Abstract: Shielding arrangements for transformer structures capable for operation in high frequency and high power density applications are disclosed. Electric shields may be incorporated within transformers to shield and/or redirect high strength electric fields away from areas of insulation material that may be prone to failure mechanisms. Such electric shields may be positioned between primary and secondary windings in order to be coupled with electric potentials of the windings. The electric shield may comprise a laminate structure that includes one or more metal layers and one or more dielectric layers, for example a printed circuit board. By positioning the electric shields in this manner, high electric fields associated with solid state transformer applications may be concentrated within planes of the electric shields and diverted away from potential problem areas, for example areas that are close to the windings where voids in the insulation material may otherwise promote failure mechanisms.

Abstract: This disclosure describes systems, methods, and apparatus for controlling ion energy in a plasma processing chamber. In particular, a system for plasma processing includes a plasma processing chamber, a plasma source coupled to the plasma processing chamber, a plasma power supply coupled to the plasma source that is configured to apply power to the plasma processing chamber in periodic pulse envelopes to control a density of a plasma in the plasma processing chamber, and a support within the plasma processing chamber to support a substrate. A bias supply is configured to provide a modified periodic voltage function to the substrate support within each of the periodic pulse envelopes to control an energy of ions impacting the substrate support in the plasma processing chamber.

Abstract: This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.

Abstract: This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.

Abstract: This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.

Abstract: There is provided by this invention an apparatus and method for generating voltage pulses to first and second magnetron devices in a plasma chamber. An isolation transformer is connected to a pulsed DC power supply having a flux sensor, such as a Hall effect sensor, in close proximity to its air gap to monitor the transformer flux. A control circuit is connected to the flux sensor to control the duty cycle of the transformer by controlling the flux of the transformer such that the maximum and minimum peak transformer fluxes are equal in magnitude and opposite in sign to prevent saturation.