Abstract: An apparatus and method for forming an electronic device (110) including an antenna (212) coupled to circuitry (216, 218) for conducting signals in the radio frequency range and a housing (120, 300, 400, 600, 700) encasing the circuitry (216, 218) and the antenna (212). The housing (120, 300, 400, 600, 700) includes a coating material (314, 604, 704) overlying a substrate (312, 602, 702), the coating material (314, 604, 704) being substantially non-conducting and including a metal having a ten percent atomic weight of the combined non-conducting material and the metal. The housing (120, 300, 400, 600, 700) minimally attenuates signals in the radio frequency range and provides a metallic appearance to reflected light in the visible range.

Abstract: An electronic device (110, 210) includes a housing (120) encasing a component (112, 114). The housing (120) includes a region (300, 600, 800, 1000) contiguous to the component (112, 114), the region (300, 600, 800, 1000) configured to selectively switch between a metallic appearance to transparent to reveal the component (112, 114) through the region (300, 600, 800, 1000) when transparent. Metal surfaces, metal particles, or shiny particles that are incorporated into device structures may be actuated. The grain sizes of the particles can be adjusted to achieve the desired reflections. In addition, individual shutters (318, 618, 818, 1018) can be fabricated with a distribution of predisposed orientations to enhance the reflectivity.

Abstract: A method is provided for preventing electron emission from a sidewall (34) of a gate electrode (20) and the edge (28) of the gate electrode stack of a field emission device (10), the gate electrode (20) having a surface (24) distally disposed from an anode (40) and a side (26) proximate to emission electrodes (38). The method comprises growing dielectric material (22) over the surface (24) and side (26) of the gate electrode (20), and performing an anisotropic etch (32) normal to the surface (24) to remove the dielectric material (22) from the surface (24) and leaving at least a portion of the dielectric material (22) on the side (26) of the gate electrode (20) and edge (28) of the gate electrode stack.

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The growth of the monocrystalline oxide film for accommodating buffer layer (24) is achieved through an automated oxygen delivery system (200) that controls a variety of oxygen control parameters, such as pressure control, ramp control, and flow control. The oxygen delivery system (200) is preferably a dual stage pressure control system (204, 206) with the ability to precisely control the oxygen profile in the growth chamber.