Abstract: There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.

Abstract: A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array pads arrayed on an outer side of the bonding bumps, and an MEMS device wafer bonded to an upper portion of the cap wafer in a manner to expose the array pads.

Abstract: A chip includes a chip body having an upper surface on which an active surface is formed, and at least one side protrusion terminal protruding from a lateral surface of the chip body and electrically connected to the active surface. As a plurality of semiconductor chips or parts may be connected to one another on a single package, a one-chip or one-package of a package is possible and the thickness of the package can be reduced.

Abstract: Techniques for reducing the frequency split between the Coriolis-coupled modes in disc resonator gyroscopes (DRGs) by perturbing the mass distribution on the disc resonator based on an identified model are disclosed. A model-identification method of tuning a resonator comprises perturbing the mass and measuring a frequency response matrix of the resonator. The frequency response matrix includes a plurality of inputs and a plurality of outputs and the resonator has a plurality of coupled resonance modes. A reduced structural mechanics matrix model of the resonator in sensor and actuator coordinates is identified from the measured frequency response matrix and analyzed to determine generalized eigenvectors of the structural mechanics model and their variations due to selected mass perturbations which is then estimated to improve degeneracy of the plurality of coupled resonance modes based on the generalized eigenvectors of the mass and the stiffness.

Abstract: A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array pads arrayed on an outer side of the bonding bumps, and an MEMS device wafer bonded to an upper portion of the cap wafer in a manner to expose the array pads.

Abstract: Provided is a semiconductor apparatus including a power management integrated circuit. The semiconductor apparatus includes an application processor and a voltage management integrated circuit. The application processor outputs clock information on an operation clock signal, and includes a core circuit. The voltage management integrated circuit receives the clock information from the application processor, and generates and outputs a core voltage having a voltage level corresponding to the clock information in response to the clock information. The operation clock signal is a clock signal, which has a variable frequency and is input to the core circuit of the application processor.

Abstract: A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array bumps arrayed on an outer side of the bonding bumps, and an MEMS device wafer over which a plurality of first outer pads are formed corresponding to the array bumps, wherein the array bumps are bonded to the respective outer pads when the cap wafer and the MEMS device wafer are bonded together.

Abstract: Disclosed is a method for preparing micron-sized ginseng powder via mechanical grinding, the method comprising the steps of: grinding ginseng roots crudely in order to facilitate micro-pulverization of ginseng, grinding the crude ginseng powder finely, and further grinding the ginseng powder ultra-finely. The ginseng micropowder obtained from the method has a maximum particle diameter of 40 ?m or less, an average particle diameter of less that 8 ?m and a uniform particle size, and thus shows excellent dispersibility, miscibility and absorptiveness. Therefore, the micropowder can be used for manufacturing various health-aid foods or medicines such as drinks, tablets or capsules and cosmetic products such as functional skin care agents or skin packs.

Abstract: A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array bumps arrayed on an outer side of the bonding bumps, and an MEMS device wafer over which a plurality of first outer pads are formed corresponding to the array bumps, wherein the array bumps are bonded to the respective outer pads when the cap wafer and the MEMS device wafer are bonded together.

Abstract: A swing hinge module having a simple structure and a movable body that swings, as well as a portable terminal having the same, are disclosed. The swing hinge module is installed between a fixed body and a movable body of the portable terminal to swing the movable body about a rotation shaft to be open from the fixed body. The swing hinge module includes a fixed plate coupled to the fixed body and having a first arc-shaped guide hole formed near the rotation shaft; and an elastic unit having a first end swingably coupled to the movable body and a second end, which is opposite the first end, movably coupled to the first guide hole to provide an elastic force to the movable body.

Abstract: A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based light emitting diode using the same. The method for manufacturing the nitride based single crystal substrate includes forming a ZnO layer on a base substrate; forming a low-temperature nitride buffer layer on the ZnO layer using dimethyl hydragine (DMHy) as an N source; growing a nitride single crystal on the low-temperature nitride buffer layer; and separating the nitride single crystal from the base substrate by chemically eliminating the ZnO layer.

Abstract: There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

Abstract: There is provided a nitride semiconductor light emitting device including: an n-type semiconductor region; an active layer formed on the n-type semiconductor region; a p-type semiconductor region formed on the active layer; an n-electrode disposed in contact with the n-type semiconductor region; a p-electrode formed on the p-type semiconductor region; and at least one intermediate layer formed in at least one of the n-type semiconductor region and the p-type semiconductor region, the intermediate layer disposed above the n-electrode, wherein the intermediate layer is formed of a multi-layer structure where at least three layers with different band gaps from one another are deposited, wherein the multi-layer structure includes one of an AlGaN layer/GaN layer/InGaN layer stack and an InGaN layer/GaN layer/AlGaN layer stack.

Abstract: A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 ?m; and an n-electrode pad formed on the n-type nitride semiconductor layer.

Abstract: Disclosed is a method for preparing micron-sized ginseng powder via mechanical grinding, the method comprising the steps of: grinding ginseng roots crudely in order to facilitate micro-pulverization of ginseng, grinding the crude ginseng powder finely, and further grinding the ginseng powder ultra-finely. The ginseng micropowder obtained from the method has a maximum particle diameter of 40 ?m or less, an average particle diameter of less than 8 ?m and a uniform particle size, and thus shows excellent dispersibility, miscibility and absorptiveness. Therefore, the micropowder can be used for manufacturing various health-aid foods or medicines such as drinks, tablets or capsules and cosmetic products such as functional skin care agents or skin packs.

Abstract: Disclosed herein are an intelligent system and method for monitoring a generator reactive power limit using machine model parameters. The intelligent system and method for monitoring a generator reactive power limit using machine model parameters can calculate a maximum reactive power limit corresponding to over-excitation and a generator terminal voltage corresponding to under-excitation, estimate a correct field current even when system variable are changed, and monitor the generator reactive power limit by using machine model parameters and a one-machine infinite bus, to thereby supply a maximum or minimum reactive power to a power system within an allowable generator reactive power limit and prevent a generator trip caused by the reactive power limit and a power failure over a wide area.

Abstract: A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array bumps arrayed on an outer side of the bonding bumps, and an MEMS device wafer over which a plurality of first outer pads are formed corresponding to the array bumps, wherein the array bumps are bonded to the respective outer pads when the cap wafer and the MEMS device wafer are bonded together.

Abstract: A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array pads arrayed on an outer side of the bonding bumps, and an MEMS device wafer bonded to an upper portion of the cap wafer in a manner to expose the array pads.

Abstract: A flip chip type nitride semiconductor light-emitting diode includes a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a mesh-type dielectric layer formed on the p-type nitride semiconductor layer and having a mesh structure with a plurality of open regions in which the p-type nitride semiconductor layer is exposed; a highly reflective ohmic contact layer formed on the mesh-type dielectric layer and the open regions in which the p-type nitride semiconductor layer is exposed; and a p-bonding electrode and an n-electrode formed on the highly reflective ohmic contact layer and the n-type nitride semiconductor layer, respectively.