Abstract: A user terminal device and a controlling method thereof are provided. The user terminal device includes a display configured to be divided into a first area and a second area which is larger than the first area with reference to a folding line, a cover disposed on a rear side of the display, a detector configured to detect a user interaction on the display and the cover, and a controller configured to, in response to the display being folded along the folding line such that the first area and the second area face each other, control the detector to detect a user interaction through an exposure area, which is an exposed part of the second area, and the cover, and, in response to the display being folded such that the two parts of the cover face with each other with reference to the folding line, control the detector to detect a user interaction through the first area and the second area.

Abstract: An image processing system may include a first image sensor, a second image sensor, and an image processing device. The image processing device may be configured to obtain a first image and a second image by respectively processing the first image data and the second image data. The image processing device may output an image based on the first image when a zoom factor of the output image is lower than a first reference value, generate a correction image by correcting locations of second reference coordinates of the second image based on first reference coordinates of the first image when the zoom factor of the output image is between the first reference value and the second reference value, and may output an image based on the second image when the zoom factor exceeds the second reference value.

Abstract: A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.

Abstract: Proposed is a solvent extraction method using two-stage extraction for separation and recovery of nickel, cobalt, and manganese. More specifically, the method relates to a two-stage extraction-based solvent extraction method for separately recovering nickel, cobalt, and manganese from a starting material containing nickel, cobalt, and manganese. The method includes a first solvent extraction step in which manganese is recovered from the starting material and a second solvent extraction step in which nickel and cobalt are extracted from the starting material so that three kinds of valuable metals can be separately recovered.

Abstract: A hydrogen storage system is disclosed and includes a storage unit including a plurality of unit storage containers, in which metal hydride materials are respectively provided in an interior thereof and which are connected to each other in parallel, and a thermal fluid line defining a thermal fluid passage, which passes via the plurality of unit storage containers continuously and through which a thermal fluid flows for heating or cooling the unit storage containers, thereby enhancing a storage performance and an efficiency of the hydrogen.

Abstract: A manufacturing method of a semiconductor device may include: forming a stack comprising first material layers and second material layers that are alternately stacked; forming an opening in the stack; forming a first seed layer in the opening; forming a first buffer layer by surface-treating the first seed layer; and forming a blocking layer by oxidizing the first seed layer through the first buffer layer.

Abstract: A semiconductor device includes an on-die resistor circuit comprising an on-die resistor, a calibration circuit configured to perform a calibration operation on the on-die resistor, and a calibration control circuit configured to control the calibration operation of the calibration circuit. The calibration circuit includes a current generating circuit configured to supply a calibration current to the on-die resistor and a comparing circuit configured to compare the magnitude of a first input signal that is generated by the calibration current and the on-die resistor with a magnitude of a second input signal that is generated by the calibration current and an external resistor.

Abstract: A curable composition is provided. The curable composition can eliminate or minimize the generation of bubbles inside the cured product after the initiation reaction of the curable monomer, prevent expansion of a material when used to encapsulate a device, and provide a uniform cured product to solve the problem of separation between the upper and lower substrates bonded together, thereby improving device encapsulation performance.

Abstract: The present disclosure relates to a hydrometallurgical recovery method for nickel sulfate. More specifically, the present disclosure relates to a hydrometallurgical nickel sulfate recovery method in which a wet smelting process is used to extract a high-purity nickel sulfate aqueous solution from a raw material containing nickel (Ni), cobalt (Co), and manganese (Mn). In the method, sodium hydroxide or sodium carbonate is not used as a neutralizer but nickel hydroxide is used, which prevents salts of impurities from being generated as a precipitate in a solvent extraction process, thereby increasing process efficiency of the solvent extraction process.

Abstract: A hydrogen storage device includes a storage container having an accommodation space in an interior thereof, a first metal hydride material provided in the interior of the storage container and that stores hydrogen, and a second metal hydride material provided in the interior of the storage container and that stores the hydrogen at a pressure that is different from that of the first metal hydride material. An advantageous effect of restraining an excessive rise of a pressure of the storage container and enhancing safety and reliability may be obtained.

Abstract: Disclosed is a solvent extraction method for separation and recovery of nickel, cobalt, and manganese. More particularly, the solvent extraction method for recovery of nickel, cobalt, and manganese uses a starting material containing nickel (Ni), cobalt (Co), and manganese (Mn) is used. In the method, manganese (Mn) is recovered through a first solvent extraction step, nickel (Ni) is recovered through a second solvent extraction step, and cobalt (Co) is recovered through a third solvent extraction step. The three kinds of valuable metals are separately separated and recovered.

Abstract: Proposed is a method of selectively leaching lithium (Li) and aluminum (Al) from a mixed carbonate precipitate (MCP) and, more specifically, a method of selectively leaching Li and Al from an MCP, by which a high-purity MCP can be prepared through selective leaching of Li and Al contained in an MCP used as a raw material for recovering valuable metals including nickel (Ni), cobalt (Co), and manganese (Mn).

Abstract: A semiconductor device includes first lower nanosheets; an upper isolation layer on the first lower nanosheets; first upper nanosheets on the upper isolation layer; a first upper source/drain region on the first upper nanosheets; a second upper source/drain region on the first upper nanosheets; a first gate electrode surrounding the first lower nanosheets, the upper isolation layer, and the first upper nanosheets; a first gate cut on a side of the first gate electrode and extending from a lower surface of the first gate electrode to an upper surface of the first gate electrode; a first through via inside the first gate cut and insulated from the first gate electrode; a first upper source/drain contact on and electrically connected to the first upper source/drain region; and a second upper source/drain contact on the first upper source/drain region and electrically connecting the second upper source/drain region with the first through via.

Abstract: An antenna package according to an embodiment of the present disclosure includes a first antenna device including a first antenna unit, a first circuit board electrically connected to the first antenna unit, a second circuit board electrically connected to the first circuit board, a second antenna unit integrated with the second circuit board, and an antenna driving integrated circuit chip mounted on the second circuit board and electrically connected to the first antenna unit and the second antenna unit. Multi-axial radiation is implemented using the antenna package with high efficiency and reliability.

Abstract: The present invention provides a multilayer circuit board and a method for manufacturing the same for improving a bowing problem that occurs when manufacturing the multilayer circuit board. A multilayer circuit board according to the present invention is a board having a patterned layer that functions as a circuit a base layer, and includes: a second pattern layer formed on one side of the base layer; a first pattern layer formed on the second pattern layer; and an interlayer insulating layer formed between the first pattern layer and the second pattern layer, the interlayer insulating layer being partially formed on the second pattern layer so as to correspond to a region where the first pattern layer is formed.

Abstract: A radio frequency (RF) weak magnetic field detection sensor includes a ferromagnetic core, a pickup coil disposed to surround the ferromagnetic core, a substrate that includes an opening, a core pad connected to the ferromagnetic core and a coil pad connected to the pickup coil, and an insulating tube interposed between the ferromagnetic core and the pickup coil. The insulating tube includes a bobbin around which the pickup coil is wound, and a core hole formed to pass through the bobbin and configured to accommodate the ferromagnetic core.

Abstract: The present application provides a method for manufacturing a metal alloy foam. The present application can provide a method for manufacturing a metal alloy foam, which is capable of forming a metal alloy foam comprising uniformly formed pores and having excellent mechanical properties as well as the desired porosity, and a metal alloy foam having the above characteristics. In addition, the present application can provide a method capable of forming a metal alloy foam in which the above-mentioned physical properties are ensured, while being in the form of a thin film or sheet, within a fast process time, and such a metal alloy foam.

Abstract: A semiconductor device includes an on-die resistor circuit comprising an on-die resistor, a calibration circuit configured to perform a calibration operation on the on-die resistor, and a calibration control circuit configured to control the calibration operation of the calibration circuit. The calibration circuit includes a current generating circuit configured to supply a calibration current to the on-die resistor and a comparing circuit configured to compare the magnitude of a first input signal that is generated by the calibration current and the on-die resistor with a magnitude of a second input signal that is generated by the calibration current and an external resistor.

Abstract: The present disclosure relates to an organic electroluminescent compound, a plurality of host materials, and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure or by comprising a specific combination of compounds according to the present disclosure as a plurality of host materials, it is possible to produce an organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.