Patents by Inventor Doeke Oostra

Doeke Oostra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device with a heterojunction by implantation with carbon-halogen compound
    Patent number: 5354696
    Abstract: A method of manufacturing a semiconductor device in which a surface zone (3) adjoining a surface (2) is formed in a silicon semiconductor body (1) by local application of carbon and dopant atoms, the carbon atoms being provided by means of implantation (4). Halogen atoms are provided simultaneously with the carbon atoms by means of an implantation with ions of a carbon-halogen compound, after which a heat treatment is carried out such that non-bonded halogen atoms are removed from the surface zone (3). Such a method is suitable for making a surface zone (3) which has a greater bandgap than silicon. The surface (3) is suitable, for example, for making an emitter region of a heterojunction bipolar transistor (HBT).
    Type: Grant
    Filed: July 22, 1993
    Date of Patent: October 11, 1994
    Assignee: U.S. Philips Corporation
    Inventors: Doeke Oostra, Jozef J. M. Ottenheim, Jarig Politiek