Abstract: The invention relates to a method for measuring a photomask for semiconductor lithography, including the following steps: recording an aerial image of at least one region of the photomask, defining at least one region of interest, ascertaining structure edges in at least one region of interest, providing desired structures to be produced by the photomask, adapting the ascertained structure edges to the desired structures, and displacing the adapted structure edges by means of the results of a separate registration measurement.

Abstract: The invention relates to a method for measuring a photomask for semiconductor lithography, including the following steps: recording an aerial image of at least one region of the photomask, defining at least one region of interest, ascertaining structure edges in at least one region of interest, providing desired structures to be produced by the photomask, adapting the ascertained structure edges to the desired structures, and displacing the adapted structure edges by means of the results of a separate registration measurement.

Abstract: A pattern inspection apparatus includes: an optical image acquiring mechanism to acquire optical image data of a corresponding divided pattern for each of masks for multiple patterning has been formed; a position deviation map generating processing circuitry to generate position deviation maps regarding the corresponding divided pattern; a difference position value map generating processing circuitry to generate one difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps; a region specifying processing circuitry to specify at least one region having the difference value exceeding a threshold of distance between patterns laying side-by-side by using the difference position value map; and an output mechanism to output at least coordinates, a type of defect, and information of a reference image of each region specified for the each region specified.

Abstract: A pattern inspection apparatus includes: an optical image acquiring mechanism to acquire optical image data of a corresponding divided pattern for each of masks for multiple patterning has been formed; a position deviation map generating processing circuitry to generate position deviation maps regarding the corresponding divided pattern; a difference position value map generating processing circuitry to generate one difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps; a region specifying processing circuitry to specify at least one region having the difference value exceeding a threshold of distance between patterns laying side-by-side by using the difference position value map; and an output mechanism to output at least coordinates, a type of defect, and information of a reference image of each region specified for the each region specified.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: A computer implemented system and process to determine a model for a domain includes identifying a schema that defines a possible causal element of a particular type of behavior. One or more concepts are determined, as well as one or more sub-concepts for each concept, where each concept and sub-concept are associated with a logical relationship. Multiple models are determined from the one or more concepts and the one or more sub-concepts. The multiple models may be calibrated using representative data collected from a real-world source. An optimal model is determined amongst a plurality of calibrated models.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.

Abstract: A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: A method and system of workforce related resource planning is disclosed. The method includes receiving workforce related resource data wherein the workforce related resource data includes demand data and supply data, disaggregating the demand data and the supply data and creating a probability distribution of a workforce gap between the demand data and supply data to quantify risk associated with workforce related resource planning.

Abstract: A method of managing product end of life over an end of life horizon includes the step of selecting an objective of either maximizing gross profit or minimizing writeoff costs for a selected plurality of products being discontinued. The products may have parts in common. A subset of all possible combinations of product demand levels is selected. Each combination is associated with a probability. A procurement plan that optimizes the selected objective is generated based on the selected subset of demand levels given a non-zero pre-existing inventory of at least some parts of the selected products.

Abstract: The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.

Abstract: An embodiment of a method of scheduling computer processing begins with a first step of receiving job properties for a plurality of jobs to be processed in a multi-processor computing environment. At least some of the jobs each comprise a plurality of stages, one or more tasks for each stage, and precedence constraints among the stages. The method continues with a second step of determining a schedule for processing at least a subset of the plurality of jobs on processors within the multi-processor computing environment from a solution of a mathematical program that provides a near maximal completion reward. The schedule comprises a sequence of tasks for each processor. In a third step, the computer processing jobs are processed on the processors according to the sequence of tasks for each processor.

Abstract: A method for correcting errors on a wafer processed by a photolithographic mask at a wafer processing site is provided. The method comprises measuring errors on the wafer, and modifying a pattern placement on the photolithographic mask by locally applying femtosecond light pulses of a laser system to the photolithographic mask at the wafer processing site.

Abstract: Systems and methods for detecting an interesting event in a data stream. More specifically, a monitoring system is configured to monitor a data stream and establish a sensitivity parameter based on sequences generated from values in a first portion of the data stream. A detector may be trained using the sensitivity parameter to detect the occurrence of an interesting event in the data stream.

Abstract: A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.

Abstract: An embodiment of a method of dispatching tasks in a multi-processor computing environment begins with a step of a dispatcher within the multi-processor computing environment receiving job properties for a plurality of jobs to be processed in the multi-processor computing environment. Each job comprises at least one task. In a second step, the dispatcher employs an initial dispatching rule to assign an initial subset of tasks to processors within the multi-processor computing environment. The method continues with a third step of the dispatcher monitoring system status of the multi-processor computing environment. In a fourth step, the dispatcher selects a second dispatching rule from a plurality of dispatching rules in response to a change in the system status. In a fifth step, the dispatcher employs the second dispatching rule to assign a second subset of tasks to the processors.

Abstract: In at least some embodiments, a method comprises computing an initial schedule of jobs to be run on a computing system using a mathematical program and monitoring the computing system. The method also comprises, based on the monitoring, determining, using the mathematical program used to compute the initial schedule, whether the initial schedule should be re-computed.