Abstract: The present invention relates to a poly(p-xylylene)-based polymer having a low dielectric constant suitable for low loss dielectrics (LLD), and an insulating material, a printed circuit board and a functional element using the same. More particularly, the poly(p-xylylene)-based polymer includes at least one repeat unit expressed by the following formula (1): wherein, at least one of R1, R2, R7 and R8 is independently substituted or unsubstituted C6-C20 aryl; the rest of R1 to R8 are each and independently H, substituted or unsubstituted linear C1-C3 alkyl, or substituted or unsubstituted branched C1-C3 alkyl; and n is an integer of 400 to 900.

Abstract: Disclosed herein is a curable cyclic phosphazene compound having a low dielectric constant, a low dielectric loss index and high thermal stability, and a method of preparing the same. The curable cyclic phosphozene polymer prepared using the compound has a low dielectric constant and excellent thermal properties, compared to conventional phosphozene polymers.

Abstract: Disclosed herein is a curable cyclic phosphazene compound having a low dielectric constant, a low dielectric loss index and high thermal stability, and a method of preparing the same. The curable cyclic phosphozene polymer prepared using the compound has a low dielectric constant and excellent thermal properties, compared to conventional phosphozene polymers.

Abstract: The present invention relates to a to a norbornene-based polymer having a low dielectric constant and low-loss properties, and an insulating material, a printed circuit board and a functional device using the same. More particularly, it relates to a norbornene-based polymer expressed by the following formula (1): wherein, at least one of R1 to R4 is independently substituted or unsubstituted linear C4-C31 arylalkyl or substituted or unsubstituted branched C4-C31 arylalkyl; the rest of R1 to R4 are each and independently H, substituted or unsubstituted linear C1-C3 alkyl, or substituted or unsubstituted branched C1-C3 alkyl; and n is an integer of 250 to 400.

Abstract: The present invention relates to a poly(p-xylylene)-based polymer having a low dielectric constant suitable for low loss dielectrics (LLD), and an insulating material, a printed circuit board and a functional element using the same. More particularly, the poly(p-xylylene)-based polymer includes at least one repeat unit expressed by the following formula (1): wherein, at least one of R1, R2, R7 and R8 is independently substituted or unsubstituted C6-C20 aryl; the rest of R1 to R8 are each and independently H, substituted or unsubstituted linear C1-C3 alkyl, or substituted or unsubstituted branched C1-C3 alkyl; and n is an integer of 400 to 900.

Abstract: A polysilsesquioxane copolymer, a polysilsesquioxane copolymer including the same, an organic light emitting diode display including the same, and associated methods, the polysilsesquioxane copolymer including a copolymer including repeating units derived from a first monomer selected from the group consisting of alkoxyphenyltrialkoxysilane, alkoxyphenylalkyltrialkoxysilane, alkoxycarbonylphenyltrialkoxysilane, and alkoxycarbonylphenylalkyltrialkoxysilane, and repeating units derived from a second monomer including an ?,?-bis(trialkoxysilyl) compound monomer.

Abstract: An insulating film according to an embodiment of the present invention has Chemical Formula 1 wherein the Rs are equal to or different from each other, m is an integer, the Rs have Chemical Formula 2: R=R1R2R3,??(2) and R1, R2, and R3 in the Chemical Formula 2 are one selected from Chemical Formulae 3, 4 and 5, respectively (n is an integer):

Abstract: An insulating film according to an embodiment of the present invention has Chemical Formula 1 wherein the Rs are equal to or different from each other, m is an integer, the Rs have Chemical Formula 2: R=R1R2R3) ??(2), and R1, R2, and R3 in the Chemical Formula 2 are one selected from Chemical Formulae 3, 4 and 5, respectively (n is an integer):

Abstract: The present invention relates to polymethylsilsesquioxane copolymers, and methods for preparing the copolymers and low-dielectric PMSSQ coating films. Polymethylsilsesquioxane copolymer of the present invention is synthesized by a copolymerization reaction using a methyltrialkokxysilane [A: CH3Si(OR)3] and &agr;,&ohgr;-bistrialkokxysilane compound [B: (RO)3Si—X—Y—Si(OR)3, wherein X and Y are identical or different hydrocarbon groups and are linked to each other by carbon] as a copolymerization monomer, and it contains Si—OH terminal group more than 10% in content, and has molecular weight ranging from 5,000 to 30,000. The coating film prepared from the low dielectric PMSSQ according to the present invention meets the two inevitable requirements for next generation semiconductor industry, i.e., mechanical strength (hardness 1.9 Gpa, Modulus 12 Gpa) and low dielectric property (<2.3).

Abstract: The present invention relates to a light-modulating composition comprising a low molecular weight liquid crystalline material dispersed in a polymer including a non-mesogenic crosslinking monomer reacted with a mesogenic monomer comprising a mesogenic group, a spacer, and one or more reactive functionality.

Abstract: The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.

Abstract: The invention relates to a process for making an integrated circuit device comprising (i) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the condensation product of silsesquioxane in the presence of a photosensitive or thermally sensitive base generator.

Abstract: An in-plane switched liquid crystal device IPS LCD which provides fast switching times is formed by filling an empty IPS LCD panel having an array of display elements with a mixture of nematic liquid crystal material and a mesogenic polymerizable material, such as monomers or polymer precursers and suitable photoinitiators, curing, or cross-linking agents, and then polymerizing the mixture such that a phase-separated network of cross-linked polymer strands is formed. The cross-linked network of polymer strands displays an average orientation whose average orientation substantially conforms with nematic orientation of the nematic liquid crystal material in its “field-off” state.

Abstract: The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.

Abstract: The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polyarylene ether.

Abstract: The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and polyamic ester preferably terminated with an alkoxysilyl alkyl group.

Abstract: The invention relates to a process for making an integrated circuit device comprising (I) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the condensation product of silsesquioxane precursor in the presence of an organic amine having a boiling point greater than 150.degree. C.

Abstract: The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.

Abstract: The invention relates to an integrated circuit device comprising (i) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a porous dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and polyamic ester preferably terminated with an alkoxysilyl alkyl group.