Abstract: In one example, an electronic device comprises a substrate comprising a conductive structure and an inner side and an outer side, a first electronic component over the inner side of the substrate and coupled with the conductive structure, a lid over the substrate and the first electronic component and comprising a first hole in the lid, and a thermal interface material between the first electronic component and the lid. The thermal interface material is in the first hole. Other examples and related methods are also disclosed herein.

Abstract: A system and method for laser assisted bonding of semiconductor die. As non-limiting examples, various aspects of this disclosure provide systems and methods that enhance or control laser irradiation of a semiconductor die, for example spatially and/or temporally, to improve bonding of the semiconductor die to a substrate.

Abstract: The present disclosure relates to an apparatus for controlling movement of an ultrasonic wave generating unit, the apparatus characterized by comprising: a transfer unit for moving the ultrasonic wave generating unit; and a control unit for controlling the operation of the ultrasonic wave generating unit and the transfer unit, wherein the control unit controls the ultrasonic wave generating unit such that, when the ultrasonic wave generating unit moves, ultrasonic waves are irradiated at intervals to the skin on a movement path of the ultrasonic wave generating unit.

Abstract: Provided are a substrate treating apparatus and method of manufacturing a phase-change layer having superior deposition characteristics. The substrate treating method of manufacturing a phase-change memory includes forming a bottom electrode on a substrate on which a pattern is formed, performing surface treating for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed, performing nitriding on the surface of the substrate from which the impurities are removed, and successively depositing a phase-change layer and a top electrode on the bottom electrode.

Abstract: Provided is a substrate processing apparatus capable of improving thickness uniformity. The substrate processing apparatus includes a process chamber including a shower head, a feeding block including a tube to provide a source gas and a reaction gas to the shower head, and a mixing block configured to provide a channel connected between the shower head and the feeding block to mix the source gas and the reaction gas, and the mixing block includes an internal space having a cross-sectional area larger than the cross-sectional area of the tube provided in the feeding block, and a collision part provided on a path of a gas mixture of the source gas and the reaction gas to collide with the gas mixture.

Abstract: The present invention relates to a substrate processing apparatus: including a chamber comprising a body having an inner space and a top lid provided on an upper part of the body, the top lid having at least one gas input port; a substrate supporting unit rotatably installed inside the chamber to support a plurality of substrates; and a gas injection device comprising a central injection unit provided on an upper part of the substrate supporting unit to inject a gas into a central region of the substrate supporting unit, a source gas injection unit provided around the central injection unit to inject a source gas into the substrate supporting unit, a reaction gas injection unit provided around the central injection unit to inject a reaction gas into the substrate supporting unit and a purge gas injection unit disposed between the source gas injection unit and the reaction gas injection unit; wherein at least one of the source gas injection unit and the reaction gas injection unit comprises a main injection un

Abstract: The present invention relates to a substrate processing apparatus and a substrate processing method, the substrate processing apparatus including: a load-lock chamber; a transfer chamber disposed on one side of the load-lock chamber; a process chamber disposed on one side of the transfer chamber; and a substrate transfer robot disposed inside the transfer chamber to transfer a substrate between the load-lock chamber and the process chamber, wherein the process chamber includes a plurality of substrate support plates configured to support the substrate, a plurality of gas spray units configured to respectively spray process gases on the plurality of substrate support plates, a turntable configured to transfer the substrate between the plurality of substrate support plates, a first gate through which an unprocessed substrate is taken in, and a second gate through which a processed substrate is taken out; and the substrate transfer robot independently transfers the unprocessed substrate and the processed substra

Abstract: The present invention relates to a substrate processing apparatus: including a chamber comprising a body having an inner space and a top lid provided on an upper part of the body, the top lid having at least one gas input port; a substrate supporting unit rotatably installed inside the chamber to support a plurality of substrates; and a gas injection device comprising a central injection unit provided on an upper part of the substrate supporting unit to inject a gas into a central region of the substrate supporting unit, a source gas injection unit provided around the central injection unit to inject a source gas into the substrate supporting unit, a reaction gas injection unit provided around the central injection unit to inject a reaction gas into the substrate supporting unit and a purge gas injection unit disposed between the source gas injection unit and the reaction gas injection unit; wherein at least one of the source gas injection unit and the reaction gas injection unit comprises a main injection un

Abstract: Provided are a substrate treating apparatus and method of manufacturing a phase-change layer having superior deposition characteristics. The substrate treating method of manufacturing a phase-change memory includes forming a bottom electrode on a substrate on which a pattern is formed, performing surface treating for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed, performing nitriding on the surface of the substrate from which the impurities are removed, and successively depositing a phase-change layer and a top electrode on the bottom electrode.

Abstract: The present invention relates to a semiconductor manufacturing device, which can be applied in a semiconductor metal interconnection process, and a manufacturing method thereof. The semiconductor manufacturing device includes a loadlock chamber, at least one process chamber, a transfer chamber, and an oxidation preventing gas supply unit. The process chamber processes an annealing process by receiving a substrate. The transfer chamber transfers the substrate between the loadlock chamber and the process chamber. The oxidation preventing gas supply unit supplies oxidation preventing gas into either the transfer chamber or the loadlock chamber.

Abstract: Provided are a showerhead assembly for depositing a thin film on a substrate and a thin film deposition apparatus having the same. The showerhead assembly includes a plurality of gas injection units radially disposed above a substrate, each of the plurality of gas injection units comprising a receiving part configured to receive a gas supplied from the outside and a plurality of injection holes configured to inject the gas within the receiving part.