Patents by Inventor Doh Hoon Kim
Doh Hoon Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10680177Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a laser-processed pattern by irradiating a laser beam from above a base; and forming a wet-etched pattern that continues from the laser-processing pattern, by performing wet etching from above the base or from below the base on which the laser-processed pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.Type: GrantFiled: August 4, 2016Date of Patent: June 9, 2020Assignee: AP SYSTEMS INC.Inventors: Jong-Kab Park, Bo-Ram Kim, Jun-Gyu Hur, Doh-Hoon Kim
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Patent number: 10428415Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a wet-etched pattern by performing wet etching from above a base; and forming a laser-processed pattern that continues from the wet-etched pattern, by performing laser processing from above the base or from below the base on which the wet-etched pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.Type: GrantFiled: August 4, 2016Date of Patent: October 1, 2019Assignee: AP SYSTEMS INC.Inventors: Jong-Kab Park, Bo-Ram Kim, Jun-Gyu Hur, Doh-Hoon Kim
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Publication number: 20180205018Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a laser-processed pattern by irradiating a laser beam from above a base; and forming a wet-etched pattern that continues from the laser-processing pattern, by performing wet etching from above the base or from below the base on which the laser-processed pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.Type: ApplicationFiled: August 4, 2016Publication date: July 19, 2018Applicant: AP Systems Inc.Inventors: Jong-Kab PARK, Bo-Ram KIM, Jun-Gyu HUR, Doh-Hoon KIM
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Publication number: 20180202035Abstract: The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a wet-etched pattern by performing wet etching from above a base; and forming a laser-processed pattern that continues from the wet-etched pattern, by performing laser processing from above the base or from below the base on which the wet-etched pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.Type: ApplicationFiled: August 4, 2016Publication date: July 19, 2018Applicant: AP SYSTEMS INC.Inventors: Jong-Kab Park, Bo-Ram Kim, Jun-Gyu Hur, Doh-Hoon KIM
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Patent number: 6635404Abstract: A method of fabricating a resist pattern for a gamma gate of high electron mobility transistors of gallium arsenide (GaAs) elements for high-speed data communication with low noise is disclosed. The method of fabricating the gamma gate according to the present invention includes the steps of forming a first resist pattern by coating a first resist on a GaAs substrate, and exposing, developing and baking the coated first resist, sequentially; and forming a second resist pattern by coating a second resist on the GaAs substrate and the first resist pattern. and exposing, developing and baking the coated second resist, sequentially. A portion of the GaAs substrate covered by the first and the second resist patterns defines a region that a footprint of the gamma gate is formed, and a portion of the GaAs substrate which is covered by the first resist pattern, but not covered by the second resist pattern defines a region that a head of the gamma gate is formed.Type: GrantFiled: February 4, 2000Date of Patent: October 21, 2003Assignee: Electronics and Telecommunications Research InstituteInventors: Sang Soo Choi, Jim Hee Lee, Doh Hoon Kim, Kag Hyeon Lee, Hai Bin Chung, Dae Yong Kim
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Patent number: 6542317Abstract: The present invention provides an optical system for crystallization tool for producing an crystallized silicon thin film by using an excimer laser as a light source to crystallize an amorphous silicon thin film through a fine stripped pattern, including 1st to 10th lenses sequentially arranged along an optical axis from said excimer laser, wherein the 1st lens having both side made convex; the 2nd lens having one side made convex toward the light source and the other side concave; the 3rd lens having one side made convex toward the light source and the other side concave; the 4th lens having both side concave; the 5th lens having both side made convex; the 6th lens having one side concave toward the light source and the other side made convex; the 7th lens having one side made convex toward the light source and the other side concave; the 8th lens having both side made convex; the 9th lens having one side made convex toward the light source and the other side concave; and the 10th lens having both side madeType: GrantFiled: December 21, 2000Date of Patent: April 1, 2003Assignee: Electronics and Telecommunications Research InstituteInventors: Kag Hyeon Lee, Doh Hoon Kim, Sang Soo Choi, Hai Bin Chung, Dae Yong Kim
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Publication number: 20010005286Abstract: The present invention provides an optical system for crystallization tool for producing an crystallized silicon thin film by using an excimer laser as a light source to crystallize an amorphous silicon thin film through a fine stripped pattern, including 1st to 10th lenses sequentially arranged along an optical axis from said excimer laser, wherein the 1st lens having both side made convex; the 2nd lens having one side made convex toward the light source and the other side concave; the 3rd lens having one side made convex toward the light source and the other side concave; the 4th lens having both side concave; the 5th lens having both side made convex; the 6th lens having one side concave toward the light source and the other side made convex; the 7th lens having one side made convex toward the light source and the other side concave; the 8th lens having both side made convex; the 9th lens having one side made convex toward the light source and the other side concave; and the 10th lens having both side madeType: ApplicationFiled: December 21, 2000Publication date: June 28, 2001Inventors: Kag Hyeon Lee, Doh Hoon Kim, Sang Soo Choi, Hai Bin Chung, Dae Yong Kim
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Patent number: 6101047Abstract: Provided with an optical system which is applicable to an exposure apparatus used in the manufacture of semiconductors and includes a combination of a spherical mirror having a function of refraction and lenses for astigmation control, using a CaF.sub.2 lens as the last lens, thereby making it possible to use a light source operating at a short wavelength and a wide bandwidth, enhance the life of the optical system, and transfer the enlarge pattern of a mask onto the wafer for realizing fine line width.Type: GrantFiled: August 11, 1998Date of Patent: August 8, 2000Assignee: Electronics and Telecommunications Research InstituteInventors: Hai Bin Chung, Jong Soo Kim, Kag Hyeon Lee, Doh Hoon Kim, Sang Soo Choi, Hyung Joun Yoo
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Patent number: 6057970Abstract: The present invention relates to an apparatus for forming fine patterns in semiconductor devices, display devices and micro-electro-mechanical systems and more particularly to an image projecting system using an optical component, which is made of birefringent material, in the lithography techniques. The lithography apparatus according to the present invention comprises an optical lens system in which an image of a photomask is transferred to an object by a light source, wherein said optical lens system comprises a plurality of isotropic optical unit and at least one birefringent optical unit, said birefringent optical unit including at least one of said birefringent optical components.Type: GrantFiled: September 24, 1998Date of Patent: May 2, 2000Assignee: Electronics and Telecommunications Research InstituteInventors: Doh Hoon Kim, Kag Hyeon Lee, Sang Soo Choi, Hai Bin Chung, Bo Woo Kim