Abstract: An optical distance measuring device and a method for operating an optical distance measuring device are disclosed. In an embodiment an optical distance measuring device includes a pixelated radiation source with at least two pixels, a radiation detector configured to detect electromagnetic radiation emitted by the radiation source and reflected in measuring regions and a control unit configured to operate the radiation source and to receive electrical signals from the radiation detector, wherein the pixelated radiation source is configured to illuminate different measuring regions with electromagnetic radiation with pairwise different properties.

Abstract: An assembly is disclosed. In an embodiment an assembly includes a light source configured to illuminate a field of view, a control circuit configured to operate the light source and a camera configured to record a scene in the field of view, wherein the light source comprises at least one semiconductor component having at least one semiconductor chip, wherein the semiconductor chip has an semiconductor layer sequence with an active region, wherein the semiconductor chip comprises the plurality of pixels, wherein the plurality of pixels are configured to generate radiation of the light source, wherein the control circuit has a memory configured to store operational data of the light source, wherein the control circuit is configured to operate the pixels on basis of the operational data, and wherein the arrangement is configured to perform an adaptation of at least a part of the operational data in the memory during operation of the arrangement.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: A method of manufacturing optoelectronic components includes providing a plurality of optoelectronic semiconductor chips embedded in a carrier layer, wherein a conversion layer is applied to the optoelectronic semiconductor chips and the carrier layer, creating markings in and/or on the conversion layer, and severing the carrier layer to obtain optoelectronic devices, the optoelectronic devices each having at least one of the markings, wherein the at least one marking is at least one recess in the conversion layer.

Abstract: A method of operating a lighting device with a light-emitting component, in which the light-emitting component includes a plurality of pixels configured to illuminate a plurality of zones in a field of view, the light-emitting component includes a processing device including characterization data of the light-emitting component, and the pixels of the light-emitting component are operated as a function of the characterization data, wherein to determine characterization data prior to intended operation of the lighting device an intensity and/or a color location of the emitted light of a pixel or of each pixel is measured as a function of an operating current.

Abstract: An optical distance measuring device and a method for operating an optical distance measuring device are disclosed. In an embodiment an optical distance measuring device includes a pixelated radiation source with at least two pixels, a radiation detector configured to detect electromagnetic radiation emitted by the radiation source and reflected in measuring regions and a control unit configured to operate the radiation source and to receive electrical signals from the radiation detector, wherein the pixelated radiation source is configured to illuminate different measuring regions with electromagnetic radiation with pairwise different properties.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: A method of operating a lighting device with a light-emitting component, in which the light-emitting component includes a plurality of pixels configured to illuminate a plurality of zones in a field of view, the light-emitting component includes a processing device including characterization data of the light-emitting component, and the pixels of the light-emitting component are operated as a function of the characterization data, wherein to determine characterization data prior to intended operation of the lighting device an intensity and/or a color location of the emitted light of a pixel or of each pixel is measured as a function of an operating current.

Abstract: An assembly is disclosed. In an embodiment an assembly includes a light source configured to illuminate a field of view, a control circuit configured to operate the light source and a camera configured to record a scene in the field of view, wherein the light source comprises at least one semiconductor component having at least one semiconductor chip, wherein the semiconductor chip has an semiconductor layer sequence with an active region, wherein the semiconductor chip comprises the plurality of pixels, wherein the plurality of pixels are configured to generate radiation of the light source, wherein the control circuit has a memory configured to store operational data of the light source, wherein the control circuit is configured to operate the pixels on basis of the operational data, and wherein the arrangement is configured to perform an adaptation of at least a part of the operational data in the memory during operation of the arrangement.

Abstract: An optoelectronic arrangement and a lighting device are disclosed. In an embodiment the arrangement includes a semiconductor chip for generating radiation and a radiation conversion element located downstream of the semiconductor chip with respect to a radiation direction, wherein the radiation conversion element includes a plurality of conversion bodies each with a longitudinal extension axis, and wherein a spatial orientation of the longitudinal extension axes has a preferred direction.

Abstract: A method for producing a plurality of conversion elements (10) is specified, comprising providing a carrier substrate (1), introducing a converter material (3) into a matrix material (2), applying the matrix material (2) with the converter material (3) to individual regions (8) of the carrier substrate (1) in a non-continuous pattern, applying a barrier substrate (5) to the matrix material (2) and to the carrier substrate (1), and singulating the carrier substrate (1) with the matrix material (2) and the barrier substrate (5) into a plurality of conversion elements (10) along singulation lines (V), wherein the conversion elements (10) in each case comprise at least one of the regions (8) of the matrix material (2).

Abstract: Disclosed is a conversion element (100). The conversion element (100) comprises: a conversion coating (16), which contains a wavelength-converting conversion material; a first encapsulation coating (30) on a first main surface (20) of the conversion coating, said first encapsulation coating having a thickness of between 10 ?m and 500 ?m; and a second encapsulation coating (32) on a second main surface (22) of the conversion coating, said second encapsulation coating having a thickness of between 0.1 ?m and 20 ?m. Also disclosed are an optoelectronic semiconductor component (200) and a method for producing conversion elements.

Abstract: An optelectonic arrangement and a lighting device are disclosed. In an embodiment the arrangement includes a semiconductor chip for generating radiation and a radiation conversion element located downstream of the semiconductor chip with respect to a radiation direction, wherein the radiation conversion element includes a plurality of conversion bodies each with a longitudinal extension axis, and wherein a spatial orientation of the longitudinal extension axes has a preferred direction.

Abstract: A method for producing a plurality of conversion elements (10) is specified, comprising providing a carrier substrate (1), introducing a converter material (3) into a matrix material (2), applying the matrix material (2) with the converter material (3) to individual regions (8) of the carrier substrate (1) in a non-continuous pattern, applying a barrier substrate (5) to the matrix material (2) and to the carrier substrate (1), and singulating the carrier substrate (1) with the matrix material (2) and the barrier substrate (5) into a plurality of conversion elements (10) along singulation lines (V), wherein the conversion elements (10) in each case comprise at least one of the regions (8) of the matrix material (2).

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.