Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract: The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract: To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.

Abstract: To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.