Abstract: Systems, apparatuses, and methods of operating memory systems are described. Processing-in-memory capable memory devices are also described, and methods of performing fused-multiply-add operations within the same. Bit positions of bits stored at one or more portions of one or more memory arrays, may be accessed via data lines by activating the same or different access lines. A sensing circuit operatively coupled to a data line may be temporarily formed and measured to determine a state (e.g., a count of the number of bits that are a logic “1”) of accessed bit positions of a data line, and state information may be used to determine a computational result.

Abstract: Systems, methods and apparatuses to throttle network communications for memory as a service are described. For example, a computing device can borrow an amount of random access memory of the lender device over a communication connection between the lender device and the computing device. The computing device can allocate virtual memory to applications running in the computing device, and configure at least a portion of the virtual memory to be hosted on the amount of memory loaned by the lender device to the computing device. The computing device can throttle data communications used by memory regions in accessing the amount of memory over the communication connection according to the criticality levels of the contents stored in the memory regions.

Abstract: Systems, methods and apparatuses to intelligently migrate content involving borrowed memory are described. For example, after the prediction of a time period during which a network connection between computing devices having borrowed memory degrades, the computing devices can make a migration decision for content of a virtual memory address region, based at least in part on a predicted usage of content, a scheduled operation, a predicted operation, a battery level, etc. The migration decision can be made based on a memory usage history, a battery usage history, a location history, etc. using an artificial neural network; and the content migration can be performed by remapping virtual memory regions in the memory maps of the computing devices.

Abstract: Systems, methods and apparatuses of fine grain data migration in using Memory as a Service (MaaS) are described. For example, a memory status map can be used to identify the cache availability of sub-regions (e.g., cache lines) of a borrowed memory region (e.g., a borrowed remote memory page). Before accessing a virtual memory address in a sub-region, the memory status map is checked. If the sub-region has cache availability in the local memory, the memory management unit uses a physical memory address converted from the virtual memory address to make memory access. Otherwise, the sub-region is cached from the borrowed memory region to the local memory, before the physical memory address is used.

Abstract: Systems, methods and apparatuses of Artificial Neural Network (ANN) applications implemented via Memory as a Service (MaaS) are described. For example, a computing system can include a computing device and a remote device. The computing device can borrow memory from the remote device over a wired or wireless network. Through the borrowed memory, the computing device and the remote device can collaborate with each other in storing an artificial neural network and in processing based on the artificial neural network. Some layers of the artificial neural network can be stored in the memory loaned by the remote device to the computing device. The remote device can perform the computation of the layers stored in the borrowed memory on behalf of the computing device. When the network connection degrades, the computing device can use an alternative module to function as a substitute of the layers stored in the borrowed memory.

Abstract: Systems, methods and apparatuses to accelerate accessing of borrowed memory over network connection are described. For example, a memory management unit (MMU) of a computing device can be configured to be connected both to the random access memory over a memory bus and to a computer network via a communication device. The computing device can borrow an amount of memory from a remote device over a network connection using the communication device; and applications running in the computing device can use virtual memory addresses mapped to the borrowed memory. When a virtual address mapped to the borrowed memory is used, the MMU translates the virtual address into a physical address and instruct the communication device to access the borrowed memory.

Abstract: Systems, methods and apparatuses of distributed computing based on Memory as a Service are described. For example, a set of networked computing devices can each be configured to execute an application that accesses memory using a virtual memory address region. Each respective device can map the virtual memory address region to the local memory for a first period of time during which the application is being executed in the respective device, map the virtual memory address region to a local memory of a remote device in the group for a second period of time after starting the application in the respective device and before terminating the application in the respective device, and request the remote device to process data in the virtual memory address region during at least the second period of time.

Abstract: Systems, methods and apparatuses to provide memory as a service are described. For example, a borrower device is configured to: communicate with a lender device; borrow an amount of memory from the lender device; expand memory capacity of the borrower device for applications running on the borrower device, using at least the local memory of the borrower device and the amount of memory borrowed from the lender device; and service accesses by the applications to memory via communication link between the borrower device and the lender device.

Abstract: A compute unit configured to execute multiple threads in parallel is presented. The compute unit includes one or more single instruction multiple data (SIMD) units and a fetch and decode logic. The SIMD units have differing numbers of arithmetic logic units (ALUs), such that each SIMD unit can execute a different number of threads. The fetch and decode logic is in communication with each of the SIMD units, and is configured to assign the threads to the SIMD units for execution based on such differing numbers of ALUs.

Abstract: Methods, systems, and devices related to domain-based access in a memory device are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). The memory array may be organized according to domains, which may refer to various configurations or collections of access lines, and selections thereof, of different portions of the memory array. In various examples, a memory device may determine a plurality of domains for a received access command, or an order for accessing a plurality of domains for a received access command, or combinations thereof, based on an availability of the signal development cache.

Abstract: Methods, systems, and devices related to multiplexed signal development in a memory device are described. In one example, an apparatus in accordance with the described techniques may include a set of memory cells, a sense amplifier, and a set of signal development components each associated with one or more memory cells of the set of memory cells. The apparatus may further include a selection component, such as a signal development component multiplexer, that is coupled with the set of signal development components. The selection component may be configured to selectively couple a selected signal development component of the set of signal development components with the sense amplifier, which may support examples of signal development during overlapping time intervals.

Abstract: Methods, systems, and devices related to data relocation via a cache are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). In some cases, the memory device may transfer data from a first address of the memory array to the signal development cache. The memory device may transfer the data stored in the signal development cache to a second address of the memory array based on a parameter associated with the first address of the memory array satisfying a criterion for performing data relocation.

Abstract: A method for manufacturing a three-dimensional integrated circuit includes attaching a first side of a first die to a first carrier wafer. The method includes preparing a second side of the first die to generate a prepared second side of the first die. The method includes attaching the prepared second side of the first die to a second carrier wafer. The method includes removing the first carrier wafer from the first side of the first die to form a transitional three-dimensional integrated circuit. The method includes attaching a third carrier wafer to a first side of the transitional three-dimensional integrated circuit. The method includes attaching a first side of the second die to a second side of the transitional three-dimensional integrated circuit.

Abstract: A modified 1C1T cell detects when the charge in the memory cell drops below a predetermined voltage due to leakage and asserts a refresh signal indicating that refresh needs to be performed on those memory cells associated with the modified 1C1T memory cell. The associated memory cells may be a row, a bank, or other groupings of memory cells. Because temperature affects leakage current, the modified memory cell automatically adjusts for temperature.

Abstract: A method and processing apparatus for accelerating program processing is provided that includes a plurality of processors configured to process a plurality of tasks of a program and a controller. The controller is configured to determine, from the plurality of tasks being processed by the plurality of processors, a task being processed on a first processor to be a lagging task causing a delay in execution of one or more other tasks of the plurality of tasks. The controller is further configured to provide the determined lagging task to a second processor to be executed by the second processor to accelerate execution of the lagging task.

Abstract: A three-dimensional integrated circuit includes a first die having a first geometry. The first die includes a first region that operates with a first power density and a second region that operates with a second power density. The first power density is less than the second power density. The first die includes first electrical contacts disposed in the first region on a first side of the first die along a periphery of the first die. The three-dimensional integrated circuit includes a second die having a second geometry. The second die includes second electrical contacts disposed on a first side of the second die. A stacked portion of the second die is stacked within the periphery of the first die and an overhang portion of the second die extends beyond the periphery of the first die. The second electrical contacts are aligned with and coupled to the first electrical contacts.

Abstract: Various chip stack power delivery circuits are disclosed. In one aspect, an apparatus is provided that includes a stack of semiconductor chips that has an uppermost semiconductor chip and a lowermost semiconductor chip. A heat spreader is positioned on the uppermost semiconductor chip. A power transfer circuit is configured to transfer electric power from the heat spreader to the uppermost semiconductor chip.

Abstract: A technique for accessing memory in an accelerated processing device coupled to stacked memory dies is provided herein. The technique includes receiving a memory access request from an execution unit and identifying whether the memory access request corresponds to memory cells of the stacked dies that are considered local to the execution unit or non-local. For local accesses, the access is made “directly”, that is, without using a bus. A control die coordinates operations for such local accesses, activating particular through-silicon-vias associated with the memory cells that include the data for the access. Non-local accesses are made via a distributed cache fabric and an interconnect bus in the control die. Various other features and details are provided below.

Abstract: Various chip stack power delivery circuits are disclosed. In one aspect, an apparatus is provided that includes a stack of semiconductor chips that has an uppermost semiconductor chip and a lowermost semiconductor chip. A heat spreader is positioned on the uppermost semiconductor chip. A power transfer circuit is configured to transfer electric power from the heat spreader to the uppermost semiconductor chip.

Abstract: A three-dimensional integrated circuit includes a first die having a first geometry. The first die includes a first region that operates with a first power density and a second region that operates with a second power density. The first power density is less than the second power density. The first die includes first electrical contacts disposed in the first region on a first side of the first die along a periphery of the first die. The three-dimensional integrated circuit includes a second die having a second geometry. The second die includes second electrical contacts disposed on a first side of the second die. A stacked portion of the second die is stacked within the periphery of the first die and an overhang portion of the second die extends beyond the periphery of the first die. The second electrical contacts are aligned with and coupled to the first electrical contacts.