Abstract: An embodiment includes a process of forming a gate stack that acts to resist the redeposition to the semiconductive substrate of mobilized metal such as from a metal gate electrode. An embodiment also relates to a system that achieves the process. An embodiment also relates to a gate stack structure that provides a composition that resists the redeposition of metal during processing and field use.

Abstract: A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The process includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.

Abstract: The invention includes selective oxidation methods and transistor fabrication methods. In one implementation, a selective oxidation method includes positioning a substrate within a chamber. The substrate has first and second different oxidizable materials. The substrate is therein exposed to a gas mixture comprising an oxidizer and a reducer under conditions effective to selectively grow an oxide layer on the first material relative to the second material. The oxidizer oxidizes the first and second materials under the conditions. The reducer reduces oxidized second material under the conditions back to the second material. After selectively growing the oxide layer on the first material relative to the second material, partial pressure of the oxidizer and the reducer is reduced within the chamber by flowing an inert gas to the chamber while chamber pressure and chamber temperature are at or above those of the conditions during the exposing. Other aspects and implementations are contemplated.

Abstract: An embodiment includes a process of forming a gate stack that acts to resist the redeposition to the semiconductive substrate of mobilized metal such as from a metal gate electrode. An embodiment also relates to a system that achieves the process. An embodiment also relates to a gate stack structure that provides a composition that resists the redeposition of metal during processing and field use.

Abstract: A system and method for selectively increasing the thermal effect of a radiant energy source to the surface of an object relative to the substrate is described in the context of rapid thermal processing of semiconductor wafers, and apparatus produced therefrom. A radiation-absorptive atmosphere is introduced between the radiant energy source and the object to increase conductive heat transfer to the surface of the object and reduce the available radiant heat transfer to the substrate, thereby increasing the thermal effect to the surface relative to the substrate.

Abstract: Systems and devices are disclosed utilizing a silicon-containing barrier layer. A semiconductor device is disclosed and includes a substrate, a gate oxide, a silicon-containing barrier layer and a gate electrode. The gate oxide is formed over the substrate. The silicon-containing barrier layer is formed over the gate oxide by causing silicon atoms of a precursor layer to react with a reactive agent. The gate electrode is formed over the silicon-containing barrier layer.

Abstract: The invention includes selective oxidation methods and transistor fabrication methods. In one implementation, a selective oxidation method includes positioning a substrate within a chamber. The substrate has first and second different oxidizable materials. The substrate is therein exposed to a gas mixture comprising an oxidizer and a reducer under conditions effective to selectively grow an oxide layer on the first material relative to the second material. The oxidizer oxidizes the first and second materials under the conditions. The reducer reduces oxidized second material under the conditions back to the second material. After selectively growing the oxide layer on the first material relative to the second material, partial pressure of the oxidizer and the reducer is reduced within the chamber by flowing an inert gas to the chamber while chamber pressure and chamber temperature are at or above those of the conditions during the exposing. Other aspects and implementations are contemplated.

Abstract: A transistor gate is formed which comprises semiconductive material and conductive metal. Source/drain regions are formed proximate the transistor gate. In one implementation, the transistor gate and source/drain regions are exposed to a gas mixture comprising H2O, H2, a noble gas and N2 under conditions effective to oxidize outer surfaces of the source/drain regions. The N2 is present in the gas mixture at greater than 0% and less than or equal to 20.0% by volume. In one implementation, the transistor gate and source/drain regions are exposed to a gas mixture comprising H2O, H2, and an inert gas under conditions effective to oxidize outer surfaces of the source/drain regions. The conditions comprise a pressure of greater than room ambient pressure. Other aspects and implementations are contemplated.

Abstract: Systems and devices are disclosed utilizing a silicon-containing barrier layer. A semiconductor device is disclosed and includes a substrate, a gate oxide, a silicon-containing barrier layer and a gate electrode. The gate oxide is formed over the substrate. The silicon-containing barrier layer is formed over the gate oxide by causing silicon atoms of a precursor layer react with a reactive agent. The gate electrode is formed over the silicon-containing barrier layer.

Abstract: Disclosed is a process of treating semiconductor substrates, including the production of pure water, a method of producing the pure water for semiconductor fabrication, and a water-producing apparatus. Ammonia is catalytically oxidized in a catalytic conversion reactor to form pure water. The water is then supplied to a semiconductor fabrication process. The water-producing apparatus comprises a housing surrounding a catalytic material for adsorbing ammonia, an ammonia and oxidant source, each in communication with the housing, and an outlet for reaction products. The outlet is connected to a semiconductor processing apparatus. According to preferred embodiments of the invention, the apparatus can be a catalytic tube reactor, a fixed bed reactor or a fluidized bed reactor.

Abstract: A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.

Abstract: Disclosed is a process of treating semiconductor substrates, including the production of pure water, a method of producing the pure water for semiconductor fabrication, and a water-producing apparatus. Ammonia is catalytically oxidized in a catalytic conversion reactor to form pure water. The water is then supplied to a semiconductor fabrication process. The water-producing apparatus comprises a housing surrounding a catalytic material for adsorbing ammonia, an ammonia and oxidant source, each in communication with the housing, and an outlet for reaction products. The outlet is connected to a semiconductor processing apparatus. According to preferred embodiments of the invention, the apparatus can be a catalytic tube reactor, a fixed bed reactor or a fluidized bed reactor.

Abstract: A transistor gate is formed which comprises semiconductive material and conductive metal. Source/drain regions are formed proximate the transistor gate. In one implementation, the transistor gate and source/drain regions are exposed to a gas mixture comprising H2O, H2, a noble gas and N2 under conditions effective to oxidize outer surfaces of the source/drain regions. The N2 is present in the gas mixture at greater than 0% and less than or equal to 20.0% by volume. In one implementation, the transistor gate and source/drain regions are exposed to a gas mixture comprising H2O, H2, and an inert gas under conditions effective to oxidize outer surfaces of the source/drain regions. The conditions comprise a pressure of greater than room ambient pressure. Other aspects and implementations are contemplated.

Abstract: A method of fabricating a semiconductor device including a silicon-containing dielectric layer is provided. In one embodiment, a silicon-containing material is deposited on a substrate. The deposited material is processed with a reactive agent to react with silicon atoms of the deposited material to form the dielectric layer. The silicon-containing dielectric layer provides for improved or smaller semiconductor devices by reducing leakage and increasing the dielectric constant.

Abstract: A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The process includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.

Abstract: A transistor gate is formed which comprises semiconductive material and conductive metal. Source/drain regions are formed proximate the transistor gate. In one implementation, the transistor gate and source/drain regions are exposed to a gas mixture comprising H2O, H2, a noble gas and N2 under conditions effective to oxidize outer surfaces of the source/drain regions. The N2 is present in the gas mixture at greater than 0% and less than or equal to 20.0% by volume. In one implementation, the transistor gate and source/drain regions are exposed to a gas mixture comprising H2O, H2, and an inert gas under conditions effective to oxidize outer surfaces of the source/drain regions. The conditions comprise a pressure of greater than room ambient pressure. Other aspects and implementations are contemplated.

Abstract: An apparatus for use with a deposition chamber includes a temperature control system that communicates with a heating element of the deposition chamber so as to not cause the formation of a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The apparatus causes uneven heat distribution across the surface of the substrate. The apparatus may also include a feedback control system that communicates with the temperature control system so as to cause the temperature control system to alter the heat output by the heating element and, thereby, to enhance the uniformity of at least one property of the material layer being deposited.

Abstract: A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The process includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.

Abstract: Systems and devices are disclosed utilizing a silicon-containing barrier layer. A semiconductor device is disclosed and includes a substrate, a gate oxide, a silicon-containing barrier layer and a gate electrode. The gate oxide is formed over the substrate. The silicon-containing barrier layer is formed over the gate oxide by causing silicon atoms of a precursor layer react with a reactive agent. The gate electrode is formed over the silicon-containing barrier layer.

Abstract: Disclosed is a process of treating semiconductor substrates, including the production of pure water, a method of producing the pure water for semiconductor fabrication, and a water-producing apparatus. Ammonia is catalytically oxidized in a catalytic conversion reactor to form pure water. The water is then supplied to a semiconductor fabrication process. The water-producing apparatus comprises a housing surrounding a catalytic material for adsorbing ammonia, an ammonia and oxidant source, each in communication with the housing, and an outlet for reaction products. The outlet is connected to a semiconductor processing apparatus. According to preferred embodiments of the invention, the apparatus can be a catalytic tube reactor, a fixed bed reactor or a fluidized bed reactor.