Abstract: A reactor system with an associated wafer support device is provided for use in the growth of an epitaxial layer of semiconductor material on a semiconductor wafer. The reactor system includes a reaction chamber including an inlet and an outlet configured to flow a source gas through the reaction chamber. The reaction system also includes a wafer support mounted at least partially within the reaction chamber, and a semiconductor wafer supported adjacent an outer edge by the wafer support. The wafer support device typically includes a hub and an arm extending outwardly from the hub. The wafer support device also typically includes a contact member coupled to the arm. In some embodiments a portion of the contact member extending downward relative to the back side of the wafer. The downwardly extending portion is configured to contact and support the wafer during epitaxial growth of semiconductor material onto the wafer.