Abstract: In the method of embodiments of the invention, the metal seeded carbon allotropes are reacted in solution forming zero valent metallic nanowires at the seeded sites. A polymeric passivating reagent, which selects for anisotropic growth is also used in the reaction to facilitate nanowire formation. The resulting structure resembles a porcupine, where carbon allotropes have metallic wires of nanometer dimensions that emanate from the seed sites on the carbon allotrope. These sites are populated by nanowires having approximately the same diameter as the starting nanoparticle diameter.

Abstract: A dielectric material includes a network of nanosubstrates, such as but not limited to nanotubes, nanosheets, or other nanomaterials or nanostructures, a polymer base material or matrix, and nanoparticles constructed at least partially of an elemental metal. The network has a predetermined nanosubstrate loading percentage by weight with respect to a total weight of the dielectric material, and a preferential or predetermined longitudinal alignment with respect to an orientation of an incident electrical field. A method of forming the dielectric material includes depositing the metal-based nanoparticles onto the nanosubstrates and subsequently mixing these with a polymer matrix. Once mixed, alignment can be achieved by melt extrusion or a similar mechanical shearing process. Alignment of the nanosubstrate may be in horizontal or vertical direction with respect to the orientation of an incident electrical field.

Abstract: In the method of embodiments of the invention, the metal seeded carbon allotropes are reacted in solution forming zero valent metallic nanowires at the seeded sites. A polymeric passivating reagent, which selects for anisotropic growth is also used in the reaction to facilitate nanowire formation. The resulting structure resembles a porcupine, where carbon allotropes have metallic wires of nanometer dimensions that emanate from the seed sites on the carbon allotrope. These sites are populated by nanowires having approximately the same diameter as the starting nanoparticle diameter.

Abstract: In the method of embodiments of the invention, the metal seeded carbon allotropes are reacted in solution forming zero valent metallic nanowires at the seeded sites. A polymeric passivating reagent, which selects for anisotropic growth is also used in the reaction to facilitate nanowire formation. The resulting structure resembles a porcupine, where carbon allotropes have metallic wires of nanometer dimensions that emanate from the seed sites on the carbon allotrope. These sites are populated by nanowires having approximately the same diameter as the starting nanoparticle diameter.

Abstract: In the method of embodiments of the invention, the metal seeded carbon allotropes are reacted in solution forming zero valent metallic nanowires at the seeded sites. A polymeric passivating reagent, which selects for anisotropic growth is also used in the reaction to facilitate nanowire formation. The resulting structure resembles a porcupine, where carbon allotropes have metallic wires of nanometer dimensions that emanate from the seed sites on the carbon allotrope. These sites are populated by nanowires having approximately the same diameter as the starting nanoparticle diameter.

Abstract: A dielectric material includes a network of nanosubstrates, such as but not limited to nanotubes, nanosheets, or other nanomaterials or nanostructures, a polymer base material or matrix, and nanoparticles constructed at least partially of an elemental metal. The network has a predetermined nanosubstrate loading percentage by weight with respect to a total weight of the dielectric material, and a preferential or predetermined longitudinal alignment with respect to an orientation of an incident electrical field. A method of forming the dielectric material includes depositing the metal-based nanoparticles onto the nanosubstrates and subsequently mixing these with a polymer matrix. Once mixed, alignment can be achieved by melt extrusion or a similar mechanical shearing process. Alignment of the nanosubstrate may be in horizontal or vertical direction with respect to the orientation of an incident electrical field.