Abstract: A method and a system for fissile content measurement that utilizes a detector configured to detect fast neutrons. An external radiation source may be used to induce fission in a sample to allow the measurement of a fissile material of the sample with a low spontaneous fission probability. Analyzing the sample may be based on the energy spectrum of emitted neutrons. That is, the energy information regarding the energy of the fast neutrons is obtained, and the fast neutrons as having a high likelihood of originating in a nuclear fission process as opposed to originating in an (alpha,n) reaction by utilizing the obtained energy information are classified to analyze the sample. Alternatively, a position of interaction in the detector of neutron emitted by the sample is measured, and this position is retraced back through intervening material(s) between the detector and the sample to determine the spacial geometry of the sample.

Abstract: A method and a system for fissile content measurement that utilizes a detector configured to detect fast neutrons. An external radiation source may be used to induce fission in a sample to allow the measurement of a fissile material of the sample with a low spontaneous fission probability. Analyzing the sample may be based on the energy spectrum of emitted neutrons. That is, the energy information regarding the energy of the fast neutrons is obtained, and the fast neutrons as having a high likelihood of originating in a nuclear fission process as opposed to originating in an (alpha,n) reaction by utilizing the obtained energy information are classified to analyze the sample. Alternatively, a position of interaction in the detector of neutron emitted by the sample is measured, and this position is retraced back through intervening material(s) between the detector and the sample to determine the spacial geometry of the sample.

Abstract: A method of making a Schottky diode comprising the steps of: providing a single crystal diamond comprising a surface; placing the single crystal diamond in a CVD system; heating the diamond to a temperature of at least about 950° C.; providing a gas mixture capable of growing diamond film and comprising a sulfur compound through the CVD system; growing an epitaxial diamond film on the surface of the single crystal diamond; baking the diamond at a temperature of at least about 650° C. in air for a period of time that minimizes oxidation of the diamond; and fabricating a Schottky diode comprising the diamond film. A Schottky diode comprising an epitaxial diamond film and capable of blocking at least about 6 kV in a distance of no more than about 300 &mgr;m.

Abstract: A method of making a Schottky diode comprising the steps of: providing a single crystal diamond comprising a surface; placing the single crystal diamond in a CVD system; heating the diamond to a temperature of at least about 950° C.; providing a gas mixture capable of growing diamond film and comprising a sulfur compound through the CVD system; growing an epitaxial diamond film on the surface of the single crystal diamond; baking the diamond at a temperature of at least about 650° C. in air for a period of time that minimizes oxidation of the diamond; and fabricating a Schottky diode comprising the diamond film. A Schottky diode comprising an epitaxial diamond film and capable of blocking at least about 6 kV in a distance of no more than about 300 &mgr;m.