Patents by Inventor Dirk Priefert
Dirk Priefert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923839Abstract: A gate driver device includes a first field effect transistor and a first driver circuit. The first field effect transistor includes a first gate electrode and a first backgate structure. The first driver circuit supplies a first backgate drive signal to the first backgate structure.Type: GrantFiled: July 27, 2022Date of Patent: March 5, 2024Assignee: Infineon Technologies Austria AGInventors: Dirk Priefert, Matteo Albertini, Remigiusz Viktor Boguszewicz
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Publication number: 20230261040Abstract: A semiconductor device includes a substrate layer having a floating base region of a first conductivity type. A first well of a second conductivity type and the floating base region form a first pn junction. A first conductive structure is electrically connected to the first well. A barrier region of the second conductivity type and the floating base region form an auxiliary pn junction. A second conductive structure is electrically connected to the floating base region through a rectifying structure. A pull-down structure is configured to produce a voltage drop between the barrier region and the second conductive structure, when charge carriers cross the auxiliary pn junction.Type: ApplicationFiled: February 16, 2023Publication date: August 17, 2023Inventors: Christian Schippel, Dirk Priefert, Felix Simon Winterer, Remigiusz Viktor Boguszewicz
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Publication number: 20230238459Abstract: A semiconductor device includes a semiconductor layer, an electronic element and laterally separated trench isolation structures. The semiconductor layer includes an element region having an inner region, an outer region on opposite sides of the inner region, and a transition region that laterally separates the inner region and the outer region. The electronic element includes a first doped region formed in the inner region and a second doped region formed in the outer region. The trench isolation structures are formed at least in the transition region. Each trench isolation structure extends from a first surface of the semiconductor layer into the semiconductor layer.Type: ApplicationFiled: January 20, 2023Publication date: July 27, 2023Inventors: Lars Müller-Meskamp, Ralf Rudolf, Annett Winzer, Christian Schippel, Thomas Künzig, Dirk Priefert
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Publication number: 20230140348Abstract: A semiconductor device includes a semiconductor layer with an inner portion, an outer portion laterally surrounding the inner portion, and a transition portion laterally surrounding the inner portion and separating the inner portion and the outer portion. A first electric element includes a first doped region formed in the inner portion and a second doped region formed in the outer portion. The first electric element is configured to at least temporarily block a voltage applied between the first doped region and the second doped region. A trench isolation structure extends from a first surface into the semiconductor layer and segments at least one of the inner portion, the transition portion, and the outer portion.Type: ApplicationFiled: October 21, 2022Publication date: May 4, 2023Inventors: Lars Müller-Meskamp, Ralf Rudolf, Dirk Priefert, Annett Winzer, Thomas Künzig, Christian Schippel
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Publication number: 20230039922Abstract: A gate driver device includes a first field effect transistor and a first driver circuit. The first field effect transistor includes a first gate electrode and a first backgate structure. The first driver circuit supplies a first backgate drive signal to the first backgate structure.Type: ApplicationFiled: July 27, 2022Publication date: February 9, 2023Inventors: Dirk Priefert, Matteo Albertini, Remigiusz Viktor Boguszewicz
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Publication number: 20170084606Abstract: An integrated circuit includes a semiconductor body with a first semiconductor layer, an insulation layer on the first semiconductor layer, and a second semiconductor layer on the insulation layer. The integrated circuit further includes a plurality of transistors each including a load path and a control node The load paths are connected in series, and the plurality of transistors are at least partially integrated in the second semiconductor layer. A voltage limiting structure is connected in parallel with the load path of one of the plurality of transistors, wherein the voltage limiting structure is integrated in the first semiconductor layer and is connected to the one of the plurality of transistors through two electrically conducting vias extending through the insulation layer.Type: ApplicationFiled: September 22, 2016Publication date: March 23, 2017Inventors: Andreas Meiser, Dirk Priefert, Rolf Weis
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Patent number: 9054618Abstract: A power supply circuit can be used to provide an alternating-current supply voltage to an electric motor. The power supply circuit is supplied by line power. The power supply circuit includes a inverter including at least one pair of transistor for generating a corresponding phase of the plurality of power supply phases. The inverter includes a transistor control circuit for switching the low-side transistor to its conducting state and the high-side transistor to its non-conducting state in case an excess voltage is detected at the input of the inverter.Type: GrantFiled: December 18, 2012Date of Patent: June 9, 2015Assignee: Infineon Technologies Austria AGInventors: Wolfgang Frank, Remigiusz Viktor Boguszewicz, Dirk Priefert
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Publication number: 20140167665Abstract: A power supply circuit can be used to provide an alternating-current supply voltage to an electric motor. The power supply circuit is supplied by line power. The power supply circuit includes a inverter including at least one pair of transistor for generating a corresponding phase of the plurality of power supply phases. The inverter includes a transistor control circuit for switching the low-side transistor to its conducting state and the high-side transistor to its non-conducting state in case an excess voltage is detected at the input of the inverter.Type: ApplicationFiled: December 18, 2012Publication date: June 19, 2014Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Wolfgang Frank, Remigiusz Viktor Boguszewicz, Dirk Priefert
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Patent number: 7554157Abstract: An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the dielectric layer. The semiconductor layer includes a drift zone of a first conduction type, a junction between the drift zone and a further component zone which is configured in such a way that a space charge zone is formed in the drift zone when a reverse voltage is applied to the junction, and a terminal zone adjacent to the drift zone. A first terminal electrode is connected to the further component zone, and a second terminal electrode is connected to the terminal zone. In the semiconductor substrate a first semiconductor zone is doped complementarily with respect to a basic doping of the semiconductor substrate, and the first terminal electrode is connected to the first semiconductor zone. A rectifier element is connected between the first terminal electrode and the first semiconductor zone.Type: GrantFiled: September 26, 2006Date of Patent: June 30, 2009Assignee: Infineon Technologies Austria AGInventors: Uwe Wahl, Ralf Rudolf, Dirk Priefert
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Publication number: 20070080395Abstract: An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the dielectric layer. The semiconductor layer includes a drift zone of a first conduction type, a junction between the drift zone and a further component zone which is configured in such a way that a space charge zone is formed in the drift zone when a reverse voltage is applied to the junction, and a terminal zone adjacent to the drift zone. A first terminal electrode is connected to the further component zone, and a second terminal electrode is connected to the terminal zone. In the semiconductor substrate a first semiconductor zone is doped complementarily with respect to a basic doping of the semiconductor substrate, and the first terminal electrode is connected to the first semiconductor zone. A rectifier element is connected between the first terminal electrode and the first semiconductor zone.Type: ApplicationFiled: September 26, 2006Publication date: April 12, 2007Applicant: Infineon Technologies Austria AGInventors: Uwe Wahl, Ralf Rudolf, Dirk Priefert
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Patent number: 6693327Abstract: A lateral semiconductor element (10) in thin-film SOI technology comprises an insulator layer (14) which rests on a substrate (12) and is buried under a thin silicon film (16), on top of which the source, or anode, contact (18) and the drain, or cathode, contact (22) are mounted. The anode contact (18) and the cathode contact (22) each lie over separate shield regions (28,30) within substrate (12), with the anode contact (18) being electrically connected with substrate (12).Type: GrantFiled: February 12, 2002Date of Patent: February 17, 2004Assignee: EUPEC Europaische Gesellschaft fur Leistungshalbleiter mbHInventors: Dirk Priefert, Ralf Rudolf, Viktor Boguszewicz, Frank Michalzik, Rolf Buckhorst
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Publication number: 20020121664Abstract: A lateral semiconductor element (10) in thin-film SOI technology comprises an insulator layer (14) which rests on a substrate (12) and is buried under a thin silicon film (16), on top of which the source, or anode, contact (18) and the drain, or cathode, contact (22b) are mounted. The anode contact (18) and the cathode contact (22) each lie over separate shield regions (28,30) within substrate (12), with the anode contact (18) being electrically connected with substrate (12).Type: ApplicationFiled: February 12, 2002Publication date: September 5, 2002Applicant: Hanning Elektro-Werke GmbH & Co. KGInventors: Dirk Priefert, Ralf Rudolf, Viktor Boguszewicz, Frank Michalzik, Rolf Buckhorst