Patents by Inventor Dirk Dantz
Dirk Dantz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7803695Abstract: A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material: a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material, b) joining the surface of the donor wafer containing recesses to the carrier wafer, c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, and d) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.Type: GrantFiled: November 13, 2008Date of Patent: September 28, 2010Assignee: Siltronic AGInventors: Dirk Dantz, Andreas Huber, Reinhold Wahlich, Brian Murphy
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Publication number: 20090065891Abstract: A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material: a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material, b) joining the surface of the donor wafer containing recesses to the carrier wafer, c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, and d) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.Type: ApplicationFiled: November 13, 2008Publication date: March 12, 2009Applicant: Siltronic AGInventors: Dirk Dantz, Andreas Huber, Reinhold Wahlich, Brian Murphy
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Patent number: 7491966Abstract: A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material: a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material, b) joining the surface of the donor wafer containing recesses to the carrier wafer, c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, and d) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.Type: GrantFiled: June 21, 2005Date of Patent: February 17, 2009Assignee: Siltronic AGInventors: Dirk Dantz, Andreas Huber, Reinhold Wahlich, Brian Murphy
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Publication number: 20080210155Abstract: A silicon single crystal which has been produced using the Czochralski method has a <113> orientation.Type: ApplicationFiled: February 28, 2008Publication date: September 4, 2008Applicant: SILTRONIC AGInventors: Dirk Dantz, Wilfried Von Ammon, Dirk Zemke, Franz Segieth
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Publication number: 20070281441Abstract: A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.Type: ApplicationFiled: July 10, 2007Publication date: December 6, 2007Applicant: SILTRONIC AGInventors: Dirk Dantz, Andreas Huber, Reinhold Wahlich, Brian Murphy
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Patent number: 7279700Abstract: A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.Type: GrantFiled: November 3, 2005Date of Patent: October 9, 2007Assignee: Siltronic AGInventors: Dirk Dantz, Andreas Huber, Reinhold Wahlich, Brian Murphy
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Patent number: 7122865Abstract: An SOI wafer, includes a substrate made from silicon, an electrically insulating layer with a thermal conductivity of at least 1.6 W/(Km) and a single-crystal silicon layer with a thickness of from 10 nm to 10 ?m, a standard deviation of at most 5% from the mean layer thickness and a density of at most 0.5 HF defects/cm2. A process is for producing an SOI wafer of this type, in which a substrate wafer made from silicon is joined to a donor wafer via a layer of the electrically insulating material which has previously been applied. The donor wafer bears a donor layer of single-crystal silicon, with a concentration of vacancies of at most 1012/cm3 and of vacancy agglomerates of at most 105/cm3. After the wafers have been joined, the thickness of the donor wafer is reduced in such a manner that the single-crystal silicon layer having these properties is formed from the donor layer, this single-crystal silicon layer being joined to the substrate wafer via the layer of electrically insulating material.Type: GrantFiled: May 25, 2004Date of Patent: October 17, 2006Assignee: Siltronic AGInventors: Robert Hölzl, Dirk Dantz, Andreas Huber, Ulrich Lambert, Reinhold Wahlich
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Publication number: 20060145188Abstract: A semiconductor wafer has a monocrystalline silicon layer and a graded silicon-germanium layer adjacent thereto, of thickness d and composition Si1-xGex, where x represents the proportion of germanium and 0<x?1, and where x assumes greater values with increasing distance a from the monocrystalline silicon layer, wherein the relationship between the proportion x(d) of germanium at the surface of the graded silicon-germanium layer and the proportion x(d/2) of germanium at the center distance between the monocrystalline silicon layer and the surface of the graded silicon-germanium layer is x(d/2)>0.5·x(d). The wafer may be further processed, in which process a layer of the semiconductor wafer is transferred to a substrate wafer.Type: ApplicationFiled: January 3, 2006Publication date: July 6, 2006Applicant: Siltronic AGInventors: Dirk Dantz, Andreas Huber, Reinhold Wahlich
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Publication number: 20060138540Abstract: The invention relates to a semiconductor wafer, which, at its surface comprises a semiconductor surface layer with a thickness in the range from 3 nm to 200 nm having no hole defects, and which comprises an adjoining electrically insulating layer beneath the semiconductor surface layer.Type: ApplicationFiled: December 21, 2005Publication date: June 29, 2006Applicant: Siltronic AGInventors: Dirk Dantz, Andreas Huber, Brian Murphy, Reinhold Wahlich
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Publication number: 20060097317Abstract: A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.Type: ApplicationFiled: November 3, 2005Publication date: May 11, 2006Applicant: Siltronic AGInventors: Dirk Dantz, Andreas Huber, Reinhold Wahlich, Brian Murphy
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Publication number: 20050287767Abstract: A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material: a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material, b) joining the surface of the donor wafer containing recesses to the carrier wafer, c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, and d) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.Type: ApplicationFiled: June 21, 2005Publication date: December 29, 2005Inventors: Dirk Dantz, Andreas Huber, Reinhold Wahlich, Brian Murphy
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Publication number: 20040251500Abstract: An SOI wafer, includes a substrate made from silicon, an electrically insulating layer with a thermal conductivity of at least 1.6 W/(Km) and a single-crystal silicon layer with a thickness of from 10 nm to 10 &mgr;m, a standard deviation of at most 5% from the mean layer thickness and a density of at most 0.5 HF defects/cm2.Type: ApplicationFiled: May 25, 2004Publication date: December 16, 2004Applicant: SILTRONIC AGInventors: Robert Holzl, Dirk Dantz, Andreas Huber, Ulrich Lambert, Reinhold Wahlich
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Patent number: 6656400Abstract: A method for producing a pleated filter material from a nonwoven fabric having spacers for the pleated folds formed from the filter material itself, a formed fabric made of stretched synthetic fibers and thermoplastic and/or thermally cross-linked binding agent being heated in an oven to a temperature lying at least in the softening temperature range and/or the cross-linking temperature range of the binding agent, and subsequently, the formed fabric being formed between profiled calender rolls and cooled simultaneously.Type: GrantFiled: March 28, 2001Date of Patent: December 2, 2003Assignee: Firma Carl FreudenbergInventors: Klaus Veeser, Anthony Hollingsworth, Dirk Dantz
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Publication number: 20030145780Abstract: A silicon single crystal which has been produced using the Czochralski method has a <113 > orientation.Type: ApplicationFiled: January 27, 2003Publication date: August 7, 2003Applicant: WACKER SILTRONIC AGInventors: Dirk Dantz, Wilfried Von Ammon, Dirk Zemke, Franz Segieth
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Patent number: 6527834Abstract: A filter made of nonwoven fabric, paper or the like for gaseous media, having an electrically conductive coating made of a conductive substance of pulverizable materials, in particular from electrically conductive carbon-black particles and/or powdery metal particles or other pulverized materials, the carbon-black particles or metal particles being fixed to the filter fibers with the aid of binding agents, and the conductive coating being applied in a reticulated manner on the filtering layer.Type: GrantFiled: November 12, 1999Date of Patent: March 4, 2003Assignee: Firma Carl FreudenbergInventors: Kurt Jörder, Klaus Veeser, Mathias Pudleiner, Dirk Dantz
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Publication number: 20010050136Abstract: A method for producing a pleated filter material from a nonwoven fabric having spacers for the pleated folds formed from the filter material itself, a formed fabric made of stretched synthetic fibers and thermoplastic and/or thermally cross-linked binding agent being heated in an oven to a temperature lying at least in the softening temperature range and/or the cross-linking temperature range of the binding agent, and subsequently, the formed fabric being formed between profiled calender rolls and cooled simultaneously.Type: ApplicationFiled: March 28, 2001Publication date: December 13, 2001Inventors: Klaus Veeser, Anthony Hollingsworth, Dirk Dantz