI, Ding-Shuo WANG