Abstract: Methods of and systems for polishing an edge of a substrate are provided. The invention includes rotating a substrate against a polishing film so as to remove material from the edge of the substrate; and detecting an amount of one of energy and torque exerted in rotating the substrate against the polishing film. The invention may further include determining an amount of material removed from the edge of the substrate based on the detected energy or torque exerted in rotating the substrate against the polishing film; ascertaining a difference between the determined amount of material removed and a preset polish level; and determining an amount of energy or torque to be exerted in rotating the substrate adapted to attain the preset polish level based on the difference between the determined amount of material removed and the preset polish level. Numerous other aspects are provided.

Abstract: In a first aspect, an apparatus is provided that includes (1) an idler adapted to contact a substrate, to rotate therewith, and to sense rotation of the substrate; and (2) a driving mechanism coupled to the idler and adapted to drive the idler. Numerous other aspects are provided.

Abstract: A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.

Abstract: Apparatus and methods adapted to polish an edge of a substrate include a polishing film, a frame adapted to tension and load the polishing film so that at least a portion of the film is supported in a plane, and a substrate rotation driver adapted to rotate a substrate against the plane of the polishing film such that the polishing film is adapted to apply force to the substrate, contour to an edge of the substrate, the edge including at least an outer edge and a first bevel, and polish the outer edge and the first bevel as the substrate is rotated. Numerous other aspects are provided.

Abstract: Apparatus and methods adapted to polish an edge of a substrate include a polishing film, a frame adapted to tension and load the polishing film so that at least a portion of the film is supported in a plane, and a substrate rotation driver adapted to rotate a substrate against the plane of the polishing film such that the polishing film is adapted to apply force to the substrate, contour to an edge of the substrate, the edge including at least an outer edge and a first bevel, and polish the outer edge and the first bevel as the substrate is rotated. Numerous other aspects are provided.

Abstract: A method and apparatus for the delivery of slurry solution comprising an ultrasonic flow meter positioned between a fluid preparation manifold and a slurry delivery arm, and a shutoff valve positioned between a proportional valve and the slurry delivery arm. Also, a method and apparatus for the delivery of slurry solution including an ultrasonic flow meter positioned to receive fluid from a fluid preparation manifold, a proportional valve and stepper motor in communication with the flow meter, and a reverse flow restrictor in communication with the proportional valve and a slurry delivery arm.

Abstract: Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an upper surface disposed above the lower layer and below the working surface of the processing layer. The upper surface of the electrode is at least partially exposed to the working surface by a plurality of apertures to provide an electrolyte pathway between the upper surface of the electrode and the working surface of the pad assembly.

Abstract: Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a contact assembly for electrochemically processing a substrate includes a housing having a ball disposed in a passage formed through the housing. The ball is adapted to extend partially from the housing to contact the substrate during processing. The housing comprises a conductive material. In another embodiment, the housing comprises a lower housing and a contact cover wherein the contact cover comprises a conductive material.

Abstract: The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

Abstract: In one aspect, a method for cleaning an edge of a substrate is provided. The method includes the steps of (a) supporting a substrate on a rotatable substrate support; (b) contacting an edge of the substrate with one or more rollers; (c) rotating the substrate support so as to rotate the substrate; and (d) rotating the one or more rollers so as to clean the edge of the substrate Numerous other aspects are provided.

Abstract: A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially outward of substrate with a polarity opposite the bias applied tot he first electrode.

Abstract: Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an upper surface disposed above the lower layer and below the working surface of the processing layer. The upper surface of the electrode is at least partially exposed to the working surface to provide an electrolyte pathway between the upper surface of the electrode and the working surface.

Abstract: A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.

Abstract: A lifting mechanism includes a plurality of lift pins which may be driven separately and independently upward to engage an alignment surface of the chamber using ambient atmospheric pressure as the chamber is evacuated by a pump. In the illustrated embodiment, each lift pin includes a piston which is exposed to the internal chamber pressure on one side of the piston, and is exposed to the external ambient pressure on the other side of the piston. As the pump evacuates the chamber, the internal chamber pressure decreases, causing each lift pin piston to drive the associated lift pin upward. Once all the lift pins have securely engaged the alignment surface, the lift pins may be clamped to a linking mechanism to permit a motor to actuate the lift pins during processing operations.

Abstract: An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer.

Abstract: A lifting mechanism includes a plurality of lift pins which may be driven separately and independently upward to engage an alignment surface of the chamber using ambient atmospheric pressure as the chamber is evacuated by a pump. In the illustrated embodiment, each lift pin includes a piston which is exposed to the internal chamber pressure on one side of the piston, and is exposed to the external ambient pressure on the other side of the piston. As the pump evacuates the chamber, the internal chamber pressure decreases, causing each lift pin piston to drive the associated lift pin upward. Once all the lift pins have securely engaged the alignment surface, the lift pins may be clamped to a linking mechanism to permit a motor to actuate the lift pins during processing operations.

Abstract: Methods are provided for forming a conductor for use in electrochemical mechanical polishing. In one aspect a method is provided for processing a substrate including providing a substrate having a conductive surface, depositing a resist material on the conductive surface, patterning the resist layer to expose portions of the conductive surface, and depositing a metal layer on the exposed portions of the conductive surface by an electrochemical deposition technique.

Abstract: Embodiments of a pad assembly for processing a substrate is provided herein. In one embodiment, the pad assembly includes a body that has a non-conductive first surface and an opposing second surface. A conductive element has a planar first surface laterally disposed from the non-conductive first surface and defines a top processing surface therewith. An electrode is coupled to the second surface of the body. A first set of holes is formed through the body and exposes the electrode to the processing surface.

Abstract: Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.

Abstract: The present invention provides an apparatus for etching a substrate, comprising: a container; a substrate support disposed in the container; a rotation actuator attached to the substrate support; and a fluid delivery assembly disposed in the container to deliver an etchant to a peripheral portion of a substrate disposed on the substrate support. Preferably, the substrate support comprises a vacuum chuck and the fluid delivery assembly comprises one or more nozzles. The invention also provide a method for etching a substrate, comprising: rotating a substrate positioned on a rotatable substrate support; and delivering an etchant to a peripheral portion of the substrate. Preferably, the substrate is rotated at between about 100 rpm and about 1000 rpm, and the etchant is delivered in a direction that is substantially tangent to the peripheral portion of the substrate at an incident angle between about 0 degrees and about 45 degrees from a surface of substrate.