Abstract: A vertical cavity surface emitting laser with temperature insensitive threshold current is constructed with a peak gain at a predetermined wavelength and with a Fabry-Perot resonance at a wavelength higher than the predetermined wavelength of the peak gain. As operating temperatures rise the peak gain is reduced but the Fabry-Perot mode moves closer to the peak gain to maintain the current substantially constant.

Abstract: VCSELs including a central active layer with upper and lower mirror stacks wherein a circular trench is formed in one mirror stack to define a lasing area. The trench reduces reflectivity to prevent lasing outside the operating area and an oxygen implant in the trench confines current distribution to maximize power output and efficiency. The trench allows self-alignment throughout most of the manufacturing process.

Abstract: VCSELs including a central active layer with upper and lower mirror stacks wherein a circular trench is formed in one mirror stack to define a lasing area. The trench reduces reflectivity to prevent lasing outside the operating area and a deep beryllium implant in either of the mirror stacks, along with the trench, confines current distribution to maximize power output and efficiency. A transparent metal contact is used as a top contact in one embodiment.

Abstract: A vertical cavity surface emitting laser (VCSEL), comprised of a first 1/4 wave stack, an active layer and a second 1/4 wave stack, is integrated with a heterojunction bipolar transistor (HBT). The HBT is partially or fully positioned within either the first or the second 1/4 wave stack of the VCSEL. This method improves the planarity of the device, thus allowing for high performance devices to be fabricated. A top or bottom emitting device may be fabricated with the second 1/4 wave stack comprised of dielectric layers or semiconductor epitaxial layers.

Abstract: A method is provided for partially collecting light from a polymer waveguide (11, 56). A polymer waveguide (11, 56) is provided, through which a light signal (17) is traveling. A faceted groove (28) is placed in the polymer waveguide (11, 56), thereby reflecting a controllable portion of the light (22) that is traveling through the polymer waveguide (11, 56) from the facet (21) at an oblique angle. Typically, the reflected light is directed into a photodetector (24, 41), which is included into an integrated circuit (52, 53) on a substrate (51).

Abstract: A planar semiconductor laser having low thermal and series resistance is fabricated. The semiconductor laser has an optical waveguide and a lateral current injection path provided by a conductive region. The conductive region disorders the active region and the first 1/4 wave stack of the laser, which reduces the reflectivity, therefore allowing control of the optical waveguide independent of the current flow. By forming the conductive region, the laser of the present invention can have stable optical characteristics and a bigger emission spot due to the weak built-in waveguide, thus resulting in the formation of a device having high output and a low thermal and series resistance.

Abstract: An interface between a laminated polymer optical waveguide (15) and an electronic device (39). The interface does not degrade the desirable properties of the optical waveguide (15), is simple, is low cost, and is compatible with integrated circuit technology as well as optical and electrical connectors (41,42,43,46). The interface includes at least one vertical cavity surface emitting laser or photosensitive diode (11,37) mounted above the surface of the optical waveguide (15). A mirror (21) positioned at an angle with respect to the optical waveguide (15) serves to reflect light between either the vertical cavity surface emitting laser or photosensitive diode (11,37) and the optical waveguide (15). At least one microstrip line (16) couples electrical signals between the vertical cavity surface emitting laser (11,37) and the electronic device (39).

Abstract: A phase-locked laser array comprises a substrate with two spaced-apart pluralities of channels extending towards different reflecting surfaces of the array. The axes of symmetry of the channels of one plurality are offset from the axes of symmetry of the channels of the second plurality. Coupling of light propagating in the optical waveguides over one plurality of channels into the waveguides over the second plurality of channels induces a zero phase difference between the laser oscillations of adjacent channels.

Abstract: A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels for the device, a differential etch rate in a free-etch can be effected to remove only selected portions of the top layer and to provide self-alignment in the metallization process.

Abstract: A phase-locked semiconductor laser array includes a plurality of channels in a surface of a substrate with lands therebetween with laser oscillation occurring in the cavity region over each of the channels. The individual oscillators are coupled by the overlap of their evanescent fields to produce a phase-locked array. Phase-shifting means are included in alternate channels to ensure that the laser light emitted by the different lasing regions are in phase with one another. Preferably the phase-shifting means comprise portions of each of alternate channels having a different spacing from the cavity region than that of the remainder of the channels.

Abstract: A method of forming the proper metallization contacts in a multilayer epitaxy laser device is provided. By selecting the proper crystal plane orientation in etching nonplanar features like channels for the device, a differential etch rate in a free-etch can be effected to remove only selected portions of the top layer and to provide self-alignment in the metallization process.

Abstract: A phase-locked semiconductor array wherein the lasing regions of the array are spaced an effective distance apart such that the modes of oscillation of the different lasing regions are phase-locked to one another. The center-to-center spacing between the lasing regions is non-uniform. This variation in spacing perturbs the preferred 180.degree. phase difference between adjacent lasing regions thereby providing an increased yield of arrays exhibiting a single-lobed, far-field radiation pattern.

Abstract: A stripe semiconductor laser is provided in which the active stripe region is tapered in width. Tapering permits high power operation and a low current density threshold for lasing, while preventing oscillation in unwanted lateral modes.

Abstract: A semiconductor laser is provided in which multiple stripe regions are optically coupled in leaky mode operation.