Abstract: A method of preparing a positive electrode active material for a secondary battery includes preparing a lithium composite transition metal oxide which includes nickel, cobalt, and manganese and contains 60 mol % or more of the nickel among all metals except lithium, adding a moisture absorbent and the lithium composite transition metal oxide into an atomic layer deposition (ALD) reactor, and adding a coating metal precursor into the atomic layer deposition (ALD) reactor and forming a metal oxide coating layer on surfaces of particles of the lithium composite transition metal oxide by atomic layer deposition (ALD).

Abstract: A semiconductor device includes an active pattern on a substrate extending in a first horizontal direction, a gate electrode on the active pattern extending in a second horizontal direction, a source/drain region on the active pattern, an upper source/drain region apart from the lower source/drain region, a lower source/drain between upper and lower source/drain regions and connected to the lower source/drain region, an upper source/drain connected to an upper source/drain region, an interlayer insulating layer surrounding the upper source/drain region, a through-via on opposing sidewalls in the second horizontal direction extending through the interlayer insulating layer in the vertical direction, the through-via being spaced from the upper source/drain region and upper source/drain contact in the second horizontal direction, the through-via being connected to the lower source/drain contact, and a dam structure on each of the opposing sidewalls in the horizontal direction of the upper source/drain region.

Abstract: Provided is a bio-adhesive device including an adhesive material layer, an electronic device layer, and a protective film layer to have advantages of being harmless to the human body, being naturally degraded in the body without a separate removal process, and capable of observing the movement of internal organs more closely in real time from outside the body.

Abstract: A semiconductor device is provided. The semiconductor device includes an active pattern extending in a first horizontal direction, a plurality of lower nanosheets stacked on the active pattern and spaced apart from one another in a vertical direction, a separation layer on the plurality of lower nanosheets, a plurality of upper nanosheets stacked on the separation layer and spaced apart from one another in the vertical direction, a gate electrode extending on the active pattern in a second horizontal direction, the gate electrode surrounding each of the plurality of lower nanosheets, the separation layer and the plurality of upper nano sheets, and a first conductive layer between the gate electrode and each of a top surface and a bottom surface of the plurality of upper nanosheets. The first conductive layer is not between the gate electrode and sidewalls of the plurality of upper nanosheets.

Abstract: A small-sized, efficient compressor has a compressed air tank, a first housing provided with a shaft bore, a rotating shaft, an orbiter, a second housing, a rotation restrainer and a circular vane. The orbiter is provided at a lower portion thereof with a cam shaft hole to engage with the cam shaft portion of the rotating shaft without friction, and is adapted to form a ring-shaped operating portion above the orbiter to form a circular space. The second housing is attached to the first housing and forms a second circular space offset from the circular space. The circular vane is formed in the second housing to form a ring-shaped compression chamber within the operating portion of the orbiter. Air is compressed and discharged through a discharge hole of the circular vane to generate a large amount of highly compressed air.