Abstract: A semiconductor device and or system may be provided. The semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may be configured to output a command/address signal, a first datum and a second datum. The first semiconductor device may be configured to receive a comparison signal relating to the first datum and the second datum. The second semiconductor device may be configured to store a first error code of the first datum and a second error code of the second datum based on the command/address signal during a write operation. The second semiconductor device may be configured to compare the first error code with the second error code to output the comparison signal based on the command/address signal during a read operation.

Abstract: Disclosed herein are a washing machine with a balancer to counterbalance unbalanced load produced during rotation of a drum and a control method thereof. The washing machine having a balancer to counterbalance unbalanced load produced during rotation of the drum seats a mass in a groove in the balancer before rotation of the drum possibly producing unbalance as in the spin-drying cycle begins, thereby efficiently maintaining balance of the drum. Accordingly, vibration in the drum may be reduced and product liability incident due to touch of the frame may be prevented.

Abstract: A balancer includes a balancer housing having an annular channel defined therein, at least one mass movably disposed in the channel, and at least one magnet coupled to one side of the balancer housing to restrain movement of the mass along the channel when rotational speed of a drum of the washing machine is within a predetermined range. The magnet includes a plurality of unit magnets arranged in a circumferential direction of the balancer housing.

Abstract: A washing machine includes a cabinet, a drum rotatably arranged within the cabinet, an annular recess provided in the drum, and a balancer to offset an unbalanced load caused within the drum during rotation of the drum. The balancer includes a balancer housing mounted to the recess and has an annular channel therein, at least one mass movably disposed in the channel, and at least one ball disposed between the balancer housing and the mass to generate rolling motion.

Abstract: A balancer of a washing machine having improved balancing performance. The balancer includes a balancer housing having an annular channel therein, at least one mass movably disposed in the channel at least one groove recessed in an inner surface of the balancer housing so as to accommodate the mass, and at least one magnet coupled to an outer surface of the balancer housing to restrict the mass accommodated in the groove when an RPM of the drum is within a specific RPM range. The magnet is configured as a plurality of N poles and S poles which are arranged alternately, and the outermost pole of the magnet among the plural N poles and S poles has a relatively shorter length than another adjacent pole.

Abstract: A balancer includes a balancer housing having an annular channel defined therein, at least one mass movably disposed in the channel, at least one magnet coupled to one side of the balancer housing to restrain movement of the mass along the channel when rotational speed of a drum of the washing machine is within a predetermined range, and an inclined sidewall formed at an inner surface of the balancer housing to support the mass in a direction resisting centrifugal force applied to the mass during rotation of the drum.

Abstract: A washing machine with a balancer to counterbalance unbalanced load produced during rotation of a drum and a control method thereof. The washing machine with a balancer to counterbalance unbalanced load produced during rotation of a drum perform a ball distributing cycle of seating masses in a groove in the balancer before rotation of the drum possibly producing unbalance as in the spin-drying cycle begins to efficiently maintain balance of the drum, and a laundry untangling cycle of evenly distributing the laundry in the drum. Accordingly, vibration and noise may be reduced during the spin-drying cycle. In addition, in retrying the spin-drying, the ball distributing cycle is restricted based on the rate of rotation of the motor at the moment at which unbalance is sensed. Thereby, delay in cycle time in retrying the spin-drying cycle may be prevented.

Abstract: The present invention is directed to a semiconductor memory device including a plurality of first level contacts arranged in a rectangular array with parallel columns directed along a first direction and parallel rows directed along a second direction. The rectangular array of the plurality of first level contacts have a first pitch and a second pitch along the first and second directions, respectively. The memory device further includes a first and second plurality of second level contacts formed on top of the first level contacts with the first plurality of second level contacts electrically connected to odd columns along the second direction of the first level contacts and the second plurality of second level contacts electrically connected to even columns of the first level contacts; and a first and second plurality of memory elements formed on top of the first and second plurality of second level contacts, respectively.

Abstract: Disclosed herein is a washing machine including a damping device to be operable according to vibration displacement. In a washing machine including a damping device provided to damp a vibration transferred from a washing tub, the damping device includes a suspension member, a damping unit provided to move along the suspension member, and a friction unit provided in the damping unit to form a frictional force with the suspension member, and the friction unit is disposed while being spaced apart from an inner surface of the damping unit to be selectively movable depending on a level of the vibration of the washing tub.

Abstract: A balancer of a washing machine including a balancer housing mounted to a front surface of a drum and having an annular channel therein, a plurality of masses movably disposed along the channel, at least one magnet coupled to the balancer housing so as to restrict the masses from moving along the channel when a revolution per minute value of the drum is within a specific revolution per minute range, and at least one guide groove which is formed on an inner surface of the balancer housing and guides movement of the plural masses when the drum rotates.

Abstract: Disclosed herein is a washing machine having an improved balancing function. The washing machine includes a cabinet, a drum disposed in the cabinet to be rotatable, a balancer installed at the drum to offset an unbalanced load generated at the drum when the drum is rotated, 100 and at least one magnetic body disposed between the balancer and the drum.

Abstract: Fabrication methods using Ion Beam Etching (IBE) for MRAM cell memory elements are described. In embodiments of the invention the top electrode and MTJ main body are etched with one mask using reactive etching such as RIE or magnetized inductively coupled plasma (MICP) for improved selectivity, then the bottom electrode is etched using IBE as specified in various alternative embodiments which include selection of incident angles, wafer rotational rate profiles and optional passivation layer deposited prior to the IBE. The IBE according to the invention etches the bottom electrode without the need for an additional mask by using the layer stack created by the first etching phase as the mask. This makes the bottom electrode self-aligned to MTJ. The IBE also achieves MTJ sidewall cleaning without the need for an additional step.

Abstract: The present invention is directed to a semiconductor memory device including a plurality of first level contacts arranged in an array with every third row vacant along a first direction, thereby forming multiple contact regions separated by multiple vacant regions along the first direction with each of the multiple contact regions including a first row and a second row of the first level contacts extending along a second direction; a first and second plurality of second level contacts formed on top of the first level contacts with the second plurality of second level contacts having elongated shape extending into the vacant regions adjacent thereto; and a first and second plurality of memory elements formed on top of the first and second plurality of second level contacts, respectively, thereby permitting the memory elements to have greater center-to-center distance between two closest neighbors than the first level contacts.

Abstract: A disk drive that includes a noise reduction unit, and a method of reducing noise by using the disk drive. The disk drive includes a main chassis; a tray operatively coupled to the main chassis such that the tray is slidable relative to the main chassis, the tray including a disk accommodation portion configured to accommodate a storage medium such that the storage medium is rotatable relative to the disk accommodation portion; and a noise reduction unit configured to reduce a pressure concentration on an end portion of the storage medium as the storage medium rotates to reduce noise.

Abstract: Disclosed herein are a washing machine with a balancer to counterbalance unbalanced load produced during rotation of a drum and a control method thereof. The washing machine having a balancer to counterbalance unbalanced load produced during rotation of the drum seats a mass in a groove in the balancer before rotation of the drum possibly producing unbalance as in the spin-drying cycle begins, thereby efficiently maintaining balance of the drum. Accordingly, vibration in the drum may be reduced and product liability incident due to touch of the frame may be prevented.

Abstract: Embodiments of the invention are described that use a thin metallic hard mask, which can be a bi-layer film, to increase the incident IBE angle for MTJ sidewall cleaning without losing the process margin for the subsequent interconnection process. The patterned metallic hard mask pads also serve as the top electrode for the MTJ cells. Using a thin metallic hard mask is possible when the hard mask material acts as a CMP stopper without substantial loss of thickness. In the first embodiment, the single layer hard mask is preferably ruthenium. In the second embodiment, the lower layer of the bi-layer hard mask is preferably ruthenium. The wafer is preferably rotated during the IBE process for uniform etching. A capping layer under the hard mask is preferably used as the etch stopper during hard mask etch process in order not to damage or etch through the upper magnetic layer.

Abstract: Resistive memory cell array fabricated with unit areas able to be scaled down to 4 F2, where F is minimum feature size in a technology node are described. Memory cells in a pair of cells commonly include a pair of buried sources in the bottom of trenches formed in a silicon substrate. The source line is shared with an adjacent cell. A pair of gate electrodes provides a vertical channel on a sidewall of the trench. A buried word line connects the bottom of the gates on the sidewall overlying the source wherein the word line is looped at the end of the array. A drain, which is self-aligned to the gate, is formed by implantation/doping the surface of the silicon before patterning the trenches. A contact is formed on top of the drain and the resistive memory element is fabrication on the contact.

Abstract: Embodiments of the invention are described that use a thin metallic hard mask, which can be a bi-layer film, to increase the incident IBE angle for MTJ sidewall cleaning without losing the process margin for the subsequent interconnection process. The patterned metallic hard mask pads also serve as the top electrode for the MTJ cells. Using a thin metallic hard mask is possible when the hard mask material acts as a CMP stopper without substantial loss of thickness. In the first embodiment, the single layer hard mask is preferably ruthenium. In the second embodiment, the lower layer of the bi-layer hard mask is preferably ruthenium. The wafer is preferably rotated during the IBE process for uniform etching. A capping layer under the hard mask is preferably used as the etch stopper during hard mask etch process in order not to damage or etch through the upper magnetic layer.

Abstract: A balancer of a washing machine including a balancer housing mounted to a front surface of a drum and having an annular channel therein, a plurality of masses movably disposed along the channel, at least one magnet coupled to the balancer housing so as to restrict the masses from moving along the channel when a revolution per minute value of the drum is within a specific revolution per minute range, and at least one guide groove which is formed on an inner surface of the balancer housing and guides movement of the plural masses when the drum rotates.

Abstract: The present invention is directed to a method for forming a magnetic tunnel junction (MTJ) memory element comprising the steps of providing a substrate having a bottom electrode layer thereon; depositing an MTJ layer stack on top of the bottom electrode layer; forming a composite hard mask comprising a bottom conducting mask disposed on top of the MTJ layer stack and a top conducting mask with a dielectric mask interposed therebetween; etching the MTJ layer stack with the composite hard mask thereon to form a patterned MTJ while consuming the top conducting mask, thereby exposing the dielectric mask on top; and trimming the patterned MTJ with the bottom conducting mask and the dielectric mask thereon by ion beam etching to remove redeposited material and damaged material from surface of the patterned MTJ while consuming most of the dielectric mask.