Abstract: A photolithographic exposure system and method are presented which employ an LCD panel as a configurable mask. The exposure system includes a light source and an LCD panel. The LCD panel displays a desired pattern, and is positioned between the light source and a light-sensitive layer. The LCD panel includes a plurality of pixel elements (i.e., pixels) arranged in a two-dimensional matrix. Each pixel either substantially passes or blocks light produced by the light source in response to one or more electrical display signals. In addition to the LCD panel, an LCD system includes a display driver, a control unit, and a memory unit. The display driver is coupled to the LCD panel and produces the electrical display signals. The memory unit stores LCD panel display data. The control unit is coupled between the display driver and the memory unit The control unit retrieves data from the memory unit and provides the data to the display driver.

Abstract: An apparatus and method are presented for performing a wafer fabrication operation upon each of a plurality of semiconductor wafers which facilitate determination of a source of semiconductor wafer contaminants or defects. A wafer fabrication tool of the present invention includes a process chamber for processing a semiconductor wafer and a wafer handling system for transporting the semiconductor wafer between a wafer cassette and the process chamber. Semiconductor wafers contained within the wafer cassette are assigned numbers and processed one after another in a predetermined order. The wafer handling system is configurable to remove semiconductor wafers from the wafer cassette for processing in the predetermined order. One embodiment of the wafer handling system includes a mechanical hand for gripping a semiconductor wafer and a mechanical arm coupled to the mechanical hand for positioning the mechanical hand.

Abstract: A method for calibrating an optical pyrometer to an external reference point. By changing the focus of the optical pyrometer without physically moving the pyrometer, calibration of the optical pyrometer can be accomplished without modifying the semiconductor operation. Broadly speaking, the present invention contemplates an apparatus for calibrating an optical pyrometer. The apparatus includes a first optical source in a heating chamber with an optical port, an optical pyrometer, a mirror, and a second optical source. The optical pyrometer is positioned to receive light rays from a first optical source residing inside the heating chamber. The second optical source is located external to the heating chamber. The second optical source serves as an external reference point. The external location of the second optical source allows for calibration of the optical pyrometer without modification of the heating chamber or the first optical source residing inside the heating chamber.

Abstract: A method is presented for consistently forming low resistance contact structures in vias between interconnects. A two-step adhesion layer deposition process with an intermediate particle removing step is employed to ensure sidewalls and bottom surfaces of vias are adequately covered with adhesion layer material prior to via plug formation. Two separate layers of an adhesion layer material (e.g., TiN) are deposited, each layer having a thickness which is adequate for that layer to act as a nucleating surface for subsequently deposited via plug material (e.g., W). The particle removing step is performed following deposition of a first adhesion layer. During the particle removing step, particles of the adhesion layer material are removed from the upper surface of the first adhesion layer, including particles blocking via openings.

Abstract: A lithographic apparatus and method are presented which use an electric field to form features from a desired material upon an upper topography of a semiconductor substrate. A layer of an electric field resist material is formed over a layer of the desired material upon the upper topography of the semiconductor substrate. The electric field resist layer is then patterned by exposure to an electric field via the apparatus. The apparatus includes a plate and a voltage source. In one embodiment, the plate is electrically conductive and a lower surface of the plate has one or more raised portions with recessed portions existing between adjacent raised portions. The lower surface of the conductive plate is positioned above and in close proximity to the exposed surface of the electric field resist layer. The voltage source applies an electrical voltage between the electrically conductive plate and the semiconductor substrate, creating the electric field.

Abstract: Low-mass implants, for example hydrogen and helium ions, are used in place of more typical dopants like boron, phosphorus, and arsenic for testing the performance of ion implanters. Consistency between ion implantation test runs with the low-mass ions may be used to provide information about the proper operation of ion implanters. Lower-mass ions do not transfer as much of their energy to the wafer as heavier ions. Consequently, high energy ion implantations with low-mass ions do not repair wafer surface damage to the same degree as ion implantations with high-mass ions. When sufficient surface damage exists, a thermawave tool can detect the damage and provide information about the performance of the ion implanter. This determination can be made in a one-step method. An additional advantage to implanting the test wafers with low-mass ions is being able to reuse the wafers for subsequent test runs.

Abstract: A technique for removing unwanted portions of a metallization layer in a semiconductor structure, without damage to underlying protective layers of silicon dioxide. The metallization layer is formed with an underlying etch stop layer of titanium-tungsten, the removal of which is effected by a very thin layer of aluminum formed beneath the titanium-tungsten. After removal of unwanted portions of the metallization layer, using a plasma etch to which the titanium-tungsten is resistant, corresponding portions of the titanium tungsten layer are removed using a plasma-etch to which aluminum is resistant. The thin aluminum layer functions as a highly effective etch stop in the removal of titanium-tungsten, but is so thin that there is negligible penetration of aluminum into underlying contact regions.