Abstract: A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.

Abstract: A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.

Abstract: A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.

Abstract: The invention relates to a ball-limiting metallurgy (BLM) etching system and process. The BLM stack is provided for an electrical device that contains an aluminum layer disposed upon a metal first layer. A metal upper layer is disposed above the metal second layer, and an alternative metal third layer is disposed between the metal second layer and the metal upper layer. The etching system and process utilizes an etching solution that includes a nitrogen-containing heterocyclic compound, an ammonium hydroxide compound, an oxidizer, and a metal halide compound. Etching conditions prevent any metallization that is dissolved from redepositing, thus avoiding lowered yields.

Abstract: A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.

Abstract: A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.

Abstract: The invention relates to a ball-limiting metallurgy (BLM) etching system and process. The BLM stack is provided for an electrical device that contains an aluminum layer disposed upon a metal first layer. A metal upper layer is disposed above the metal second layer, and an alternative metal third layer is disposed between the metal second layer and the metal upper layer. The etching system and process utilizes an etching solution that includes a nitrogen-containing heterocyclic compound, an ammonium hydroxide compound, an oxidizer, and a metal halide compound. Etching conditions prevent any metallization that is dissolved from redepositing, thus avoiding lowered yields.

Abstract: The invention relates to a ball-limiting metallurgy (BLM) etching system and process. The BLM stack is provided for an electrical device that contains an aluminum layer disposed upon a metal first layer. A metal upper layer is disposed above the metal second layer, and an alternative metal third layer is disposed between the metal second layer and the metal upper layer. The etching system and process utilizes an etching solution that includes a nitrogen-containing heterocyclic compound, an ammonium hydroxide compound, an oxidizer, and a metal halide compound. Etching conditions prevent any metallization that is dissolved from redepositing, thus avoiding lowered yields.

Abstract: A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.

Abstract: A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.

Abstract: The invention relates to a ball-limiting metallurgy (BLM) etching system and process. The BLM stack is provided for an electrical device that contains an aluminum layer disposed upon a metal first layer. A metal upper layer is disposed above the metal second layer, and an alternative metal third layer is disposed between the metal second layer and the metal upper layer. The etching system and process utilizes an etching solution that includes a nitrogen-containing heterocyclic compound, an ammonium hydroxide compound, an oxidizer, and a metal halide compound. Etching conditions prevent any metallization that is dissolved from redepositing, thus avoiding lowered yields.

Abstract: A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.

Abstract: A method for modifying the hydrophobicity of the surface of a carbon-doped oxide film is disclosed. Carbon-doped oxide films have exhibited a high hydrophobic nature which inhibits effective cleaning of its surface by conventional techniques. The present invention uses a surface treatment comprising a solution of sulfuric acid and hydrogen peroxide in water to alter the hydrophobicity of the carbon-doped oxide. After treatment by the sulfuric acid and hydrogen peroxide solution, the surface of the carbon-doped oxide becomes hydrophilic. Moreover, the modification of the carbon-doped oxide only occurs at the surface. Therefore, the low k dielectric characteristics of the carbon-doped oxide are retained.

Abstract: An omnidirectional hydrophone having an elastic shell which is spheroidal so that the circumference of the shell about different axes changes differentially when the shell is subjected to pressure variations. The differences in circumference are advantageously measured by an optical fiber interferometer having one leg wound about the equatorial circumference of the shell and another leg wound about its meridional circumference. The shell may be an oblate spheroid having the ratio of its major axis to is minor axis greater than about (2-.nu.)1/4, where .nu. is Poisson's ratio of the shell material, so that the shell narrows along one axis and widens along the other when the shell is subjected to a pressure change.