Abstract: Thin semiconductor films of compounds from groups III-V of the periodic table suitable for solar cells are formed on low cost substrates by forming on the substrate an intermediate film that is chemically related to but has a lower melting point than the desired semiconductor. The desired semiconductor film is then grown on this intermediate film while it is in a molten condition. The molten intermediate layer isolates the substrate from the desired semiconductor layer so that as that layer grows, large area crystals result. The intermediate film may be a semiconductor III-V compound or may be a group III metal alloy.

Abstract: The invention relates to a method for producing a desired thin semiconductor film for use in solar cells. The desired semiconductor is grown epitaxially on a second semiconductor film which may be epitaxial on a third semiconductor. The second semiconductor has a lower melting point than the desired semiconductor. The temperature of the second semiconductor is increased. This creates a molten state in the second semiconductor and the desired semiconductor is stripped away from the second semiconductor. The desired film may be detached by dissolving the second semiconductor with a chemical agent that dissolves the second semiconductor.