Patents by Inventor Dmitry SUPTEL

Dmitry SUPTEL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocations
    Patent number: 11965266
    Abstract: A device (1?, 1?, 1??) for manufacturing III-V-crystals and wafers (14) manufactured therefrom, which are free of residual stress and dislocations, from melt (16) of a raw material optionally supplemented by lattice hardening dopants comprises a crucible (2?, 2?, 2??) for receiving the melt (16) having a first section (4?, 4?) including a first cross-sectional area and a second section (6?) for receiving a seed crystal (12) and having a second cross-sectional area, wherein the second cross-sectional area is smaller than the first cross-sectional area and the first and second sections are connected with each other directly or via third section (8, 8?) which tapers from the first section towards the second section, in order to allow a crystallization starting from the seed crystal (12) within the directed temperature field (T) into the solidifying melt.
    Type: Grant
    Filed: June 3, 2020
    Date of Patent: April 23, 2024
    Assignee: Freiberger Compound Materials GMBH
    Inventors: Stefan Eichler, Michael Rosch, Dmitry Suptel, Ulrich Kretzer, Berndt Weinert
  • DEVICE AND METHOD OF MANUFACTURING AIII-BV-CRYSTALS AND SUBSTRATE WAFERS MANUFACTURED THEREOF FREE OF RESIDUAL STRESS AND DISLOCATIONS
    Publication number: 20220106702
    Abstract: A device (1?, 1?, 1??) for manufacturing III-V-crystals and wafers (14) manufactured therefrom, which are free of residual stress and dislocations, from melt (16) of a raw material optionally supplemented by lattice hardening dopants comprises a crucible (2?, 2?, 2??) for receiving the melt (16) having a first section (4?, 4?) including a first cross-sectional area and a second section (6?) for receiving a seed crystal (12) and having a second cross-sectional area, wherein the second cross-sectional area is smaller than the first cross-sectional area and the first and second sections are connected with each other directly or via third section (8, 8?) which tapers from the first section towards the second section, in order to allow a crystallization starting from the seed crystal (12) within the directed temperature field (T) into the solidifying melt.
    Type: Application
    Filed: June 3, 2020
    Publication date: April 7, 2022
    Inventors: Stefan EICHLER, Michael ROSCH, Dmitry SUPTEL, Ulrich KRETZER, Berndt WEINERT