Patents by Inventor Dong Ik Choi

Dong Ik Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polycrystalline diamond compact provided with multiple polycrystalline diamond sintered bodies and method for producing polycrystalline diamond compact
    Patent number: 10131582
    Abstract: The present invention relates to a polycrystalline diamond compact having multiple polycrystalline diamond sintered bodies and a method for producing the polycrystalline diamond compact. The method for producing the polycrystalline diamond includes: preparing first diamond powder; producing a first polycrystalline diamond sintered body having a diameter smaller than the diameter of a cemented substrate by sintering the first diamond powder under 5 to 6 GPa pressure and 1300 to 1500° C. temperature; positioning the first polycrystalline diamond sintered body in the center of the cemented substrate, and granulating second diamond powder around the first polycrystalline diamond sintered body; and sintering the second diamond powder under 5 to 6 GPa pressure and 1300 to 1500° C. temperature to form a second polycrystalline diamond sintered body. The polycrystalline diamond sintered body has uniform sintered characteristics at the center and outer edges thereof.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: November 20, 2018
    Assignee: ILJIN DIAMOND CO.,LTD.
    Inventors: Dong Ik Choi, Hee Sub Park
  • POLYCRYSTALLINE DIAMOND COMPACT PROVIDED WITH MULTIPLE POLYCRYSTALLINE DIAMOND SINTERED BODIES AND METHOD FOR PRODUCING POLYCRYSTALLINE DIAMOND COMPACT
    Publication number: 20160347673
    Abstract: The present invention relates to a polycrystalline diamond compact having multiple polycrystalline diamond sintered bodies and a method for producing the polycrystalline diamond compact. The method for producing the polycrystalline diamond includes: preparing first diamond powder; producing a first polycrystalline diamond sintered body having a diameter smaller than the diameter of a cemented substrate by sintering the first diamond powder under 5 to 6 GPa pressure and 1300 to 1500° C. temperature; positioning the first polycrystalline diamond sintered body in the center of the cemented substrate, and granulating second diamond powder around the first polycrystalline diamond sintered body; and sintering the second diamond powder under 5 to 6 GPa pressure and 1300 to 1500° C. temperature to form a second polycrystalline diamond sintered body. The polycrystalline diamond sintered body has uniform sintered characteristics at the center and outer edges thereof.
    Type: Application
    Filed: February 3, 2015
    Publication date: December 1, 2016
    Applicant: ILJIN DIAMOND CO.,LTD.
    Inventors: Dong Ik Choi, Hee Sub Park