Abstract: An apparatus and method for down-stream plasma processing (both etching and plasma enhanced deposition) are disclosed wherein only a portion of the surface area of a substrate is exposed to the low pressure, reactive gaseous processing environment. The remainder of the substrate remains outside a small enclosed processing area, thus leaving these areas unexposed to the processing agents and providing physical access for monitoring equipment or the like, for example when in-situ monitoring during processing is desired. Etch rates of up to 6 .mu.m/h have been obtained.

Abstract: A clamping device specially structured to provide conformingly shaped jaws and precisely positioned, leveraged fingers adapted to bend metal fence-attaching clips into locking position around adjacent portions of wire fences and round gate posts.