Patents by Inventor Dmitry Shur
Dmitry Shur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11322333Abstract: A scintillator assembly including an entrance surface for receiving charged particles into the scintillator assembly, the charged particles including first charged particles at a first energy level and second charged particles at a second energy level. A first scintillator structure configured for receiving the first charged particles and generating a corresponding first signal formed of first photons with a first wavelength of ?1, a second scintillator structure configured for receiving the second charged particles and generating a corresponding second signal of second photons with a second wavelength of ?2, and an emitting surface for egress of a combined signal from the scintillator assembly, the combined signal including the first and second photons, and at least one beam splitter for receiving the combined signal and separating the combined signal to first and second photons.Type: GrantFiled: May 6, 2021Date of Patent: May 3, 2022Assignee: EL-MUL TECHNOLOGIES LTDInventors: Dmitry Shur, Eli Cheifetz, Armin Schon
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Publication number: 20210280387Abstract: A scintillator assembly including an entrance surface for receiving charged particles into the scintillator assembly, the charged particles including first charged particles at a first energy level and second charged particles at a second energy level. A first scintillator structure configured for receiving the first charged particles and generating a corresponding first signal formed of first photons with a first wavelength of ?1, a second scintillator structure configured for receiving the second charged particles and generating a corresponding second signal of second photons with a second wavelength of ?2, and an emitting surface for egress of a combined signal from the scintillator assembly, the combined signal including the first and second photons, and at least one beam splitter for receiving the combined signal and separating the combined signal to first and second photons.Type: ApplicationFiled: May 6, 2021Publication date: September 9, 2021Inventors: Dmitry SHUR, Eli CHEIFETZ, Armin SCHON
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Patent number: 11031210Abstract: A scintillator assembly including an entrance surface for receiving charged particles into the scintillator assembly, the charged particles including first charged particles at a first energy level and second charged particles at a second energy level. A first scintillator structure configured for receiving the first charged particles and generating a corresponding first signal formed of first photons with a first wavelength of ?1, a second scintillator structure configured for receiving the second charged particles and generating a corresponding second signal of second photons with a second wavelength of ?2, and an emitting surface for egress of a combined signal from the scintillator assembly, the combined signal including the first and second photons, and at least one beam splitter for receiving the combined signal and separating the combined signal to first and second photons.Type: GrantFiled: March 6, 2020Date of Patent: June 8, 2021Assignee: EL-MUL TECHNOLOGIES LTD.Inventors: Dmitry Shur, Eli Cheifetz, Armin Schon
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Patent number: 10910193Abstract: An electron detector assembly configured for detecting electrons emitted from a sample irradiated by an electron beam, including a scintillator configured with a scintillator layer formed with a scintillating surface. The scintillator layer emits light signals corresponding to impingement of electrons upon the scintillating surface. A light guide plate is coupled to the scintillator layer and includes a peripheral surface. One or more silicon photomultiplier devices are positioned upon the peripheral surface, wherein one or more silicon photomultiplier devices are arranged perpendicularly or obliquely relative to the scintillating surface. The silicon photomultiplier device is configured to yield an electrical signal from an electron impinging upon the scintillator surface.Type: GrantFiled: March 18, 2019Date of Patent: February 2, 2021Assignee: EL-MUL TECHNOLOGIES LTD.Inventors: Eli Cheifetz, Amit Weingarten, Semyon Shopman, Silviu Reinhorn, Dmitry Shur
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Publication number: 20200312609Abstract: A scintillator assembly including an entrance surface for receiving charged particles into the scintillator assembly, the charged particles including first charged particles at a first energy level and second charged particles at a second energy level. A first scintillator structure configured for receiving the first charged particles and generating a corresponding first signal formed of first photons with a first wavelength of ?1, a second scintillator structure configured for receiving the second charged particles and generating a corresponding second signal of second photons with a second wavelength of ?2, and an emitting surface for egress of a combined signal from the scintillator assembly, the combined signal including the first and second photons, and at least one beam splitter for receiving the combined signal and separating the combined signal to first and second photons.Type: ApplicationFiled: March 6, 2020Publication date: October 1, 2020Inventors: Dmitry SHUR, Eli CHEIFETZ, Armin SCHON
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Publication number: 20190259571Abstract: An electron detector assembly configured for detecting electrons emitted from a sample irradiated by an electron beam, including a scintillator configured with a scintillator layer formed with a scintillating surface. The scintillator layer emits light signals corresponding to impingement of electrons upon the scintillating surface. A light guide plate is coupled to the scintillator layer and includes a peripheral surface. One or more silicon photomultiplier devices are positioned upon the peripheral surface, wherein one or more silicon photomultiplier devices are arranged perpendicularly or obliquely relative to the scintillating surface. The silicon photomultiplier device is configured to yield an electrical signal from an electron impinging upon the scintillator surface.Type: ApplicationFiled: March 18, 2019Publication date: August 22, 2019Inventors: ELI CHEIFETZ, AMIT WEINGARTEN, SEMYON SHOFMAN, SILVIU REINHORN, DMITRY SHUR
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Patent number: 9442369Abstract: An electro-deposition apparatus deposits a first pattern of a lithographic mask. The electro-deposition apparatus then deposits a second pattern of the lithographic mask, at least partially offset from the first pattern. The resulting lithographic mask includes a first pattern having a minimum feature resolution size and maximum pitch, and a second pattern having the same minimum feature resolution size and maximum pitch. The first pattern and second pattern are at least partially offset such that a fractional portion of the second pattern is realized and light transmission is more precisely controlled.Type: GrantFiled: July 24, 2013Date of Patent: September 13, 2016Assignee: KLA-Tencor CorporationInventors: Dmitry Shur, Joel Seligson
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Patent number: 9214317Abstract: The present disclosure is directed to a method of performing SEM overlay metrology with scan direction substantially aligned with or parallel to feature placement or patterning of overlay target structures. By scanning target structures in the same or similar direction to the feature placement, blurring at the edges of interest is avoided and a line-to-line or edge-to-edge offset between pattern elements is less susceptible to error from blurring at scanned edges of interest. For example, at least two linear pattern elements corresponding to at least two sample layers may be scanned along or parallel to the direction of feature placement (i.e., along or parallel to long edges of the pattern elements).Type: GrantFiled: May 29, 2014Date of Patent: December 15, 2015Assignee: KLA-Tencor CorporationInventor: Dmitry Shur
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Publication number: 20140353498Abstract: The present disclosure is directed to a method of performing SEM overlay metrology with scan direction substantially aligned with or parallel to feature placement or patterning of overlay target structures. By scanning target structures in the same or similar direction to the feature placement, blurring at the edges of interest is avoided and a line-to-line or edge-to-edge offset between pattern elements is less susceptible to error from blurring at scanned edges of interest. For example, at least two linear pattern elements corresponding to at least two sample layers may be scanned along or parallel to the direction of feature placement (i.e., along or parallel to long edges of the pattern elements).Type: ApplicationFiled: May 29, 2014Publication date: December 4, 2014Applicant: KLA-Tencor CorporationInventor: Dmitry Shur
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Patent number: 8546756Abstract: A system and a method for material analysis of a microscopic element, the method comprising: illuminating an area that includes at least a portion of the microscopic element by a charged particle beam, detecting particles that are generated in the area in response to the charged particle beam and analyzing the detected particles to provide an indication about a material characteristic of the microscopic element, wherein the operation of illumination is implemented as a sequence of displacement compensation determination periods, each provided between consecutive material analysis periods, the method further comprising evaluating during a displacement compensation determination period, a displacement of the charged particle beam with respect to the microscopic element and during a consecutive material analysis period applying a spatial adjustment measure as required, thereby compensating for a drift of the charged particle beam.Type: GrantFiled: January 22, 2009Date of Patent: October 1, 2013Assignee: Applied Materials Israel, Ltd.Inventors: Dmitry Shur, Yaron Cohen
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Publication number: 20110024622Abstract: A system and a method for material analysis of a microscopic element, the method comprising: illuminating an area that includes at least a portion of the microscopic element by a charged particle beam, detecting particles that are generated in the area in response to the charged particle beam and analyzing the detected particles to provide an indication about a material characteristic of the microscopic element, wherein the operation of illumination is implemented as a sequence of displacement compensation determination periods, each provided between consecutive material analysis periods, the method further comprising evaluating during a displacement compensation determination period, a displacement of the charged particle beam with respect to the microscopic element and during a consecutive material analysis period applying a spatial adjustment measure as required, thereby compensating for a drift of the charged particle beam.Type: ApplicationFiled: January 22, 2009Publication date: February 3, 2011Inventor: Dmitry Shur
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Patent number: 7602197Abstract: A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.Type: GrantFiled: June 7, 2004Date of Patent: October 13, 2009Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Dmitry Shur, Christopher Talbot
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Patent number: 7476875Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.Type: GrantFiled: July 17, 2007Date of Patent: January 13, 2009Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Chris Talbot, Dmitry Shur, Andreas G. Hegedus
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Patent number: 7473911Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.Type: GrantFiled: October 27, 2003Date of Patent: January 6, 2009Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Dror Shemesh, Yaniv Brami, Dmitry Shur
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Patent number: 7381978Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.Type: GrantFiled: February 3, 2005Date of Patent: June 3, 2008Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Chris Talbot, Dmitry Shur, Andreas G. Hegedus
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Publication number: 20070257191Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.Type: ApplicationFiled: July 17, 2007Publication date: November 8, 2007Inventors: Alexander Kadyshevitch, Christopher Talbot, Dmitry Shur, Andreas Hegedus
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Patent number: 7279689Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.Type: GrantFiled: July 13, 2005Date of Patent: October 9, 2007Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Chris Talbot, Dmitry Shur, Andreas G. Hegedus
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Publication number: 20070057687Abstract: A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.Type: ApplicationFiled: June 7, 2004Publication date: March 15, 2007Inventors: Alexander Kadyshevitch, Dmitry Shur, Christopher Talbot
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Publication number: 20060113471Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.Type: ApplicationFiled: July 13, 2005Publication date: June 1, 2006Inventors: Alexander Kadyshevitch, Christopher Talbot, Dmitry Shur, Andreas Hegedus
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Patent number: 7038224Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.Type: GrantFiled: May 9, 2003Date of Patent: May 2, 2006Assignee: Applied Materials, Israel, Ltd.Inventors: Alexander Kadyshevitch, Chris Talbot, Dmitry Shur, Andreas G. Hegedus