Abstract: According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 ? to about 140 ?.

Abstract: An organic light emitting diode, including a first electrode; a second electrode facing the first electrode, the second electrode including magnesium; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer, the electron injection layer including a dipole material including a first component and a second component having different polarities, the dipole material including halide, and a content of the magnesium included in the second electrode being in a range of from 10 to 40 volume %.

Abstract: Disclosed is a method of performing, by a first device, short-range wireless communication with a second device, the method including receiving, from the second device, second authentication information encrypted using first authentication information of the first device, decrypting the encrypted second authentication information by using the first authentication information, determining a secret key based on the decrypted second authentication information, and performing communication between the first device and the second device by using the determined secret key.

Abstract: An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

Abstract: According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 ? to about 140 ?.

Abstract: An organic light emitting diode, including a first electrode; a second electrode facing the first electrode, the second electrode including magnesium; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer, the electron injection layer including a dipole material including a first component and a second component having different polarities, the dipole material including halide, and a content of the magnesium included in the second electrode being in a range of from 10 to 40 volume %.

Abstract: Disclosed are a fuel supply system and method for a ship engine. The fuel supply system for a ship engine of the present invention comprises: a submersible pump which is provided to an LNG storage tank of a ship for supplying LNG to the engine of the ship; a high-pressure pump which has the LNG supplied thereto from the submersible pump and pressurizes the same under high pressure; and a return flow channel which, at the upstream of the high-pressure pump, returns the LNG to the LNG storage tank, wherein the flow of the LNG returning through the return flow channel is controlled, and the temperature of the LNG is controlled at the front end of the high-pressure pump.

Abstract: An organic light emitting diode includes: a first electrode; a second electrode facing the first electrode; a light emission layer between the first electrode and the second electrode; an electron injection layer between the second electrode and the light emission layer; and a buffer layer between the electron injection layer and the second electrode, where the electron injection layer includes a dipolar material and a first metal, and the buffer layer includes a metal having a work function of 4.0 eV or less.

Abstract: A light emitting element includes a first electrode, a second electrode overlapping the first electrode, and an emission layer between the first electrode and the second electrode, the emission layer including quantum dots. The quantum dots include a core and a shell. Each of the core and the shell includes at least two selected from Mg, Zn, Te, Se, and S. When the quantum dots include Mg, a content of Mg in the shell is greater than a content of Mg in the core.

Abstract: A light emitting diode and a display device, the light emitting diode including a first electrode; a second electrode overlapping the first electrode; and an emission layer positioned between the first electrode and the second electrode, wherein the emission layer includes a first material, the first material including an alkali metal halide, an alkaline earth metal halide, a transition metal halide, an alkali metal chalcogenide, or an alkaline earth metal chalcogenide, and a second material, the second material including a lanthanide metal or a compound of a lanthanide metal.

Abstract: An organic light emitting element according to an example embodiment of the present disclosure includes: an anode and a cathode facing each other; an emission layer between the anode and the cathode; an electron transfer layer between the emission layer and the cathode; and a buffer layer between the cathode and the electron transfer layer, wherein the buffer layer includes an inorganic metal halide having p-type semiconductor characteristics.

Abstract: A mirror substrate includes a transparent substrate, a plurality of first mirror patterns arranged on the transparent substrate and spaced apart from each other, each of the first mirror patterns including a phase compensation layer and a first mirror layer sequentially stacked on the transparent substrate, and a second mirror layer disposed on the transparent substrate and between neighboring ones of the first mirror patterns, the second mirror layer having a second thickness less than a first thickness of the first mirror layer.

Abstract: A method of manufacturing a semiconductor device includes forming a via including a first conductive material on an inner wall of a trench on a substrate. The method further includes forming a first insulating interlayer on the substrate. The first insulating interlayer covers the via and partially fills the trench, and the first insulating interlayer has a non-flat upper surface. The method further includes forming a polishing stop layer on the first insulating interlayer, forming a second insulating interlayer on the polishing stop layer, in which the second insulating interlayer fills a remaining portion of the trench, planarizing the second insulating interlayer until the polishing stop layer is exposed, and etching the polishing stop layer and the first and second insulating interlayers using a dry etching process until remaining portions of the polishing stop layer except for a portion of the polishing stop layer in the trench are removed.

Abstract: The present disclosure provides a method for preparing a 7?-alkoxyoxacephem intermediate compound, the method comprising a process (S1) including: reacting a compound represented by a following chemical formula 1 with a halogen compound in an organic solvent to form a reaction product such that unreacted halogen compound remains; and adding metal alkoxide and reducing agent to the reaction product with the unreacted halogen compound remaining, thereby to produce a compound represented by a following chemical formula 2: where R is a Cl, Br, I, halogen derivative, R1 is a carboxyl protecting group including diphenylmethyl, p-methoxybenzyl, p-nitrobenzyl or hydrogen (H), and R2 is an alkyl group having 1 to 4 carbon atoms.

Abstract: A light emitting diode and a light emitting diode display, the light emitting diode including a first electrode; a second electrode overlapping the first electrode; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer, wherein the electron injection layer includes a lanthanide element, an alkali meta first element, and a halogen second element, and wherein the first element and the second element are included in the electron injection layer in an amount of 1 vol % to 20 vol %, based on a total volume of a material including the lanthanide element, the first element, and the second element.

Abstract: An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

Abstract: A light-emitting diode includes a first electrode, a second electrode overlapping the first electrode, a first emission layer and a second emission layer provided between the first electrode and the second electrode, and a first charge generating layer provided between the first emission layer and the second emission layer, the first charge generating layer including a p-type charge generating layer and an n-type charge generating layer. The n-type charge generating layer may include an organic material and an inorganic material doped to the organic material, and the inorganic material may include a lanthanide metal or an alkali earth metal, and an alkali halide.

Abstract: An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

Abstract: A light emitting diode including a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; and an electron transporting region positioned between the second electrode and the emission layer, wherein the electron transporting region includes a tellurium compound of a rare earth metal.

Abstract: An organic light emitting diode includes: a first electrode; a second electrode facing the first electrode; a light emission layer between the first electrode and the second electrode; an electron injection layer between the second electrode and the light emission layer; and a buffer layer between the electron injection layer and the second electrode, where the electron injection layer includes a dipolar material and a first metal, and the buffer layer includes a metal having a work function of 4.0 eV or less.